2019 IEEE 19th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)

Modeling distributed dynamic lateral large-signal switching effects in bipolar transistors

2019 IEEE 19th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) ◽

10.1109/sirf.2019.8709136 ◽

2019 ◽

Author(s):

M. Schroter ◽

M. Krattenmacher

Keyword(s):

Bipolar Transistors ◽

Large Signal ◽

Signal Switching

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Highly-Integrated <0.14mm2D -Band Receiver Front-Ends for Radar and Imaging Applications in a 130 nm SiGe BiCMOS Technology

2019 IEEE 19th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) ◽

10.1109/sirf.2019.8709129 ◽

2019 ◽

Cited By ~ 1

Author(s):

Erick Aguilar ◽

Vadim Issakov ◽

Robert Weigel

Keyword(s):

Bicmos Technology ◽

Sige Bicmos

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Finite-element modelling of stress induced wafer warpage for a full BiCMOS process

2019 IEEE 19th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) ◽

10.1109/sirf.2019.8709125 ◽

2019 ◽

Author(s):

Zhibo Cao ◽

Alexander Goritz ◽

Matthias Wietstruck ◽

Selin Tolunay Wipf ◽

Andreas Trusch ◽

...

Keyword(s):

Finite Element ◽

Finite Element Modelling ◽

Element Modelling ◽

Bicmos Process

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W-band low-power millimeter-wave low noise amplifiers (LNAs)using SiGe HBTs in saturation region

2019 IEEE 19th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) ◽

10.1109/sirf.2019.8709134 ◽

2019 ◽

Cited By ~ 4

Author(s):

A. Mukherjee ◽

W. Liang ◽

P. Sakalas ◽

A. Pawlak ◽

M. Schroter

Keyword(s):

Low Power ◽

Millimeter Wave ◽

Low Noise ◽

Low Noise Amplifiers ◽

W Band ◽

Saturation Region

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A W-Band SiGe Transceiver with Built-in Self-Test

2019 IEEE 19th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) ◽

10.1109/sirf.2019.8709094 ◽

2019 ◽

Cited By ~ 1

Author(s):

S. Zeinolabedinzadeh ◽

A. C. Ulusoy ◽

R. L. Schmid ◽

F. Inanlou ◽

I. Song ◽

...

Keyword(s):

W Band ◽

Self Test ◽

Built In Self Test

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A 0.1-5.7 GHz CMOS Phase Shifter with 0.27dB/1.8° RMS Magnitude /Phase Errors and Enhanced Linearity

2019 IEEE 19th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) ◽

10.1109/sirf.2019.8709089 ◽

2019 ◽

Cited By ~ 2

Author(s):

Jingjing Xia ◽

Yiling Xu ◽

Hai Huang ◽

Slim Boumaiza

Keyword(s):

Phase Shifter ◽

Phase Errors

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A Compact 24-32 GHz Linear Upconverting Mixer with -1.5 dBm OP1dB using 0.13-μ SiGe BiCMOS Process

2019 IEEE 19th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) ◽

10.1109/sirf.2019.8709097 ◽

2019 ◽

Cited By ~ 1

Author(s):

Jubaid Abdul Qayyum ◽

John Albrecht ◽

Ahmet Cagri Ulusoy

Keyword(s):

Sige Bicmos ◽

Bicmos Process

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Compact Modeling of Series Stacked Tapered Spiral Inductors

2019 IEEE 19th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) ◽

10.1109/sirf.2019.8709043 ◽

2019 ◽

Cited By ~ 1

Author(s):

Sathyasree Jeyaraman ◽

Venkata Vanukuru ◽

Deleep Nair ◽

Anjan Chakravorty

Keyword(s):

Compact Modeling ◽

Spiral Inductors

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[Copyright notice]

2019 IEEE 19th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) ◽

10.1109/sirf.2019.8709130 ◽

2019 ◽

Keyword(s):

Copyright Notice

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2019 IEEE 19th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)
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Table of contents

Modeling distributed dynamic lateral large-signal switching effects in bipolar transistors

Highly-Integrated <0.14mm2D -Band Receiver Front-Ends for Radar and Imaging Applications in a 130 nm SiGe BiCMOS Technology

Finite-element modelling of stress induced wafer warpage for a full BiCMOS process

W-band low-power millimeter-wave low noise amplifiers (LNAs)using SiGe HBTs in saturation region

A W-Band SiGe Transceiver with Built-in Self-Test

A 0.1-5.7 GHz CMOS Phase Shifter with 0.27dB/1.8° RMS Magnitude /Phase Errors and Enhanced Linearity

A Compact 24-32 GHz Linear Upconverting Mixer with -1.5 dBm OP1dB using 0.13-μ SiGe BiCMOS Process

Compact Modeling of Series Stacked Tapered Spiral Inductors

[Copyright notice]

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2019 IEEE 19th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Table of contents

Modeling distributed dynamic lateral large-signal switching effects in bipolar transistors

Highly-Integrated <0.14mm2D -Band Receiver Front-Ends for Radar and Imaging Applications in a 130 nm SiGe BiCMOS Technology

Finite-element modelling of stress induced wafer warpage for a full BiCMOS process

W-band low-power millimeter-wave low noise amplifiers (LNAs)using SiGe HBTs in saturation region

A W-Band SiGe Transceiver with Built-in Self-Test

A 0.1-5.7 GHz CMOS Phase Shifter with 0.27dB/1.8° RMS Magnitude /Phase Errors and Enhanced Linearity

A Compact 24-32 GHz Linear Upconverting Mixer with -1.5 dBm OP1dB using 0.13-μ SiGe BiCMOS Process

Compact Modeling of Series Stacked Tapered Spiral Inductors

[Copyright notice]

2019 IEEE 19th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)
Latest Publications