Proceedings of the 3rd IEEE International Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO 95

2002 ◽

Cited By ~ 4

Author(s):

Y. Baeyens ◽

D. Schreurs ◽

B. Nauwelaers ◽

K. Van der Zanden ◽

M. Van Hove ◽

...

Keyword(s):

High Gain ◽

Dual Gate

Download Full-text

Strain-balanced quantum wells for power FET applications

Proceedings of the 3rd IEEE International Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO 95 ◽

10.1109/edmo.1995.493687 ◽

2002 ◽

Cited By ~ 1

Author(s):

J.J. Harris ◽

J.M. Roberts ◽

R. Jaszek ◽

M. Hopkinson

Keyword(s):

Quantum Wells

Download Full-text

The electronic behaviour of Si/sub 3/N/sub 4/-GaAs interfaces

Proceedings of the 3rd IEEE International Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO 95 ◽

10.1109/edmo.1995.493685 ◽

2002 ◽

Cited By ~ 1

Author(s):

J.G. Swanson ◽

Q.H. Wang ◽

M.I. Bowser

Download Full-text

Transient three-dimensional device simulation with PARDESIM

Proceedings of the 3rd IEEE International Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO 95 ◽

10.1109/edmo.1995.493707 ◽

2002 ◽

Author(s):

C. Gatzke ◽

D. Schroeder

Keyword(s):

Three Dimensional ◽

Device Simulation

Download Full-text

Characterization of Pd/Sn ohmic contacts on n-GaAs using electrical measurements, EDAX and SIMS

Proceedings of the 3rd IEEE International Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO 95 ◽

10.1109/edmo.1995.493689 ◽

2002 ◽

Cited By ~ 2

Author(s):

M.S. Islam ◽

P.J. McNally ◽

D.C. Cameron ◽

P.A.F. Herbert

Keyword(s):

Ohmic Contacts ◽

Electrical Measurements

Download Full-text

A silica-on-silicon integrated optic interface for microwave sub-systems

Proceedings of the 3rd IEEE International Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO 95 ◽

10.1109/edmo.1995.493714 ◽

2002 ◽

Author(s):

M.M. Murphy ◽

C.R. Rescod

Download Full-text

The influence of bias conditions upon the intrinsic noise parameters of short gate length GaAs MESFETs

Proceedings of the 3rd IEEE International Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO 95 ◽

10.1109/edmo.1995.493701 ◽

2002 ◽

Author(s):

S.D. Greaves ◽

R.T. Unwin

Keyword(s):

Intrinsic Noise ◽

Gate Length ◽

Noise Parameters

Download Full-text

Noise figure and gain of HEMTs vs. bias conditions measured by noise figure test-set

Proceedings of the 3rd IEEE International Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO 95 ◽

10.1109/edmo.1995.493703 ◽

2002 ◽

Author(s):

A. Di Paola ◽

M. Sannino

Keyword(s):

Noise Figure ◽

Test Set ◽

Figure Test

Download Full-text

Low turn-on voltage AlGaInP LEDs using thermally evaporated transparent conducting Indium-Tin-Oxide (ITO)

Proceedings of the 3rd IEEE International Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO 95 ◽

10.1109/edmo.1995.493699 ◽

2002 ◽

Author(s):

Y.H. Aliyu ◽

D.V. Morgan ◽

H. Thomas ◽

S.W. Bland

Keyword(s):

Tin Oxide ◽

Indium Tin Oxide ◽

Turn On ◽

Transparent Conducting

Download Full-text

On temperature and hot electron induced degradation in AlGaAs/InGaAs PM-HEMT's

Proceedings of the 3rd IEEE International Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO 95 ◽

10.1109/edmo.1995.493709 ◽

2002 ◽

Cited By ~ 2

Author(s):

G. Meneghesso ◽

E. De Bortoli ◽

P. Cova ◽

R. Menozzi

Keyword(s):

Hot Electron

Download Full-text

Proceedings of the 3rd IEEE International Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO 95
Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

GaAs and InP-based dual-gate HEMTs for high-gain MMIC amplifiers

Strain-balanced quantum wells for power FET applications

The electronic behaviour of Si/sub 3/N/sub 4/-GaAs interfaces

Transient three-dimensional device simulation with PARDESIM

Characterization of Pd/Sn ohmic contacts on n-GaAs using electrical measurements, EDAX and SIMS

A silica-on-silicon integrated optic interface for microwave sub-systems

The influence of bias conditions upon the intrinsic noise parameters of short gate length GaAs MESFETs

Noise figure and gain of HEMTs vs. bias conditions measured by noise figure test-set

Low turn-on voltage AlGaInP LEDs using thermally evaporated transparent conducting Indium-Tin-Oxide (ITO)

On temperature and hot electron induced degradation in AlGaAs/InGaAs PM-HEMT's

Export Citation Format

Proceedings of the 3rd IEEE International Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO 95Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

GaAs and InP-based dual-gate HEMTs for high-gain MMIC amplifiers

Strain-balanced quantum wells for power FET applications

The electronic behaviour of Si/sub 3/N/sub 4/-GaAs interfaces

Transient three-dimensional device simulation with PARDESIM

Characterization of Pd/Sn ohmic contacts on n-GaAs using electrical measurements, EDAX and SIMS

A silica-on-silicon integrated optic interface for microwave sub-systems

The influence of bias conditions upon the intrinsic noise parameters of short gate length GaAs MESFETs

Noise figure and gain of HEMTs vs. bias conditions measured by noise figure test-set

Low turn-on voltage AlGaInP LEDs using thermally evaporated transparent conducting Indium-Tin-Oxide (ITO)

On temperature and hot electron induced degradation in AlGaAs/InGaAs PM-HEMT's

Proceedings of the 3rd IEEE International Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO 95
Latest Publications