IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004.
Latest Publications

TOTAL DOCUMENTS

354

(FIVE YEARS 0)

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(FIVE YEARS 0)

Published By IEEE

0780386841

Latest Documents Most Cited Documents Contributed Authors Related Sources Related Keywords

Simulation study of Ge n-channel 7.5 nm DGFETs of arbitrary crystallographic alignment

IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004. ◽

10.1109/iedm.2004.1419088 ◽

2005 ◽

Cited By ~ 19

Author(s):

S.E. Laux

Keyword(s):

Simulation Study

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Ultra-fast measurements of the inversion charge in MOSFETs and impact on measured mobility in high-k MOSFETs

IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004. ◽

10.1109/iedm.2004.1419315 ◽

2005 ◽

Cited By ~ 5

Author(s):

D.V. Singh ◽

P. Solomon ◽

E.P. Gusev ◽

G. Singeo ◽

Z. Ren

Keyword(s):

High K ◽

Inversion Charge

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Experimental extraction of the electron impact-ionization coefficient at large operating temperatures

IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004. ◽

10.1109/iedm.2004.1419171 ◽

2005 ◽

Cited By ~ 7

Author(s):

S. Reggiani ◽

E. Gnani ◽

M. Rudan ◽

G. Baccarani ◽

C. Corvasce ◽

...

Keyword(s):

Electron Impact ◽

Impact Ionization ◽

Electron Impact Ionization ◽

Ionization Coefficient ◽

Operating Temperatures

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Experimental and simulation study of boron segregation and diffusion during gate oxidation and spike annealing

IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004. ◽

10.1109/iedm.2004.1419351 ◽

2005 ◽

Cited By ~ 10

Author(s):

A. Benvenuti A. Ghetti

Keyword(s):

Simulation Study ◽

Boron Segregation ◽

Spike Annealing ◽

And Diffusion

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An organic semiconductor based process for photodetecting applications

IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004. ◽

10.1109/iedm.2004.1419162 ◽

2005 ◽

Cited By ~ 3

Author(s):

I. Kymissis ◽

C.G. Sodini ◽

A.I. Akinwande ◽

V. Bulovic

Keyword(s):

Organic Semiconductor

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Carbon nanotube electronics and optoelectronics

IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004. ◽

10.1109/iedm.2004.1419208 ◽

2005 ◽

Cited By ~ 14

Author(s):

Ph. Avouris ◽

A. Afzali ◽

J. Appenzeller ◽

J. Chen ◽

M. Freitag ◽

...

Keyword(s):

Carbon Nanotube

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Integration of high-performance SiGe:C HBTs with thin-film SOI CMOS

IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004. ◽

10.1109/iedm.2004.1419120 ◽

2005 ◽

Cited By ~ 6

Author(s):

H. Rucker ◽

B. Hemernann ◽

R. Barth ◽

D. Bolze ◽

J. Drews ◽

...

Keyword(s):

Thin Film ◽

High Performance ◽

Soi Cmos

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Transient behavior of phosphorus dose loss and modeling of dopant segregation at the Si/SiO/sub 2/ interface

IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004. ◽

10.1109/iedm.2004.1419350 ◽

2005 ◽

Cited By ~ 1

Author(s):

L.W. Ho J. R. Tsai

Keyword(s):

Transient Behavior ◽

Dopant Segregation

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Membrane high voltage devices - a milestone concept in power ICs

IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004. ◽

10.1109/iedm.2004.1419185 ◽

2005 ◽

Cited By ~ 16

Author(s):

F. Udrea ◽

T. Trajkovic ◽

G.A.J. Arnaratunga

Keyword(s):

High Voltage

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Highly scalable non-volatile resistive memory using simple binary oxide driven by asymmetric unipolar voltage pulses

IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004. ◽

10.1109/iedm.2004.1419228 ◽

2005 ◽

Cited By ~ 253

Author(s):

I.G. Baek ◽

M.S. Lee ◽

S. Sco ◽

M.J. Lee ◽

D.H. Seo ◽

...

Keyword(s):

Binary Oxide ◽

Resistive Memory ◽

Voltage Pulses

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IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004.Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Simulation study of Ge n-channel 7.5 nm DGFETs of arbitrary crystallographic alignment

Ultra-fast measurements of the inversion charge in MOSFETs and impact on measured mobility in high-k MOSFETs

Experimental extraction of the electron impact-ionization coefficient at large operating temperatures

Experimental and simulation study of boron segregation and diffusion during gate oxidation and spike annealing

An organic semiconductor based process for photodetecting applications

Carbon nanotube electronics and optoelectronics

Integration of high-performance SiGe:C HBTs with thin-film SOI CMOS

Transient behavior of phosphorus dose loss and modeling of dopant segregation at the Si/SiO/sub 2/ interface

Membrane high voltage devices - a milestone concept in power ICs

Highly scalable non-volatile resistive memory using simple binary oxide driven by asymmetric unipolar voltage pulses

IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004.
Latest Publications