alloy semiconductors
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Author(s):  
Francisco De Santiago Varela ◽  
Martí Raya-Moreno ◽  
Alvaro Miranda ◽  
Miguel Cruz-Irisson ◽  
Xavier Cartoixa ◽  
...  

2021 ◽  
Vol 63 (10) ◽  
pp. 1484
Author(s):  
C. Xue ◽  
J. Zhang ◽  
X. Lu ◽  
M. Geng ◽  
T. Huang ◽  
...  

A phenomenon of blueshift saturation was observed from cathodoluminescence (CL) spectra of MgxZn1-xO films (0.069≤x≤0.8) which were grown by pulsed laser deposition technology. By analyzing the results of composition-dependent X-ray diffraction spectra, scanning electron microscopy images, absorption spectra and CL spectra, the crystalline structural disorder was determined via Urbach energy value. Furthermore, a competition mechanism between band-filling effect and band tail states was proposed in the composition-dependent CL spectra. This competition is believed to be responsible for the composition-induced blueshift saturation often observed in the disordered alloy semiconductors. The results of this research can provide important reference in energy-band engineering.


2019 ◽  
Vol 26 (2) ◽  
pp. 127-132
Author(s):  
Xuewen WANG ◽  
Wenwen LIU ◽  
Chunxue ZHAI ◽  
Jiangni YUN ◽  
Zhiyong ZHANG

Using the density functional theory (DFT) of the first principle and Generalized gradient approximation method, the electronic structures and optical properties of the InxGa1-xN crystals with different x (x = 0.25, 0.5, 0.75, 1) have been calculated in this paper. The influence of the electronic structure on the properties has been analyzed. Then the influence of doping quantity on the characteristics has been summarized, which also indicates the trend of complex dielectric function, absorption spectrum and transitivity. With the increase of x, the computational result shows that the optical band gap (i.e.Eg) of the InxGa1-xN crystal tends to be narrow, then the absorption spectrum shifts to the low-energy direction. And the Fermi energy slightly moves to the bottom of conduction band which would cause the growth of conductivity by increasing x. In a word, the InxGa1-xN compound can be achieved theoretically the adjustable Eg and photoelectric performance with x, which will be used in making various optoelectronic devices including solar cell and sensors.


2018 ◽  
Vol 9 (3) ◽  
pp. 635-640 ◽  
Author(s):  
Biswajit Bhattacharyya ◽  
Kushagra Gahlot ◽  
Ranjani Viswanatha ◽  
Anshu Pandey
Keyword(s):  

2018 ◽  
Vol 6 (34) ◽  
pp. 16316-16321 ◽  
Author(s):  
Ji Yong Choi ◽  
Ki Min Nam ◽  
Hyunjoon Song

The light absorption and electron mobility of alloy semiconductors significantly influenced the photocatalytic hydrogen evolution of Pt-tipped Zn1−xCdxSe nanorods.


2018 ◽  
Vol 20 (10) ◽  
pp. 6805-6810
Author(s):  
Pol Torres ◽  
Amr Mohammed ◽  
Àlvar Torelló ◽  
Javier Bafaluy ◽  
Juan Camacho ◽  
...  

Suppressing collective effects from momentum-conserving phonon collisions cause fast drop in thermal conductivity at small semiconductor alloy impurity concentrations.


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