optical diode
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Materials ◽  
2021 ◽  
Vol 14 (11) ◽  
pp. 2865
Author(s):  
Bartosz Janaszek ◽  
Marcin Kieliszczyk ◽  
Paweł Szczepański

Hereby, we present an optical isolator (optical diode) based on a hyperbolic metamaterial (HMM). We demonstrate that a grating-free planar linear non-magnetic HMM structure deposited on a high-index substrate, which, due to presence of strong spatial dispersion (non-locality), reveals asymmetrical transmittance and reflectance characteristics for light of arbitrary polarization within a wide angular and spectral range. The presented device may be efficiently utilized to completely block backward and enforce unidirectional propagation in free space and integrated systems without the use of magnetooptical or non-linear effects.


2020 ◽  
Vol 4 (11) ◽  
pp. 115005
Author(s):  
Gabriel Moagăr-Poladian ◽  
Cătălin Tibeică ◽  
Dănuţ-Vasile Ursu
Keyword(s):  

Optik ◽  
2020 ◽  
Vol 221 ◽  
pp. 165344
Author(s):  
Feroz A. Mir ◽  
Peerzada A. Ahmad ◽  
Faheem Ullah ◽  
Mudasar M. Naik ◽  
Baseerat Ghayas
Keyword(s):  

2020 ◽  
Vol 32 (15) ◽  
pp. 952-955 ◽  
Author(s):  
Li Liu ◽  
Mengyuan Ye ◽  
Shasha Liao ◽  
Wei Xue

2020 ◽  
Vol 126 (6) ◽  
Author(s):  
Paulo F. G. Souza ◽  
Eduardo H. S. Viana ◽  
Rosana A. S. Fonseca ◽  
Erms Pereira

2020 ◽  
Vol 12 (3) ◽  
pp. 1-9 ◽  
Author(s):  
Linghuan Xu ◽  
Li Liu ◽  
Miaomiao Chen ◽  
Mengyuan Ye

Nanophotonics ◽  
2020 ◽  
Vol 9 (7) ◽  
pp. 2007-2015 ◽  
Author(s):  
Jie Tang ◽  
Feng Zhang ◽  
Feng Zhou ◽  
Xian Tang ◽  
Xiaoyu Dai ◽  
...  

AbstractGermanium selenide nanoplates (GeSe NPs) are considered to have broadband nonlinear optical (NLO) properties and great potential for applications in nanophotonic devices. In this work, we systematically studied the NLO response of GeSe NPs by the open-aperture Z-scan technique. GeSe NPs exhibit strong saturable absorption at wavelengths of 400, 800, and 1064 nm with different pulse durations. Furthermore, we investigated the excited carrier dynamics of GeSe NPs by the non-degenerate pump-probe technique. The fast and slow relaxation times at different wavelengths of 800, 871, 1064, and 1100 nm were components with lifetimes of about 0.54–1.08 and 52.4–167.2 ps, respectively. The significant ultrafast NLO properties of GeSe NPs imply their potential in the development of nanophotonic devices. Here, we designed and fabricated the all-optical diode by means of the GeSe/C60 tandem structure and demonstrated that the saturable absorption behavior of GeSe NPs can be used to fabricate a photonic diode, which exhibits nonreciprocal transmission of light similar to that of an electron diode.


2020 ◽  
Vol 99 ◽  
pp. 109557 ◽  
Author(s):  
E. Shiju ◽  
Mishra Bharat ◽  
N.K. Siji Narendran ◽  
D. Narayana Rao ◽  
K. Chandrasekharan

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