Proceedings 2002 IEEE Hong Kong Electron Devices Meeting (Cat No 02TH8616) HKEDM-02
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Application of spectral surface plasmon resonance for gas pressure sensing

Proceedings 2002 IEEE Hong Kong Electron Devices Meeting (Cat No 02TH8616) HKEDM-02 ◽

10.1109/hkedm.2002.1029160 ◽

2003 ◽

Cited By ~ 2

Author(s):

H.P. Ho ◽

C.L. Wong

Keyword(s):

Surface Plasmon Resonance ◽

Surface Plasmon ◽

Plasmon Resonance ◽

Gas Pressure ◽

Pressure Sensing

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Sensitivity improvement of the surface plasmon resonance optical sensor by using a gold-silver transducing layer

Proceedings 2002 IEEE Hong Kong Electron Devices Meeting (Cat No 02TH8616) HKEDM-02 ◽

10.1109/hkedm.2002.1029158 ◽

2003 ◽

Cited By ~ 8

Author(s):

S.Y. Wu ◽

H.P. Ho

Keyword(s):

Surface Plasmon Resonance ◽

Surface Plasmon ◽

Plasmon Resonance ◽

Optical Sensor ◽

Gold Silver ◽

Sensitivity Improvement

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Raman spectroscopy study on free-standing GaN separated from sapphire substrates by 532 nm Nd:YAG laser lift-off

Proceedings 2002 IEEE Hong Kong Electron Devices Meeting (Cat No 02TH8616) HKEDM-02 ◽

10.1109/hkedm.2002.1029169 ◽

2003 ◽

Author(s):

H.P. Ho ◽

K.C. Lo ◽

G.G. Siu ◽

C. Surya

Keyword(s):

Raman Spectroscopy ◽

Nd:Yag Laser ◽

Spectroscopy Study ◽

Free Standing ◽

Sapphire Substrates ◽

Lift Off ◽

532 Nm

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Application of shape memory alloy as detector material for far-infrared imaging transducers

Proceedings 2002 IEEE Hong Kong Electron Devices Meeting (Cat No 02TH8616) HKEDM-02 ◽

10.1109/hkedm.2002.1029157 ◽

2003 ◽

Cited By ~ 1

Author(s):

H.P. Ho ◽

C.Y. Chung ◽

K.C. Ng ◽

K.L. Cheng ◽

S.Y. Wu

Keyword(s):

Shape Memory Alloy ◽

Shape Memory ◽

Infrared Imaging ◽

Far Infrared ◽

Detector Material

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A study on theoretical representation of intermodulation in CMOS balanced mixers

Proceedings 2002 IEEE Hong Kong Electron Devices Meeting (Cat No 02TH8616) HKEDM-02 ◽

10.1109/hkedm.2002.1029168 ◽

2003 ◽

Author(s):

Jun Wang ◽

A.K.K. Wong

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High-current injection in Spreading-Resistance Temperature sensor on SOI

Proceedings 2002 IEEE Hong Kong Electron Devices Meeting (Cat No 02TH8616) HKEDM-02 ◽

10.1109/hkedm.2002.1029159 ◽

2003 ◽

Cited By ~ 1

Author(s):

Z.H. Wu ◽

P.T. Lai ◽

Bin Li ◽

J.K.O. Sin

Keyword(s):

Temperature Sensor ◽

Current Injection ◽

High Current ◽

Spreading Resistance

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The gate misalignment effects of the sub-threshold characteristics of sub-100 nm DG-MOSFETs

Proceedings 2002 IEEE Hong Kong Electron Devices Meeting (Cat No 02TH8616) HKEDM-02 ◽

10.1109/hkedm.2002.1029164 ◽

2003 ◽

Cited By ~ 5

Author(s):

Hiu Yung Wong ◽

Kyoungsub Shin ◽

Mansun Chan

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Numerical study of one-fold coordinated oxygen atom in silicon gate oxide

Proceedings 2002 IEEE Hong Kong Electron Devices Meeting (Cat No 02TH8616) HKEDM-02 ◽

10.1109/hkedm.2002.1029152 ◽

2003 ◽

Author(s):

V.A. Gritsenko ◽

A. Shaposhnikov ◽

Yu.N. Novikov ◽

A.P. Baraban ◽

Hei Wong ◽

...

Keyword(s):

Oxygen Atom ◽

Numerical Study ◽

Gate Oxide

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Synthesis and characterization of SrTiO/sub 3/ thin films by a modified metalorganic decomposition technique

Proceedings 2002 IEEE Hong Kong Electron Devices Meeting (Cat No 02TH8616) HKEDM-02 ◽

10.1109/hkedm.2002.1029147 ◽

2003 ◽

Cited By ~ 1

Author(s):

T.B. Ng ◽

J.B. Xu ◽

G.D. Hu ◽

W.Y. Cheung ◽

N. Ke ◽

...

Keyword(s):

Thin Films ◽

Synthesis And Characterization ◽

Decomposition Technique ◽

Metalorganic Decomposition

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Feasibility of 50-nm device manufacture by 157-nm optical lithography: an initial assessment

Proceedings 2002 IEEE Hong Kong Electron Devices Meeting (Cat No 02TH8616) HKEDM-02 ◽

10.1109/hkedm.2002.1029150 ◽

2003 ◽

Author(s):

Pong Wing Tai ◽

A. Wong

Keyword(s):

Optical Lithography ◽

Initial Assessment

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Proceedings 2002 IEEE Hong Kong Electron Devices Meeting (Cat No 02TH8616) HKEDM-02Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Application of spectral surface plasmon resonance for gas pressure sensing

Sensitivity improvement of the surface plasmon resonance optical sensor by using a gold-silver transducing layer

Raman spectroscopy study on free-standing GaN separated from sapphire substrates by 532 nm Nd:YAG laser lift-off

Application of shape memory alloy as detector material for far-infrared imaging transducers

A study on theoretical representation of intermodulation in CMOS balanced mixers

High-current injection in Spreading-Resistance Temperature sensor on SOI

The gate misalignment effects of the sub-threshold characteristics of sub-100 nm DG-MOSFETs

Numerical study of one-fold coordinated oxygen atom in silicon gate oxide

Synthesis and characterization of SrTiO/sub 3/ thin films by a modified metalorganic decomposition technique

Feasibility of 50-nm device manufacture by 157-nm optical lithography: an initial assessment

Proceedings 2002 IEEE Hong Kong Electron Devices Meeting (Cat No 02TH8616) HKEDM-02
Latest Publications