71st Device Research Conference
Latest Publications

TOTAL DOCUMENTS

133

(FIVE YEARS 0)

H-INDEX

6

(FIVE YEARS 0)

Published By IEEE

9781479908110, 9781479908141

Latest Documents Most Cited Documents Contributed Authors Related Sources Related Keywords

Performance enhancement of gate-all-around InGaAs nanowire MOSFETs by raised source and drain structure

71st Device Research Conference ◽

10.1109/drc.2013.6633774 ◽

2013 ◽

Cited By ~ 2

Author(s):

M. Si ◽

X. Lou ◽

X. Li ◽

J. J. Gu ◽

H. Wu ◽

...

Keyword(s):

Performance Enhancement ◽

Nanowire Mosfets

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Tuning the Fermi level position at metal/high-k interfaces

71st Device Research Conference ◽

10.1109/drc.2013.6633874 ◽

2013 ◽

Author(s):

Moshe Eizenberg ◽

Lior Kornblum

Keyword(s):

Fermi Level ◽

Fermi Level Position ◽

High K

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Process and testing innovations

71st Device Research Conference ◽

10.1109/drc.2013.6633873 ◽

2013 ◽

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Plenary session

71st Device Research Conference ◽

10.1109/drc.2013.6633765 ◽

2013 ◽

Keyword(s):

Plenary Session

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3.4 μm diode lasers employing Al-free GaInAsSb/GaSb MQW active regions at 20 °C

71st Device Research Conference ◽

10.1109/drc.2013.6633856 ◽

2013 ◽

Author(s):

Hari P. Nair ◽

Rodolfo Salas ◽

Nathaniel T. Sheehan ◽

Scott J. Maddox ◽

Seth R. Bank

Keyword(s):

Diode Lasers ◽

Active Regions

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High performance Bi2Se3 nanowire field-effect transistors

71st Device Research Conference ◽

10.1109/drc.2013.6633843 ◽

2013 ◽

Author(s):

Hao Zhu ◽

Curt A. Richter ◽

Erhai Zhao ◽

John E. Bonevich ◽

Hyuk-Jae Jang ◽

...

Keyword(s):

Field Effect ◽

High Performance ◽

Field Effect Transistors

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Realistic simulation of graphene transistors including non-ideal electrostatics

71st Device Research Conference ◽

10.1109/drc.2013.6633780 ◽

2013 ◽

Author(s):

Andrey Y. Serov ◽

Sharnali Islam ◽

Eric Pop

Keyword(s):

Realistic Simulation

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Normally-Off GaN-on-Si transistors enabling nanosecond power switching at one kilowatt

71st Device Research Conference ◽

10.1109/drc.2013.6633862 ◽

2013 ◽

Cited By ~ 14

Author(s):

Rongming Chu ◽

Brian Hughes ◽

Mary Chen ◽

David Brown ◽

Ray Li ◽

...

Keyword(s):

Power Switching ◽

Gan On Si

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Gate-first process and EOT-scaling of III-V nanowire-based vertical transistors on Si

71st Device Research Conference ◽

10.1109/drc.2013.6633772 ◽

2013 ◽

Cited By ~ 1

Author(s):

Katsuhiro Tomioka ◽

Takashi Fukui

Keyword(s):

Vertical Transistors

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Steep subthreshold slope nanoelectromechanical field-effect transistors with nanowire channel and back gate geometry

71st Device Research Conference ◽

10.1109/drc.2013.6633867 ◽

2013 ◽

Cited By ~ 2

Author(s):

Ji-Hun Kim ◽

Zack C. Y. Chen ◽

Soonshin Kwon ◽

Jie Xiang

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Subthreshold Slope ◽

Back Gate ◽

Steep Subthreshold Slope

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