Effect of Neutron Irradiation on SiC Etching in KOH Melt

The effect of reactor neutron irradiation on the SiC crystals etching rate in KOH melt has been investigated. It is shown that at high doses of irradiation (1019 - 1021 neutrons/cm2) the SiC etching rate sharply increases, especially in the [0001] Si direction, leading to essential reduction of orientation anisotropy of polar {0001} faces etching. The increased rate of irradiated crystals etching remains after high-temperature annealing, up to the temperatures of 1400 – 1600 °C. The results are explained by the presence of meta-stable clusters of radiation defects which are the centers of increased chemical activity in the irradiated crystals.