2017 IEEE Electron Devices Technology and Manufacturing Conference (EDTM)
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118
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Published By IEEE

9781509046607
Latest Documents Most Cited Documents Contributed Authors Related Sources Related Keywords

Analysis of break-even time for nonvolatile SRAM with SOTB technology

2017 ◽  
Author(s):  
Daiki Kitagata ◽  
Yusuke Shuto ◽  
Shuu'ichirou Yamamoto ◽  
Satoshi Sugahara

Nano-structure-controlled very low resistivity Cu wires formed by high purity electrolyte and optimized additives

2017 ◽  
Author(s):  
Jin Onuki ◽  
Kunihiro Tamahashi ◽  
Takashi Inami ◽  
Takatoshi Nagano ◽  
Yasushi Sasajima ◽  
...  
Keyword(s):  
High Purity ◽  
Nano Structure ◽  
Low Resistivity

Development of in-situ Sb-Doped Ge1−xSnx Epitaxial Layers for Source/Drain Stressor of Strained Ge Transistors

2017 ◽  
Author(s):  
Jihee Jeon ◽  
Akihiro Suzuki ◽  
Kouta Takahashi ◽  
Osamu Nakatsuka ◽  
Shigeaki Zaima
Keyword(s):  
Epitaxial Layers

Endurance characterization of the Cu-dope HfO2 based selection device with one transistor-one selector structure

2017 ◽  
Author(s):  
Qing Luo ◽  
Xiaoxin Xu ◽  
Hangbing Lv ◽  
Tiancheng Gong ◽  
Shibing Long ◽  
...  

Photoresist development for wafer-level packaging process

2017 ◽  
Author(s):  
Makiko Irie ◽  
Toshiaki Tachi ◽  
Atushi Sawano
Keyword(s):  
Wafer Level ◽  
Packaging Process ◽  
Wafer Level Packaging

Second-harmonic susceptibility enhancement in Gallium nitride nanopillars

2017 ◽  
Author(s):  
Kangwei Wang ◽  
Haoliang Qian ◽  
Zhaowei Liu ◽  
Paul K. L. Yu
Keyword(s):  
Gallium Nitride ◽  
Second Harmonic
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