2009 10th Annual Non-Volatile Memory Technology Symposium (NVMTS)
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9781424449538

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Reliability issues of using barrier-engineered (BE) tunneling dielectric for floating gate flash memories

2009 10th Annual Non-Volatile Memory Technology Symposium (NVMTS) ◽

10.1109/nvmt.2009.5429774 ◽

2009 ◽

Author(s):

Hang-Ting Lue ◽

Kuang-Yeu Hsieh ◽

R. Liu ◽

Chih-Yuan Lu

Keyword(s):

Floating Gate ◽

Flash Memories

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Electrical characterization of resistive memory in metal-Pr0.7Ca0.3MnO3 interface: A future non-volatile memory device

2009 10th Annual Non-Volatile Memory Technology Symposium (NVMTS) ◽

10.1109/nvmt.2009.5429779 ◽

2009 ◽

Author(s):

N. Das ◽

Y.Y. Xue ◽

Y.Q. Wang ◽

C.W. Chu

Keyword(s):

Electrical Characterization ◽

Memory Device ◽

Resistive Memory ◽

Non Volatile Memory ◽

Volatile Memory

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Influence of interfaces on the crystallization characteristics of Ge2Sb2Te5

2009 10th Annual Non-Volatile Memory Technology Symposium (NVMTS) ◽

10.1109/nvmt.2009.5465042 ◽

2009 ◽

Cited By ~ 1

Author(s):

Huai-Yu Cheng ◽

Simone Raoux ◽

Becky Munoz ◽

Jean Jordan-Sweet

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Analysis of trap mechanisms responsible for Random Telegraph Noise and erratic programming on sub-50nm floating gate flash memories

2009 10th Annual Non-Volatile Memory Technology Symposium (NVMTS) ◽

10.1109/nvmt.2009.5429788 ◽

2009 ◽

Cited By ~ 4

Author(s):

K. Seidel ◽

R. Hoffmann ◽

D. A. Lohr ◽

T. Melde ◽

M. Czernohorsky ◽

...

Keyword(s):

Floating Gate ◽

Flash Memories ◽

Random Telegraph Noise ◽

Telegraph Noise

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2009 10th Annual Non-Volatile Memory Technology Symposium (NVMTS) ◽

10.1109/nvmt.2009.5429771 ◽

2009 ◽

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Author index

2009 10th Annual Non-Volatile Memory Technology Symposium (NVMTS) ◽

10.1109/nvmt.2009.5429775 ◽

2009 ◽

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Measurement of anisotropy in the thermal conductivity of Ge2Sb2Te5 films

2009 10th Annual Non-Volatile Memory Technology Symposium (NVMTS) ◽

10.1109/nvmt.2009.5429777 ◽

2009 ◽

Author(s):

Jaeho Lee ◽

J.P. Reifenberg ◽

Zijian Li ◽

L. Hom ◽

M. Asheghi ◽

...

Keyword(s):

Thermal Conductivity

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Density functional study of Ag in Ge2Se3

2009 10th Annual Non-Volatile Memory Technology Symposium (NVMTS) ◽

10.1109/nvmt.2009.5465048 ◽

2009 ◽

Author(s):

Arthur Edwards ◽

Kristy Campbell

Keyword(s):

Density Functional ◽

Functional Study ◽

Density Functional Study

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Impact of hydrogen on the electroforming of Pr0.7Ca0.3MnO3 resistance-change memory devices

2009 10th Annual Non-Volatile Memory Technology Symposium (NVMTS) ◽

10.1109/nvmt.2009.5429776 ◽

2009 ◽

Cited By ~ 2

Author(s):

M.P. Tendulkara ◽

J.R. Jameson ◽

P.B. Griffin ◽

J.P. McVittie ◽

Y. Nishi

Keyword(s):

Memory Devices ◽

Resistance Change ◽

Change Memory

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Cover

2009 10th Annual Non-Volatile Memory Technology Symposium (NVMTS) ◽

10.1109/nvmt.2009.5429773 ◽

2009 ◽

Download Full-text

2009 10th Annual Non-Volatile Memory Technology Symposium (NVMTS)
Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Reliability issues of using barrier-engineered (BE) tunneling dielectric for floating gate flash memories

Electrical characterization of resistive memory in metal-Pr0.7Ca0.3MnO3 interface: A future non-volatile memory device

Influence of interfaces on the crystallization characteristics of Ge2Sb2Te5

Analysis of trap mechanisms responsible for Random Telegraph Noise and erratic programming on sub-50nm floating gate flash memories

Table of contents

Author index

Measurement of anisotropy in the thermal conductivity of Ge2Sb2Te5 films

Density functional study of Ag in Ge2Se3

Impact of hydrogen on the electroforming of Pr0.7Ca0.3MnO3 resistance-change memory devices

Cover

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2009 10th Annual Non-Volatile Memory Technology Symposium (NVMTS)Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Reliability issues of using barrier-engineered (BE) tunneling dielectric for floating gate flash memories

Electrical characterization of resistive memory in metal-Pr0.7Ca0.3MnO3 interface: A future non-volatile memory device

Influence of interfaces on the crystallization characteristics of Ge2Sb2Te5

Analysis of trap mechanisms responsible for Random Telegraph Noise and erratic programming on sub-50nm floating gate flash memories

Table of contents

Author index

Measurement of anisotropy in the thermal conductivity of Ge2Sb2Te5 films

Density functional study of Ag in Ge2Se3

Impact of hydrogen on the electroforming of Pr0.7Ca0.3MnO3 resistance-change memory devices

Cover

2009 10th Annual Non-Volatile Memory Technology Symposium (NVMTS)
Latest Publications