Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005.
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A high performance Complementary Bipolar Process controlling Base poly-Si Over-Etching in emitter region and using SOI or PBSOI technique

Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005. ◽

10.1109/ispsd.2005.1487977 ◽

2005 ◽

Cited By ~ 1

Author(s):

S. H. Lee J. H. Kim

Keyword(s):

High Performance ◽

Emitter Region ◽

Process Controlling

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Hot-Carrier Reliability of High Side NDMOS in Smart Power SOI Technologies

Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005. ◽

10.1109/ispsd.2005.1487961 ◽

2005 ◽

Cited By ~ 2

Author(s):

Stefan Schwantes Franz Dietz

Keyword(s):

Smart Power ◽

Hot Carrier ◽

High Side

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Break-through of the trade-off between on-resistance and ESD endurance in LDMOS

Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005. ◽

10.1109/ispsd.2005.1487980 ◽

2005 ◽

Cited By ~ 1

Author(s):

Hitoshi Yamaguchi Naohiro Suzuki

Keyword(s):

Trade Off

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PDP Scan Driver with NVDMOS and RESURF PLDMOS

Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005. ◽

10.1109/ispsd.2005.1487973 ◽

2005 ◽

Author(s):

Weifeng Sun Zhilin Sun

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Architecture optimization of an n-channel ldmos device dedicated to RF-power application

Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005. ◽

10.1109/ispsd.2005.1487975 ◽

2005 ◽

Cited By ~ 3

Author(s):

A. Giry D. Muller

Keyword(s):

Rf Power ◽

Power Application ◽

Architecture Optimization

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10kV Trench Gate IGBTs on 4H-SiC

Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005. ◽

10.1109/ispsd.2005.1488011 ◽

2005 ◽

Cited By ~ 15

Author(s):

H.-R. Chang Q. Zhang

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A Novel Drift Region Self-Aligned SOI Power MOSFET Using a Partial Exposure Technique

Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005. ◽

10.1109/ispsd.2005.1487978 ◽

2005 ◽

Author(s):

Johnny K. O. Sin Lingpeng Guan

Keyword(s):

Drift Region ◽

Power Mosfet ◽

Exposure Technique

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Evaluation of self-heating effects on an innovative SOI technology (�Venezia� process)

Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005. ◽

10.1109/ispsd.2005.1487951 ◽

2005 ◽

Cited By ~ 1

Author(s):

S. Favilla P. Villani

Keyword(s):

Self Heating ◽

Heating Effects ◽

Soi Technology

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1.5kV Novel 4H-SiC Lateral Channel (LC) JBS Rectifiers with Low Leakage Current and Capacitance

Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005. ◽

10.1109/ispsd.2005.1488006 ◽

2005 ◽

Cited By ~ 1

Author(s):

Canhua Li Lin Zhu

Keyword(s):

Leakage Current ◽

Low Leakage ◽

Low Leakage Current ◽

Lateral Channel

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On the Safe Operating Area of power Schottky diodes in avalanche conditions

Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005. ◽

10.1109/ispsd.2005.1487991 ◽

2005 ◽

Cited By ~ 3

Author(s):

G. Breglio A. Irace

Keyword(s):

Schottky Diodes ◽

Safe Operating

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Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005.Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

A high performance Complementary Bipolar Process controlling Base poly-Si Over-Etching in emitter region and using SOI or PBSOI technique

Hot-Carrier Reliability of High Side NDMOS in Smart Power SOI Technologies

Break-through of the trade-off between on-resistance and ESD endurance in LDMOS

PDP Scan Driver with NVDMOS and RESURF PLDMOS

Architecture optimization of an n-channel ldmos device dedicated to RF-power application

10kV Trench Gate IGBTs on 4H-SiC

A Novel Drift Region Self-Aligned SOI Power MOSFET Using a Partial Exposure Technique

Evaluation of self-heating effects on an innovative SOI technology (�Venezia� process)

1.5kV Novel 4H-SiC Lateral Channel (LC) JBS Rectifiers with Low Leakage Current and Capacitance

On the Safe Operating Area of power Schottky diodes in avalanche conditions

Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005.
Latest Publications