An implanted target (14N on Ta) is prepared and characterized via surface and bulk characterization processes. The depth profile of the implanted ions is obtained experimentally by populating a narrow resonance state of 15O through 14N(ρ,γ) reaction induced with a laboratory proton energy of 278 keV. The experimental profile is then compared with devoted simulations to under- stand the locations of the implantated ions in the lattice structure. Later, the lifetimes of a few excited states of 15O, relevant for applications in astrophys- ical scenario, have been determined using Doppler Shift Attenuation Method(DSAM).