1998 International Conference on Ion Implantation Technology. Proceedings (Cat. No.98EX144)
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Characterisation of extended life ion source in Eaton's NV-8250 medium current ion implanter

1998 International Conference on Ion Implantation Technology. Proceedings (Cat. No.98EX144) ◽

10.1109/iit.1999.812092 ◽

2003 ◽

Author(s):

G. Curello ◽

T. McWilliams ◽

M. Watson ◽

A.M. Arrale ◽

M. Anjum

Keyword(s):

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Ultra-shallow junctions and the effect of ramp-up rate during spike anneals in lamp-based and hot-walled RTP systems

1998 International Conference on Ion Implantation Technology. Proceedings (Cat. No.98EX144) ◽

10.1109/iit.1999.812042 ◽

2003 ◽

Author(s):

A. Agarwal ◽

A.T. Fiory ◽

H.-J. Gossmann ◽

C. Rafferty ◽

P. Frisella ◽

...

Keyword(s):

Shallow Junctions ◽

Ultra Shallow Junctions

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The ULE2 ion source capabilities important to SOI technology

1998 International Conference on Ion Implantation Technology. Proceedings (Cat. No.98EX144) ◽

10.1109/iit.1999.812114 ◽

2003 ◽

Author(s):

M.A. Graf ◽

W. Krull ◽

V. Benveniste

Keyword(s):

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Production of multiply charged ions by utilizing pulsed ECR plasma

1998 International Conference on Ion Implantation Technology. Proceedings (Cat. No.98EX144) ◽

10.1109/iit.1999.812150 ◽

2003 ◽

Author(s):

Y. Kato ◽

S. Ishii

Keyword(s):

Multiply Charged Ions ◽

Multiply Charged ◽

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Investigation of uniformity degradation by intentionally induced fast beam glitch with a disk-slot batch type endstation

1998 International Conference on Ion Implantation Technology. Proceedings (Cat. No.98EX144) ◽

10.1109/iit.1999.812190 ◽

2003 ◽

Author(s):

R. Grezeszak ◽

N. Tokoro ◽

C. Bowen ◽

S. Richards ◽

K. Yashima

Keyword(s):

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A pulsed ion source by non metal shunting arc discharge

1998 International Conference on Ion Implantation Technology. Proceedings (Cat. No.98EX144) ◽

10.1109/iit.1999.812133 ◽

2003 ◽

Author(s):

K. Yukimura ◽

S. Masamune ◽

R. Isono ◽

T. Monguchi ◽

K. Yashioka

Keyword(s):

Arc Discharge ◽

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Electrical behaviour associated with defect tails in germanium implanted silicon

1998 International Conference on Ion Implantation Technology. Proceedings (Cat. No.98EX144) ◽

10.1109/iit.1999.812163 ◽

2003 ◽

Author(s):

A. Nejim ◽

R.M. Gwilliam ◽

N.G. Emerson ◽

A.P. Knights ◽

F. Cristiano ◽

...

Keyword(s):

Electrical Behaviour

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High quality shallow p/sup +/-n junction formation by employing BF/sub 2//low energy /sup 11/B mixed ion implant process

1998 International Conference on Ion Implantation Technology. Proceedings (Cat. No.98EX144) ◽

10.1109/iit.1999.812057 ◽

2003 ◽

Author(s):

Dong-Ho Lee ◽

Yong-Sun Sohn ◽

Kvung-youl Min ◽

Seung-Woo Jin ◽

Shin-Kook Lee ◽

...

Keyword(s):

High Quality ◽

Junction Formation

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Monitoring system of reliability and repeatability of pressure compensation

1998 International Conference on Ion Implantation Technology. Proceedings (Cat. No.98EX144) ◽

10.1109/iit.1999.812118 ◽

2003 ◽

Author(s):

M. Sano ◽

M. Kabasawa ◽

H. Kariya ◽

M. Sugitani

Keyword(s):

Monitoring System ◽

Pressure Compensation

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Characterizing electron shower with CHARM(R)-2 wafers on Eaten NV-8200P medium current ion implanter

1998 International Conference on Ion Implantation Technology. Proceedings (Cat. No.98EX144) ◽

10.1109/iit.1999.812197 ◽

2003 ◽

Author(s):

S. Reno ◽

H. Gonzalez ◽

C. Messick ◽

W. Lukaszek ◽

D.A. St. Angelo ◽

...

Keyword(s):

Electron Shower

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