1998 International Conference on Ion Implantation Technology. Proceedings (Cat. No.98EX144)
Latest Publications

TOTAL DOCUMENTS

319

(FIVE YEARS 0)

H-INDEX

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Published By IEEE

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Latest Documents Most Cited Documents Contributed Authors Related Sources Related Keywords

Investigation of uniformity degradation by intentionally induced fast beam glitch with a disk-slot batch type endstation

1998 International Conference on Ion Implantation Technology. Proceedings (Cat. No.98EX144) ◽

10.1109/iit.1999.812190 ◽

2003 ◽

Author(s):

R. Grezeszak ◽

N. Tokoro ◽

C. Bowen ◽

S. Richards ◽

K. Yashima

Keyword(s):

Batch Type

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Characterisation of extended life ion source in Eaton's NV-8250 medium current ion implanter

1998 International Conference on Ion Implantation Technology. Proceedings (Cat. No.98EX144) ◽

10.1109/iit.1999.812092 ◽

2003 ◽

Author(s):

G. Curello ◽

T. McWilliams ◽

M. Watson ◽

A.M. Arrale ◽

M. Anjum

Keyword(s):

Ion Source ◽

Extended Life

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Ultra-shallow junctions and the effect of ramp-up rate during spike anneals in lamp-based and hot-walled RTP systems

1998 International Conference on Ion Implantation Technology. Proceedings (Cat. No.98EX144) ◽

10.1109/iit.1999.812042 ◽

2003 ◽

Author(s):

A. Agarwal ◽

A.T. Fiory ◽

H.-J. Gossmann ◽

C. Rafferty ◽

P. Frisella ◽

...

Keyword(s):

Shallow Junctions ◽

Ultra Shallow Junctions

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The ULE2 ion source capabilities important to SOI technology

1998 International Conference on Ion Implantation Technology. Proceedings (Cat. No.98EX144) ◽

10.1109/iit.1999.812114 ◽

2003 ◽

Author(s):

M.A. Graf ◽

W. Krull ◽

V. Benveniste

Keyword(s):

Ion Source ◽

Soi Technology

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Production of multiply charged ions by utilizing pulsed ECR plasma

1998 International Conference on Ion Implantation Technology. Proceedings (Cat. No.98EX144) ◽

10.1109/iit.1999.812150 ◽

2003 ◽

Author(s):

Y. Kato ◽

S. Ishii

Keyword(s):

Multiply Charged Ions ◽

Ecr Plasma ◽

Multiply Charged ◽

Charged Ions

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Characterization of hazardous gases released during ion implant processes

1998 International Conference on Ion Implantation Technology. Proceedings (Cat. No.98EX144) ◽

10.1109/iit.1999.812098 ◽

2003 ◽

Cited By ~ 2

Author(s):

J. Arno ◽

W. Boyd ◽

M.J. Rendon ◽

T. Romig

Keyword(s):

Hazardous Gases

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Automatic generation of pressure compensation factors

1998 International Conference on Ion Implantation Technology. Proceedings (Cat. No.98EX144) ◽

10.1109/iit.1999.812178 ◽

2003 ◽

Cited By ~ 5

Author(s):

H. Kariya ◽

M. Sano ◽

M. Tsukihara ◽

M. Sugitani

Keyword(s):

Automatic Generation ◽

Pressure Compensation

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Rejection of P/sup +/ contamination in P/sup ++/ implants on the Eaton 8250

1998 International Conference on Ion Implantation Technology. Proceedings (Cat. No.98EX144) ◽

10.1109/iit.1999.812193 ◽

2003 ◽

Cited By ~ 3

Author(s):

R.D. Rathmell ◽

M.L. King ◽

D.E. Kamenitsa ◽

M.A. Rathmell

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A pulsed ion source by non metal shunting arc discharge

1998 International Conference on Ion Implantation Technology. Proceedings (Cat. No.98EX144) ◽

10.1109/iit.1999.812133 ◽

2003 ◽

Author(s):

K. Yukimura ◽

S. Masamune ◽

R. Isono ◽

T. Monguchi ◽

K. Yashioka

Keyword(s):

Arc Discharge ◽

Ion Source

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Electrical behaviour associated with defect tails in germanium implanted silicon

1998 International Conference on Ion Implantation Technology. Proceedings (Cat. No.98EX144) ◽

10.1109/iit.1999.812163 ◽

2003 ◽

Author(s):

A. Nejim ◽

R.M. Gwilliam ◽

N.G. Emerson ◽

A.P. Knights ◽

F. Cristiano ◽

...

Keyword(s):

Electrical Behaviour

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1998 International Conference on Ion Implantation Technology. Proceedings (Cat. No.98EX144)Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Investigation of uniformity degradation by intentionally induced fast beam glitch with a disk-slot batch type endstation

Characterisation of extended life ion source in Eaton's NV-8250 medium current ion implanter

Ultra-shallow junctions and the effect of ramp-up rate during spike anneals in lamp-based and hot-walled RTP systems

The ULE2 ion source capabilities important to SOI technology

Production of multiply charged ions by utilizing pulsed ECR plasma

Characterization of hazardous gases released during ion implant processes

Automatic generation of pressure compensation factors

Rejection of P/sup +/ contamination in P/sup ++/ implants on the Eaton 8250

A pulsed ion source by non metal shunting arc discharge

Electrical behaviour associated with defect tails in germanium implanted silicon

1998 International Conference on Ion Implantation Technology. Proceedings (Cat. No.98EX144)
Latest Publications