IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004.
Latest Publications

TOTAL DOCUMENTS

354

(FIVE YEARS 0)

H-INDEX

24

(FIVE YEARS 0)

Published By IEEE

0780386841

Latest Documents Most Cited Documents Contributed Authors Related Sources Related Keywords

Low-voltage flexible organic circuits with molecular gate dielectrics

IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004. ◽

10.1109/iedm.2004.1419160 ◽

2005 ◽

Author(s):

H. Klauk ◽

M. Halik ◽

F. Eder ◽

G. Schmid ◽

C. Dehm ◽

...

Keyword(s):

Low Voltage ◽

Gate Dielectrics

Download Full-text

Power optimization of future transistors and a resulting global comparison standard

IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004. ◽

10.1109/iedm.2004.1419173 ◽

2005 ◽

Author(s):

P. Kapur ◽

R.S. Shenoy ◽

A.K. Chao ◽

Y. Nishi ◽

K.C. Saraswat

Keyword(s):

Power Optimization ◽

Comparison Standard ◽

Global Comparison

Download Full-text

Membrane high voltage devices - a milestone concept in power ICs

IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004. ◽

10.1109/iedm.2004.1419185 ◽

2005 ◽

Author(s):

F. Udrea ◽

T. Trajkovic ◽

G.A.J. Arnaratunga

Keyword(s):

Download Full-text

Highly scalable non-volatile resistive memory using simple binary oxide driven by asymmetric unipolar voltage pulses

IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004. ◽

10.1109/iedm.2004.1419228 ◽

2005 ◽

Author(s):

I.G. Baek ◽

M.S. Lee ◽

S. Sco ◽

M.J. Lee ◽

D.H. Seo ◽

...

Keyword(s):

Binary Oxide ◽

Resistive Memory ◽

Download Full-text

Spintronic materials and devices: past, present and future!

IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004. ◽

10.1109/iedm.2004.1419328 ◽

2005 ◽

Author(s):

S.S.P. Parkin

Download Full-text

A comprehensive trapped charge profiling technique for SONOS flash EEPROMs

IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004. ◽

10.1109/iedm.2004.1419170 ◽

2005 ◽

Author(s):

P.R. Nair ◽

P.B. Kumar ◽

R. Sharma ◽

S. Kamohara ◽

S. Mahapatra

Keyword(s):

Download Full-text

Crosstalk improvement technology applicable to 0.14um CMOS image sensor

IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004. ◽

10.1109/iedm.2004.1419356 ◽

2005 ◽

Author(s):

Shou-Gwo Wuu Chien-Hsien Tseng

Keyword(s):

Cmos Image Sensor ◽

Download Full-text

High-K HfAlO charge trapping layer in SONOS-type nonvolatile memory device for high speed operation

IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004. ◽

10.1109/iedm.2004.1419323 ◽

2005 ◽

Author(s):

Yan Ny Tan ◽

Wai Kin Chim ◽

Wee Kiong Choi ◽

Moon Sig Joe ◽

Tsu Hau Ng ◽

...

Keyword(s):

Nonvolatile Memory ◽

Charge Trapping ◽

Memory Device ◽

High K ◽

Nonvolatile Memory Device

Download Full-text

Simulation study of Ge n-channel 7.5 nm DGFETs of arbitrary crystallographic alignment

IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004. ◽

10.1109/iedm.2004.1419088 ◽

2005 ◽

Author(s):

S.E. Laux

Keyword(s):

Simulation Study

Download Full-text

Ultra-fast measurements of the inversion charge in MOSFETs and impact on measured mobility in high-k MOSFETs

IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004. ◽

10.1109/iedm.2004.1419315 ◽

2005 ◽

Author(s):

D.V. Singh ◽

P. Solomon ◽

E.P. Gusev ◽

G. Singeo ◽

Z. Ren

Keyword(s):

High K ◽

Inversion Charge

Download Full-text