Effects of Antimony Deposition on Field-Emission Current Density of Ge/Si

To estimate the field-emission current density of a Ge/Si heterosystem, 20-nm germanium/silicon (100) samples were grown by molecular beam epitaxy. The surface of one sample was covered with a layer of antimony, which was removed in vacuum prior to the samples being measured. A second sample of Ge/Si was exposed to room air in the absence of antimony. The current–voltage characteristics of both samples obtained by scanning tunneling microscopy (STM) were discovered to be in agreement with classical Fowler–Nordheim theory. The density of emission current from Ge nanocrystal exceeds the density of emission current from the wetting layer of Ge/Si. The density of emission current of pure Ge nanocrystal is less than the density of emission current of Ge nanocrystal with adsorption layers.

Field Emission in Silicon Vacuum Nanostructure

Transmission coefficient and field emission current in a silicon vacuum nanostructure with a pyramidal cathode were calculated as a function of applied voltage, size of the cathode and distance between the anode and cathode by the phase function method. The field emission current density in the range of 1–10 A/cm2 was found to be achieved by varying the distance between the anode and cathode in the range of 15–25[Formula: see text]nm and the applied voltage in the range of 1.2–2.3[Formula: see text]V.

Carbon nanotube based 3-dimensional hierarchical field emitter structure

3-dimensional hierarchical structure of carbon nanotubes on CuO nanotubes offering high field emission current density.