2017 IEEE Electron Devices Technology and Manufacturing Conference (EDTM)
Latest Publications

TOTAL DOCUMENTS

118

(FIVE YEARS 0)

H-INDEX

(FIVE YEARS 0)

Published By IEEE

9781509046607

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Tutorials

2017 IEEE Electron Devices Technology and Manufacturing Conference (EDTM) ◽

10.1109/edtm.2017.7947488 ◽

2017 ◽

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Analysis of break-even time for nonvolatile SRAM with SOTB technology

2017 IEEE Electron Devices Technology and Manufacturing Conference (EDTM) ◽

10.1109/edtm.2017.7947511 ◽

2017 ◽

Cited By ~ 1

Author(s):

Daiki Kitagata ◽

Yusuke Shuto ◽

Shuu'ichirou Yamamoto ◽

Satoshi Sugahara

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Nano-structure-controlled very low resistivity Cu wires formed by high purity electrolyte and optimized additives

2017 IEEE Electron Devices Technology and Manufacturing Conference (EDTM) ◽

10.1109/edtm.2017.7947537 ◽

2017 ◽

Author(s):

Jin Onuki ◽

Kunihiro Tamahashi ◽

Takashi Inami ◽

Takatoshi Nagano ◽

Yasushi Sasajima ◽

...

Keyword(s):

High Purity ◽

Nano Structure ◽

Low Resistivity

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Development of in-situ Sb-Doped Ge1−xSnx Epitaxial Layers for Source/Drain Stressor of Strained Ge Transistors

2017 IEEE Electron Devices Technology and Manufacturing Conference (EDTM) ◽

10.1109/edtm.2017.7947585 ◽

2017 ◽

Author(s):

Jihee Jeon ◽

Akihiro Suzuki ◽

Kouta Takahashi ◽

Osamu Nakatsuka ◽

Shigeaki Zaima

Keyword(s):

Epitaxial Layers

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Endurance characterization of the Cu-dope HfO2 based selection device with one transistor-one selector structure

2017 IEEE Electron Devices Technology and Manufacturing Conference (EDTM) ◽

10.1109/edtm.2017.7947590 ◽

2017 ◽

Author(s):

Qing Luo ◽

Xiaoxin Xu ◽

Hangbing Lv ◽

Tiancheng Gong ◽

Shibing Long ◽

...

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EUV lithography insertion for high volume manufacturing: Status and outlook

2017 IEEE Electron Devices Technology and Manufacturing Conference (EDTM) ◽

10.1109/edtm.2017.7947525 ◽

2017 ◽

Cited By ~ 2

Author(s):

Alek Chen ◽

Junji Miyazaki

Keyword(s):

High Volume ◽

Euv Lithography

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Photoresist development for wafer-level packaging process

2017 IEEE Electron Devices Technology and Manufacturing Conference (EDTM) ◽

10.1109/edtm.2017.7947580 ◽

2017 ◽

Author(s):

Makiko Irie ◽

Toshiaki Tachi ◽

Atushi Sawano

Keyword(s):

Wafer Level ◽

Packaging Process ◽

Wafer Level Packaging

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[Front cover]

2017 IEEE Electron Devices Technology and Manufacturing Conference (EDTM) ◽

10.1109/edtm.2017.7947484 ◽

2017 ◽

Keyword(s):

Front Cover

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Second-harmonic susceptibility enhancement in Gallium nitride nanopillars

2017 IEEE Electron Devices Technology and Manufacturing Conference (EDTM) ◽

10.1109/edtm.2017.7947581 ◽

2017 ◽

Cited By ~ 1

Author(s):

Kangwei Wang ◽

Haoliang Qian ◽

Zhaowei Liu ◽

Paul K. L. Yu

Keyword(s):

Gallium Nitride ◽

Second Harmonic

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2017 IEEE Electron Devices Technology and Manufacturing Conference (EDTM) ◽

10.1109/edtm.2017.7947487 ◽

2017 ◽

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2017 IEEE Electron Devices Technology and Manufacturing Conference (EDTM)
Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Tutorials

Analysis of break-even time for nonvolatile SRAM with SOTB technology

Nano-structure-controlled very low resistivity Cu wires formed by high purity electrolyte and optimized additives

Development of in-situ Sb-Doped Ge1−xSnx Epitaxial Layers for Source/Drain Stressor of Strained Ge Transistors

Endurance characterization of the Cu-dope HfO2 based selection device with one transistor-one selector structure

EUV lithography insertion for high volume manufacturing: Status and outlook

Photoresist development for wafer-level packaging process

[Front cover]

Second-harmonic susceptibility enhancement in Gallium nitride nanopillars

Table of contents

Export Citation Format

2017 IEEE Electron Devices Technology and Manufacturing Conference (EDTM)Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Tutorials

Analysis of break-even time for nonvolatile SRAM with SOTB technology

Nano-structure-controlled very low resistivity Cu wires formed by high purity electrolyte and optimized additives

Development of in-situ Sb-Doped Ge1−xSnx Epitaxial Layers for Source/Drain Stressor of Strained Ge Transistors

Endurance characterization of the Cu-dope HfO2 based selection device with one transistor-one selector structure

EUV lithography insertion for high volume manufacturing: Status and outlook

Photoresist development for wafer-level packaging process

[Front cover]

Second-harmonic susceptibility enhancement in Gallium nitride nanopillars

Table of contents

2017 IEEE Electron Devices Technology and Manufacturing Conference (EDTM)
Latest Publications