Defects and Properties of Semiconductors
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Published By Springer Netherlands

9789401086165, 9789400947665

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Characterization of Alloy Semiconductors

Defects and Properties of Semiconductors ◽

10.1007/978-94-009-4766-5_7 ◽

1987 ◽

pp. 111-132

Author(s):

T. Katoda

Keyword(s):

Alloy Semiconductors

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On the Formation Process of Thermal Donors in Czochralski-Grown Silicon Crystal

Defects and Properties of Semiconductors ◽

10.1007/978-94-009-4766-5_14 ◽

1987 ◽

pp. 219-226

Author(s):

M. Suezawa

Keyword(s):

Formation Process ◽

Silicon Crystal

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The Characteristics of Nitrogen in Silicon Crystals

Defects and Properties of Semiconductors ◽

10.1007/978-94-009-4766-5_12 ◽

1987 ◽

pp. 185-196 ◽

Author(s):

T. Abe ◽

T. Masui ◽

H. Harada ◽

J. Chikawa

Keyword(s):

Silicon Crystals

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Electrical Properties of DX Center in Selectively Doped AlGaAs/GaAs Heterostructure

Defects and Properties of Semiconductors ◽

10.1007/978-94-009-4766-5_8 ◽

1987 ◽

pp. 133-140

Author(s):

Masahiko Takikawa ◽

Masashi Ozeki

Keyword(s):

Electrical Properties ◽

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Point Defects and Impurities in Silicon Crystals

Defects and Properties of Semiconductors ◽

10.1007/978-94-009-4766-5_9 ◽

1987 ◽

pp. 143-153

Author(s):

Jun-ichi Chikawa

Keyword(s):

Point Defects ◽

Silicon Crystals ◽

Defects And Impurities

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Interaction of Dislocations with Impurities in Silicon

Defects and Properties of Semiconductors ◽

10.1007/978-94-009-4766-5_15 ◽

1987 ◽

pp. 227-259 ◽

Author(s):

Koji Sumino

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Oxygen in Silicon

Defects and Properties of Semiconductors ◽

10.1007/978-94-009-4766-5_13 ◽

1987 ◽

pp. 197-218 ◽

Author(s):

N. Inoue ◽

K. Wada ◽

J. Osaka

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Point Defects and Stacking Fault Growth in Silicon

Defects and Properties of Semiconductors ◽

10.1007/978-94-009-4766-5_11 ◽

1987 ◽

pp. 169-184 ◽

Author(s):

K. Wada ◽

N. Inoue

Keyword(s):

Point Defects ◽

Stacking Fault ◽

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Growth of Dislocation Free InP Single Crystals

Defects and Properties of Semiconductors ◽

10.1007/978-94-009-4766-5_5 ◽

1987 ◽

pp. 87-98

Author(s):

Seiji Shinoyama

Keyword(s):

Single Crystals

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Analysis of Nonstoichiometry and Doped Inpurities in GaAs by X-Ray Quasi-Forbidden Reflection (XFR) Method

Defects and Properties of Semiconductors ◽

10.1007/978-94-009-4766-5_4 ◽

1987 ◽

pp. 71-86

Author(s):

Isao Fujimoto

Keyword(s):

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