The generalized uncertainty principle from the doubly special relativity: Algebraic approach, Ramsauer effect and delta potential

In this paper, we consider the DSR-GUP which was first proposed by two of us [W. S. Chung and H. Hassanabadi, Phys. Lett. B 785, 127 (2018)]. Here, we introduce the deformed derivative corresponding to DSR-GUP to discuss the quantum mechanics based on DSR-GUP in an algebraical way. We use the deformed Fourier transform and its inverse transform to discuss the plane wave in [Formula: see text]-space and Gaussian packet. We also extend our discussion to the (1 + 1)-dimensional case. As examples, we discuss the Ramsauer–Townsend effect and delta potential.

Peak-To-Peak Voltage (Vp-p) on Rf Powered-Electrode and Sensitivity of Amorphous Silicon (A-Si) Photoreceptor

ABSTRACTIt has been found that photosensitivity of amorphous silicon (a-Si) photoreceptor fabricated by g1ow-discharge decomposition of SiH4 – B2H6 – Ar has specific relation to peak-to-peak value of Rf (13.5 MHz) voltage (Vp - p) and DC bias voltage (Vdc) on the Rf powered-electrode. The lower the Vp - p value is depressed, the higher the photosensitivity is improved. Dependences of the Vp - p value on deposition parameters such as gas pressure, distance between Rf powered-e1ectrode and aluminum substrate, Rf electric power and dilution ratio of SiH4 to Ar seem to indicate correlation of Vp - p with electron energy and electron density in the plasma.Furthermore, the Vp - p and Vdc values have been measured in plasma of He, Ne (rare-gases with no Ramsauer effect), Ar, Kr, Xe (rare-gases with Ramsauer effect), and H2, N2, CH4, SiH4 (molecular-gases): Specific behaviors in Vp - p and Vdc seem to have correlation with collision cross - sections of electrons (with the energy of 2 ∼ 10 eV) in these gases.