2019 IEEE International Electron Devices Meeting (IEDM)
Latest Publications

TOTAL DOCUMENTS

245

(FIVE YEARS 245)

H-INDEX

8

(FIVE YEARS 8)

Published By IEEE

9781728140322

Latest Documents Most Cited Documents Contributed Authors Related Sources Related Keywords

Investigation of nBTI degradation on GaN-on-Si E-mode MOSc-HEMT

2019 IEEE International Electron Devices Meeting (IEDM) ◽

10.1109/iedm19573.2019.8993588 ◽

2019 ◽

Author(s):

A.G. Viey ◽

W. Vandendaele ◽

M.-A. Jaud ◽

J. Cluzel ◽

J.-P. Barnes ◽

...

Keyword(s):

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Monolithic 3D SRAM-CIM Macro Fabricated with BEOL Gate-All-Around MOSFETs

2019 IEEE International Electron Devices Meeting (IEDM) ◽

10.1109/iedm19573.2019.8993628 ◽

2019 ◽

Author(s):

Fu-Kuo Hsueh ◽

Chun-Ying Lee ◽

Cheng-Xin Xue ◽

Chang-Hong Shen ◽

Jia-Min Shieh ◽

...

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Learning with Resistive Switching Neural Networks

2019 IEEE International Electron Devices Meeting (IEDM) ◽

10.1109/iedm19573.2019.8993465 ◽

2019 ◽

Author(s):

Mingyi Rao ◽

Qiangfei Xia ◽

J. Joshua Yang ◽

Zhongrui Wang ◽

Can Li ◽

...

Keyword(s):

Neural Networks ◽

Resistive Switching

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Formation of High Reliability Hydrogen-free MONOS Cells Using Deuterated Ammonia

2019 IEEE International Electron Devices Meeting (IEDM) ◽

10.1109/iedm19573.2019.8993586 ◽

2019 ◽

Author(s):

Masaki Noguchi ◽

Junko Abe ◽

Yoshihiro Ogawa ◽

Seiji Nakagawa ◽

Hideshi Miyajima ◽

...

Keyword(s):

High Reliability

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Experimental demonstration of integrated magneto-electric and spin-orbit building blocks implementing energy-efficient logic

2019 IEEE International Electron Devices Meeting (IEDM) ◽

10.1109/iedm19573.2019.8993620 ◽

2019 ◽

Author(s):

Chia-Ching Lin ◽

Tanay Gosavi ◽

Dmitri Nikonov ◽

Yen-Lin Huang ◽

Bhagwati Prasad ◽

...

Keyword(s):

Energy Efficient ◽

Building Blocks ◽

Experimental Demonstration

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New insight into MOS gate stack formations on Ge and SiGe from thermodynamics, reaction kinetics and nanoscale engineering

2019 IEEE International Electron Devices Meeting (IEDM) ◽

10.1109/iedm19573.2019.8993522 ◽

2019 ◽

Author(s):

Akira Toriumi ◽

Tomonori Nishimura

Keyword(s):

Reaction Kinetics ◽

Mos Gate ◽

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First Direct Measurement of Sub-Nanosecond Polarization Switching in Ferroelectric Hafnium Zirconium Oxide

2019 IEEE International Electron Devices Meeting (IEDM) ◽

10.1109/iedm19573.2019.8993509 ◽

2019 ◽

Author(s):

X. Lyu ◽

M. Si ◽

P. R. Shrestha ◽

K. P. Cheung ◽

P. D. Ye

Keyword(s):

Direct Measurement ◽

Zirconium Oxide ◽

Polarization Switching

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Filamentary Statistical Evolution from Nano-Conducting Path to Switching-Filament for Oxide-RRAM in Memory Applications

2019 IEEE International Electron Devices Meeting (IEDM) ◽

10.1109/iedm19573.2019.8993494 ◽

2019 ◽

Author(s):

Ernest Wu ◽

Takashi Ando ◽

Youngseok Kim ◽

Ramachandran Muralidhar ◽

Eduard Cartier ◽

...

Keyword(s):

Conducting Path ◽

Memory Applications ◽

Statistical Evolution

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Millimeter scale thin film batteries for integrated high energy density storage

2019 IEEE International Electron Devices Meeting (IEDM) ◽

10.1109/iedm19573.2019.8993483 ◽

2019 ◽

Author(s):

S. Oukassi ◽

R. Salot ◽

A. Bazin ◽

C. Secouard ◽

I. Chevalier ◽

...

Keyword(s):

Thin Film ◽

Energy Density ◽

High Energy ◽

High Energy Density ◽

Thin Film Batteries

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Quantitative 3-D Model to Explain Large Single Trap Charge Variability in Vertical NAND Memory

2019 IEEE International Electron Devices Meeting (IEDM) ◽

10.1109/iedm19573.2019.8993552 ◽

2019 ◽

Author(s):

D. Verreck ◽

A. Furnemont ◽

A. Arreghini ◽

J.P. Bastos ◽

F. Schanovsky ◽

...

Keyword(s):

Trap Charge ◽

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