AbstractAgGa5Se8 and Ag(In1-xGax)Se2 thin films with different Ag/Ga atomic ratios have been deposited on the corning 1737 glass substrates by molecular beam epitaxy (MBE) system. This crystallographic property of AgGa5Se8 thin films has been investigated by x-ray diffraction and rietveld analysis. These films had the tetragonal structure with the space group of P-42m, regardless of Ag/Ga atomic ratio. The lattice parameters and the optical band gap energy decreased with an increase in the Ag/Ga atomic ratio. Thus, the structural and optical properties of these AgGa5Se8 thin films were controlled by the Ag/Ga atomic ratio.
Mechanical, Electrical, and Crystallographic Property Dynamics of Bent and Strained Ge/Si Core–Shell Nanowires As Revealed by in situ Transmission Electron Microscopy
