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71st Device Research Conference
Latest Publications
TOTAL DOCUMENTS
133
(FIVE YEARS 0)
H-INDEX
6
(FIVE YEARS 0)
Published By IEEE
9781479908110, 9781479908141
Latest Documents
Most Cited Documents
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Latest Documents
Most Cited Documents
Contributed Authors
Related Sources
Related Keywords
Normally-Off GaN-on-Si transistors enabling nanosecond power switching at one kilowatt
71st Device Research Conference
◽
10.1109/drc.2013.6633862
◽
2013
◽
Cited By ~ 14
Author(s):
Rongming Chu
◽
Brian Hughes
◽
Mary Chen
◽
David Brown
◽
Ray Li
◽
...
Keyword(s):
Power Switching
◽
Gan On Si
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Gate-first process and EOT-scaling of III-V nanowire-based vertical transistors on Si
71st Device Research Conference
◽
10.1109/drc.2013.6633772
◽
2013
◽
Cited By ~ 1
Author(s):
Katsuhiro Tomioka
◽
Takashi Fukui
Keyword(s):
Vertical Transistors
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3.4 μm diode lasers employing Al-free GaInAsSb/GaSb MQW active regions at 20 °C
71st Device Research Conference
◽
10.1109/drc.2013.6633856
◽
2013
◽
Author(s):
Hari P. Nair
◽
Rodolfo Salas
◽
Nathaniel T. Sheehan
◽
Scott J. Maddox
◽
Seth R. Bank
Keyword(s):
Diode Lasers
◽
Active Regions
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High performance Bi2Se3 nanowire field-effect transistors
71st Device Research Conference
◽
10.1109/drc.2013.6633843
◽
2013
◽
Author(s):
Hao Zhu
◽
Curt A. Richter
◽
Erhai Zhao
◽
John E. Bonevich
◽
Hyuk-Jae Jang
◽
...
Keyword(s):
Field Effect
◽
High Performance
◽
Field Effect Transistors
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Realistic simulation of graphene transistors including non-ideal electrostatics
71st Device Research Conference
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10.1109/drc.2013.6633780
◽
2013
◽
Author(s):
Andrey Y. Serov
◽
Sharnali Islam
◽
Eric Pop
Keyword(s):
Realistic Simulation
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Performance enhancement of gate-all-around InGaAs nanowire MOSFETs by raised source and drain structure
71st Device Research Conference
◽
10.1109/drc.2013.6633774
◽
2013
◽
Cited By ~ 2
Author(s):
M. Si
◽
X. Lou
◽
X. Li
◽
J. J. Gu
◽
H. Wu
◽
...
Keyword(s):
Performance Enhancement
◽
Nanowire Mosfets
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Tuning the Fermi level position at metal/high-k interfaces
71st Device Research Conference
◽
10.1109/drc.2013.6633874
◽
2013
◽
Author(s):
Moshe Eizenberg
◽
Lior Kornblum
Keyword(s):
Fermi Level
◽
Fermi Level Position
◽
High K
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Process and testing innovations
71st Device Research Conference
◽
10.1109/drc.2013.6633873
◽
2013
◽
Download Full-text
Plenary session
71st Device Research Conference
◽
10.1109/drc.2013.6633765
◽
2013
◽
Keyword(s):
Plenary Session
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Performance impact of post-regrowth channel etching on InGaAs MOSFETs having MOCVD source-drain regrowth
71st Device Research Conference
◽
10.1109/drc.2013.6633776
◽
2013
◽
Cited By ~ 1
Author(s):
Andrew D. Carter
◽
S. Lee
◽
D. C. Elias
◽
C.-Y. Huang
◽
J. J. M. Law
◽
...
Keyword(s):
Performance Impact
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