Influence of Different Device Structures on the Degradation for Trench-Gate SiC MOSFETs: Taking Avalanche Stress as an Example

The variations in the degradation of electrical characteristics resulting from different device structures for trench-gate SiC metal-oxide-semiconductor field effect transistors (MOSFETs) are investigated in this work. Two types of the most advanced commercial trench products, which are the asymmetric trench SiC MOSFET and the double-trench SiC MOSFET, are chosen as the targeted devices. The discrepant degradation trends caused by the repetitive avalanche stress are monitored. For the double-trench device, the conduction characteristic improves while the gate-drain capacitance (Cgd) increases seriously. It is because positive charges are injected into the bottom gate oxide during the avalanche process, which are driven by the high oxide electronic field (Eox) and the high impact ionization rate (I.I.) there. Meanwhile, for the asymmetric trench SiC MOSFET, the I–V curve under the high gate bias condition and the Cgd remain relatively stable, while the trench bottom is well protected by the deep P+ well. However, it’s threshold voltage (Vth) decreases more obviously when compared with that of the double-trench device and the inclined channel suffers from more serious stress than the vertical channel. Positive charges are more easily injected into the inclined channel. The phenomena and the corresponding mechanisms are analyzed and proved by experiments and technology computer-aided design (TCAD) simulations.

Charge-Exchange Byproduct Cold Protons in the Earth’s Magnetosphere

Owing to the spatial overlap of the ion plasma sheet (ring current) with the Earth’s neutral-hydrogen geocorona, there is a significant rate of occurrence of charge-exchange collisions in the dipolar portion of the Earth’s magnetosphere. During a charge-exchange collision between an energetic proton and a low-energy hydrogen atom, a low-energy proton is produced. These “byproduct” cold protons are trapped in the Earth’s magnetic field where they advect via E×B drift. In this report, the number density and behavior of this cold-proton population are assessed. Estimates of the rate of production of byproduct cold protons from charge exchange are in the vicinity of 1.14 cm−3 per day at geosynchronous orbit or about 5 tons per day for the entire dipolar magnetosphere. The production rate of cold protons owing to electron-impact ionization of the geocorona by the electron plasma sheet at geosynchronous orbit is about 12% of the charge-exchange production rate, but the production rate by solar photoionization of the neutral geocorona is comparable or larger than the charge-exchange production rate. The byproduct-ion production rates are smaller than observed early time refilling rates for the outer plasmasphere. Numerical simulations of the production and transport of cold charge-exchange byproduct protons find that they have very low densities on the nightside of geosynchronous orbit, and they can have densities of 0.2–0.3 cm−3 at geosynchronous orbit on the dayside. These dayside byproduct-proton densities might play a role in shortening the early phase of plasmaspheric refilling.

Design of Low Power Less Leakage Quarternary Adder Using CMOS

In VLSI, design and implementation of circuits with MOS devices and binary logic are quite usual. The Main Objective is to design a low power and minimum leakage Quaternary adder. The VLSI field consists of Multi-valued logic (MVL) such as ternary and Quaternary Logic (QTL). The Failures such as Short Channel Effects (SCE) Impact-ionization and surface scattering are in normalized aspects. The Quaternary radix on MVL (multi-valued logic) monitors and reduces the area. The Quaternary (four-valued) logic converts the quaternary signals and binary signals produced by the by the existing binary circuits. The Proposed is carried out with LTSPICE tool and CMOS technology.

Electron Impact Ionization of Metastable States of Diatomic Molecules

The Binary-Encounter Bethe approach was applied to the estimation of total ionization induced by electron impact in metastable states of diatomic molecules. The cross sections recently obtained for N2 and CO are reviewed and the new results for H2 are presented, discussing their reliability through the comparison with other theoretical methods.

Studies on impurity seeding and transport in edge and SOL of tokamak plasma

We present numerical simulation studies on impurity seeding using Nitrogen, Neon, and Argon gases. These impurity gases are ionized by the electron impact ionization. These ions can be at multiply ionized states, recombine again with the plasma electrons, and radiate energy. The radiation losses are estimated using a non-coronal equilibrium model. A set of 2D model equations to describe their self-consistent evolution are derived using interchange plasma turbulence in the edge and SOL regions and solved using BOUT++. It is found that impurity ions (with single or double-positive charges) move in the inward direction with a velocity ∼ 0.02cs so that these fluxes are negative. These fluxes are analyzed for different strengths of an effective gravity that help to understand the impurity ion dynamics. Increased gravity shows an accumulation of certain charged species in the edge region. The radiation loss is seen to have a fluctuation in time with frequency 5-20 kHz that closely follows the behavior of the interchange plasma turbulence. The simulation results on the radiated power and its frequency spectrum compare favourably with observations on the Aditya-U tokamak. The negative fluxes of the impurity ions, their dynamics in the edge region, and the fluctuating nature of the radiation loss are the most important results of this work.