[1993] Proceedings of the 5th International Symposium on Power Semiconductor Devices and ICs
Latest Publications

TOTAL DOCUMENTS

(FIVE YEARS 0)

H-INDEX

(FIVE YEARS 0)

Published By IEEE

0780313135

Latest Documents Most Cited Documents Contributed Authors Related Sources Related Keywords

Wide bandgap compound semiconductors for superior high-voltage power devices

[1993] Proceedings of the 5th International Symposium on Power Semiconductor Devices and ICs ◽

10.1109/ispsd.1993.297113 ◽

2002 ◽

Cited By ~ 17

Author(s):

T.P. Chow ◽

R. Tyagi

Keyword(s):

High Voltage ◽

Compound Semiconductors ◽

Wide Bandgap ◽

Power Devices

Comparison of high voltage rectifier structures

[1993] Proceedings of the 5th International Symposium on Power Semiconductor Devices and ICs ◽

10.1109/ispsd.1993.297080 ◽

2002 ◽

Cited By ~ 11

Author(s):

M. Mehrotra ◽

B.J. Baliga

Keyword(s):

High Voltage

Large area MOS-gated power devices using fusible link technology

[1993] Proceedings of the 5th International Symposium on Power Semiconductor Devices and ICs ◽

10.1109/ispsd.1993.297117 ◽

2002 ◽

Cited By ~ 4

Author(s):

P. Venkatraman ◽

B.J. Baliga

Keyword(s):

Power Devices ◽

Large Area

A new double epitaxial layer dielectric isolation technology for HVICs

[1993] Proceedings of the 5th International Symposium on Power Semiconductor Devices and ICs ◽

10.1109/ispsd.1993.297114 ◽

2002 ◽

Cited By ~ 3

Author(s):

E.M.S. Narayanan ◽

G. Amaratunga ◽

W.I. Milne

Keyword(s):

Epitaxial Layer

A wafer bonded SOI structure for intelligent power ICs

[1993] Proceedings of the 5th International Symposium on Power Semiconductor Devices and ICs ◽

10.1109/ispsd.1993.297120 ◽

2002 ◽

Cited By ~ 5

Author(s):

T. Ohoka ◽

T. Yoshitake ◽

H. Kikuchi ◽

K. Okonogi

A fully integrable insulated gate bipolar transistor with a trench gate structure

[1993] Proceedings of the 5th International Symposium on Power Semiconductor Devices and ICs ◽

10.1109/ispsd.1993.297129 ◽

2002 ◽

Author(s):

P.V. Gilbert ◽

G.W. Neudeck ◽

R. Bashir ◽

J. Siekkinen ◽

J. Denton

Keyword(s):

Bipolar Transistor ◽

Insulated Gate Bipolar Transistor ◽

Gate Structure

Gate insulation yield loss due to lattice misfit stress in MCT and IGBT devices

[1993] Proceedings of the 5th International Symposium on Power Semiconductor Devices and ICs ◽

10.1109/ispsd.1993.297116 ◽

2002 ◽

Cited By ~ 4

Author(s):

E. Herr ◽

H. Baltes ◽

T. Stockmeier ◽

U. Thiemann

Keyword(s):

Yield Loss ◽

Lattice Misfit ◽

Misfit Stress

A study on the short circuit destruction of IGBTs

[1993] Proceedings of the 5th International Symposium on Power Semiconductor Devices and ICs ◽

10.1109/ispsd.1993.297103 ◽

2002 ◽

Cited By ~ 38

Author(s):

J. Yamashita ◽

A. Uenishi ◽

Y. Tomomatsu ◽

H. Haruguchi ◽

H. Takahashi ◽

...

Keyword(s):

Short Circuit

Predicting hysteretic oscillations in over-temperature protection of a power IC using transient electrothermal circuit simulation

[1993] Proceedings of the 5th International Symposium on Power Semiconductor Devices and ICs ◽

10.1109/ispsd.1993.297143 ◽

2002 ◽

Cited By ~ 2

Author(s):

R.K. Williams ◽

L.T. Sevilla ◽

M.C. Rodamaker

Keyword(s):

Circuit Simulation ◽

Power Ic

Analysis of stress in power bipolar devices during inductive turn-off

[1993] Proceedings of the 5th International Symposium on Power Semiconductor Devices and ICs ◽

10.1109/ispsd.1993.297085 ◽

2002 ◽

Cited By ~ 3

Author(s):

L. Fratelli ◽

G. Vitale ◽

P. Spirito

Keyword(s):

Bipolar Devices

[1993] Proceedings of the 5th International Symposium on Power Semiconductor Devices and ICsLatest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Wide bandgap compound semiconductors for superior high-voltage power devices

Comparison of high voltage rectifier structures

Large area MOS-gated power devices using fusible link technology

A new double epitaxial layer dielectric isolation technology for HVICs

A wafer bonded SOI structure for intelligent power ICs

A fully integrable insulated gate bipolar transistor with a trench gate structure

Gate insulation yield loss due to lattice misfit stress in MCT and IGBT devices

A study on the short circuit destruction of IGBTs

Predicting hysteretic oscillations in over-temperature protection of a power IC using transient electrothermal circuit simulation

Analysis of stress in power bipolar devices during inductive turn-off

[1993] Proceedings of the 5th International Symposium on Power Semiconductor Devices and ICs
Latest Publications