Electrical characterization of resistive memory in metal-Pr0.7Ca0.3MnO3 interface: A future non-volatile memory device

2009 ◽  
Author(s):  
N. Das ◽  
Y.Y. Xue ◽  
Y.Q. Wang ◽  
C.W. Chu
Keyword(s):  
Electrical Characterization ◽  
Memory Device ◽  
Resistive Memory ◽  
Non Volatile Memory ◽  
Volatile Memory

A novel, nanocrystal (nc) based non-volatile memory device

2000 ◽  
Vol 638 ◽  
Author(s):  
Jan W. De Blauwe ◽  
Marty L. Green ◽  
Tom W. Sorsch ◽  
Garry R. Weber ◽  
Jeff D. Bude ◽  
...  
Keyword(s):  
Low Cost ◽  
Electrical Characterization ◽  
Memory Device ◽  
Fabrication Process ◽  
Floating Gate ◽  
Potential Candidate ◽  
Non Volatile Memory ◽  
Volatile Memory

AbstractThis paper describes the fabrication, and structural and electrical characterization of a new, aerosol-nanocrystal floating-gate FET, aimed at non-volatile memory (NVM) applications. This aerosol- nanocrystal NVM device features program/erase characteristics comparable to conventional stacked gate NVM devices, excellent endurance (>105 P/E cycles), and long-term non-volatility in spite of a thin bottom oxide (55-60Å). In addition, a very simple fabrication process makes this aerosol-nanocrystal NVM device a potential candidate for low cost NVM applications.

Electrical Characterization of Non Volatile Memory Device with In2O3 Nano-Particles Embedded in Polyimide

2007 ◽  
Vol 51 (96) ◽  
pp. 318 ◽  
Author(s):  
Dong Uk LEE ◽  
Seon Pil KIM ◽  
Jae-Hoon KIM ◽  
Eun Kyu KIM ◽  
Hyun-Mo KOO ◽  
...  
Keyword(s):  
Electrical Characterization ◽  
Memory Device ◽  
Nano Particles ◽  
Non Volatile Memory ◽  
Volatile Memory

Electrical characterization of SrBi2Ta2O9 thin films for ferroelectric non-volatile memory applications

1996 ◽  
Vol 12 (1) ◽  
pp. 23-31 ◽  
Author(s):  
R. E. Jones ◽  
Peter Zurcher ◽  
B. Jiang ◽  
J. Z. Witowski ◽  
Y. T. Lii ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Characterization ◽  
Non Volatile Memory ◽  
Volatile Memory ◽  
Memory Applications

scholarly journals Hysteresis Behavior of the Donor–Acceptor-Type Ambipolar Semiconductor for Non-Volatile Memory Applications

Micromachines ◽  
2021 ◽  
Vol 12 (3) ◽  
pp. 301
Author(s):  
Young Jin Choi ◽  
Jihyun Kim ◽  
Min Je Kim ◽  
Hwa Sook Ryu ◽  
Han Young Woo ◽  
...  
Keyword(s):  
Organic Semiconductor ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Memory Device ◽  
Non Volatile Memory ◽  
Device Applications ◽  
Donor Acceptor ◽  
Effect Transistor ◽  
Volatile Memory ◽  
Memory Applications

Donor–acceptor-type organic semiconductor molecules are of great interest for potential organic field-effect transistor applications with ambipolar characteristics and non-volatile memory applications. Here, we synthesized an organic semiconductor, PDPPT-TT, and directly utilized it in both field-effect transistor and non-volatile memory applications. As-synthesized PDPPT-TT was simply spin-coated on a substrate for the device fabrications. The PDPPT-TT based field-effect transistor showed ambipolar electrical transfer characteristics. Furthermore, a gold nanoparticle-embedded dielectric layer was used as a charge trapping layer for the non-volatile memory device applications. The non-volatile memory device showed clear memory window formation as applied gate voltage increases, and electrical stability was evaluated by performing retention and cycling tests. In summary, we demonstrate that a donor–acceptor-type organic semiconductor molecule shows great potential for ambipolar field-effect transistors and non-volatile memory device applications as an important class of materials.

Fabrication and characterization of MFISFET using Al2O3 insulating layer for non-volatile memory

2001 ◽  
Vol 34 (1-4) ◽  
pp. 113-120 ◽  
Author(s):  
Chang Ho Shin ◽  
Seon Yong Cha ◽  
Hee Chul Lee ◽  
Won-Jae Lee ◽  
Byoung-Gon Yu ◽  
...  
Keyword(s):  
Insulating Layer ◽  
Non Volatile Memory ◽  
Fabrication And Characterization ◽  
Volatile Memory

Programmable polymer thin film and non-volatile memory device

2004 ◽  
Vol 3 (12) ◽  
pp. 918-922 ◽  
Author(s):  
Jianyong Ouyang ◽  
Chih-Wei Chu ◽  
Charles R. Szmanda ◽  
Liping Ma ◽  
Yang Yang
Keyword(s):  
Thin Film ◽  
Memory Device ◽  
Polymer Thin Film ◽  
Non Volatile Memory ◽  
Volatile Memory
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