The influence of bias conditions upon the intrinsic noise parameters of short gate length GaAs MESFETs

The noise behavior of a two-port is usually described through the conventional set of noise parameters Fmin, Rn, and the complex Yopt. However, noise parameters developed using wave-based techniques also have their merit as they could offer different insights to a two-port's noise behavior. Unlike the conventional noise parameters, these wave-based noise parameters could be terminal-invariant and describe only the intrinsic noise behavior of a two-port. In this paper, several important noise parameters derived from wave-based approaches are reviewed. The derivation of each set of parameters is discussed and illustrated. The measurement approach of each set of parameters is also briefly covered.

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The extraction of GaAs MESFET intrinsic noise parameters and their variation with bias

10.1049/ic:19960178 ◽

1996 ◽

Author(s):

S.D. Greaves

Keyword(s):

Intrinsic Noise ◽

Noise Parameters ◽

Gaas Mesfet

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ON THE INFLUENCE OF SPACE-QUANTIZATION EFFECTS ON THE RF NOISE BEHAVIOUR OF DG MOSFETS

Fluctuation and Noise Letters ◽

10.1142/s0219477504002191 ◽

2004 ◽

Vol 04 (04) ◽

pp. L561-L569 ◽

Cited By ~ 2

Author(s):

RAUL RENGEL ◽

TOMAS GONZALEZ ◽

MARIA J. MARTIN

Keyword(s):

High Frequency ◽

Quantum Confinement ◽

Microwave Frequency ◽

Intrinsic Noise ◽

Frequency Noise ◽

Noise Sources ◽

Noise Parameters ◽

Monte Carlo Investigation ◽

Quantum Phenomena ◽

Rf Noise

We present a particle-based Monte Carlo investigation of the high frequency noise behavior of a double gate MOSFET. The effective potential approach has been considered for the description of vertical quantum confinement of carriers within the channel. The intrinsic noise sources and the main circuital noise parameters are studied, together with the static and dynamic parameters, thus allowing to provide a full comprehension of the inner physics of the device and elucidating the consequences of quantum mechanical space-quantization effects (like charge repulsion from the gate-oxide boundaries). Results show that neglecting quantum phenomena leads to an important overestimation of gate capacitance and device transconductance and an underestimation of the final influence of induced gate noise (via the normalized parameter R) on the circuital noise parameters at RF and microwave frequency ranges.

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An analytical approach to the HEMT noise wave model parameter determination

Serbian Journal of Electrical Engineering ◽

10.2298/sjee1701035d ◽

2017 ◽

Vol 14 (1) ◽

pp. 35-49

Author(s):

Vladica Djordjevic ◽

Zlatica Marinkovic ◽

Olivera Pronic-Rancic ◽

Vera Markovic

Keyword(s):

Analytical Approach ◽

Wave Model ◽

High Electron Mobility Transistor ◽

Intrinsic Noise ◽

Parameter Determination ◽

Second Step ◽

Model Parameters ◽

High Electron ◽

Noise Parameters

This paper presents an analytical approach to determination of the noise wave model parameters for a high electron-mobility transistor working under different temperature and frequency conditions. The presented approach is composed of two steps and provides more efficient determination of these parameters than in the case of optimization procedures commonly applied for that purpose in circuit simulators. The first step is extraction of the noise parameters of transistor intrinsic circuit from the measured noise parameters of whole transistor using an analytical noise de-embedding procedure. The second step is calculation of the noise wave model parameters from the de-embedded intrinsic noise parameters using existing formulas. The accuracy of the presented approach is validated in a wide frequency and temperature range by comparison of the transistor noise parameters simulated for the determined noise wave model parameters with the measured noise parameters.

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SIMULATION OF THERMAL NOISE IN SCALED MOSFETS

Fluctuation and Noise Letters ◽

10.1142/s0219477502000683 ◽

2002 ◽

Vol 02 (02) ◽

pp. L109-L116 ◽

Cited By ~ 4

Author(s):

SERGIO SPEDO ◽

CLAUDIO FIEGNA

Keyword(s):

Low Power ◽

Thermal Noise ◽

Gate Length ◽

Noise Performance ◽

Spectral Densities ◽

Technology Scaling ◽

Noise Parameters ◽

Rf Systems ◽

The Impact

In this work, hydrodynamic device simulations and a post-processor for the simulation of noise in MOSFETs are applied in order to evaluate the impact of scaling on the thermal noise of transistors representative of technologies with minimum gate length scaled from 0.25 μm down to 0.1 μm. The dependences on bias and technology scaling of the spectral densities of the equivalent drain- and induced gate-noise currents are anayzed in details. The effect of technology scaling on the two-port noise parameters of the intrinsic MOSFET is studied as well. The results of this work confirm that the transistor's noise performance tend to improve as the technology is scaled down, making CMOS a suitable technological option for the implementation of advanced low-power RF systems.

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