Activation of two dopants, Bi and Er in δ-doped layer in Si crystal

Conventional doping processes are no longer viable for realizing extreme structures, such as a δ-doped layer with multiple elements, such as the heavy Bi, within the silicon crystal. Here, we demonstrate the formation of (Bi + Er)-δ-doped layer based on surface nanostructures, i.e. Bi nanolines, as the dopant source by molecular beam epitaxy. The concentration of both Er and Bi dopants is controlled by adjusting the amount of deposited Er atoms, the growth temperature during Si capping and surfactant techniques. Subsequent post-annealing processing is essential in this doping technique to obtain activated dopants in the δ-doped layer. Electric transport measurement and photoluminescence study revealed that both Bi and Er dopants were activated after post-annealing at moderate temperature.

The effects of ion implantation damage to photonic crystal optomechanical resonators in silicon

Optomechanical resonators were fabricated on a silicon-on-insulator (SOI) substrate that had been implanted with phosphorus donors. The resonators’ mechanical and optical properties were then measured (at 6 kelvin and room temperature) before and after the substrate was annealed. All measured resonators survived the annealing and their mechanical linewidths decreased while their optical and mechanical frequencies increased. This is consistent with crystal lattice damage from the ion implantation causing the optical and mechanical properties to degrade and then subsequently being repaired by the annealing. We explain these effects qualitatively with changes in the silicon crystal lattice structure. We also report on some unexplained features in the pre-anneal samples. In addition, we report partial fabrication of optomechanical resonators with neon ion milling.

Spheroidization Behavior of Nano-Primary Silicon Induced by Neodymium under High-Current Pulsed Electron Beam Irradiation

The spheroidization behavior of the nano-primary silicon phase induced by Nd under high-current pulsed electron beam (HCPEB) irradiation was investigated in this study. The study results revealed that, compared to the Al–17.5Si alloy, spheroidized nano-primary silicon phase emerged in the alloy’s HCPEB-irradiated surface layer due to the presence of Nd. Because Nd was abundantly enriched on the fast-growing silicon crystal plane, its surface tension was reduced under the extreme undercooling caused by HCPEB irradiation, causing the growth velocity of each crystal plane to be the same and spherical nanometers of silicon to appear. The spheroidization of nano-primary silicon phases occurred in the remelted layer. The microhardness test revealed that Nd could depress the microhardness of the Al matrix at the same number of pulses, but conversely increase the microhardness of the primary silicon phase, compared to the Al–17.5Si alloy. The tribological test showed that the presence of spherical nano-primary silicon could significantly improve the alloy’s tribological property.

Application of Neon Ion Implantation to Generate Intermediate Energy Levels in the Band Gap of Boron-Doped Silicon as a Material for Photovoltaic Cells

The aim of the work is to present the possibility of generating intermediate levels in the band gap of p-type silicon doped with boron by using neon ion implantation in the aspect of improving the efficiency of photovoltaic cells made on its basis. The work contains an analysis of the influence of the dose of neon ions on the activation energy value of additional energy levels. The article presents the results of measurements of the capacitance and conductance of silicon samples with a resistivity of r = 0.4 Ω cm doped with boron, the structure of which was modified in the implantation process with Ne+ ions with the energy E = 100 keV and three different doses of D = 4.0 × 1013 cm−2, 2.2 × 1014 cm−2 and 4.0 × 1014 cm−2, respectively. Activation energies were determined on the basis of Arrhenius curves ln(et(Tp)/Tp2) = f(1/kTp), where Tp is in the range from 200 K to 373 K and represents the sample temperature during the measurements, which were carried out for the frequencies fp in the range from 1 kHz to 10 MHz. In the tested samples, additional energy levels were identified and their position in the semiconductor band gap was determined by estimating the activation energy value. The conducted analysis showed that by introducing appropriate defects in the silicon crystal lattice as a result of neon ion implantation with a specific dose and energy, it is possible to generate additional energy levels DE = 0.46 eV in the semiconductor band gap, the presence of which directly affects the efficiency of photovoltaic cells made on the basis of such a modified material.

Reduction of impurity sources in Si crystal growth system with electron gun beam heating

A new series of experiments was conducted to determine the source of impurities in the process of silicon crystal growth with electron beam heating. A gas-dynamic window was placed between the electron gun and growth chamber. Also positively-charged traps were placed along the crucible to reduce the number of electrons hitting the chamber and the crucible. Five experiments were conducted: two with the window, two with charge traps, and one with both the window and charge traps. The analysis of obtained samples showed that the gas-dynamic window decreases the content of Al, Cu, Fe, Cr and O2, and the trap, used in the experiments, decreases the content of Fe, Cr and Cu in residues of the melt. The content of all impurities, except Al, is close to the goal level. Al impurities come only from the gun, but the gas-dynamic window cannot eliminate them completely. It seems that Al impurities come either as neutral atoms carried by the gas or as positively charged ions. To reduce these impurities, a separation of the Al flow from the beam by the magnetic field is proposed.