31st European Solid-State Device Research Conference
Latest Publications

TOTAL DOCUMENTS

121

(FIVE YEARS 0)

H-INDEX

(FIVE YEARS 0)

Published By IEEE

2914601018

Latest Documents Most Cited Documents Contributed Authors Related Sources Related Keywords

Compensation devices versus power MOS and high speed IGBT - a device physics based guideline for the application

31st European Solid-State Device Research Conference ◽

10.1109/essderc.2001.195205 ◽

2001 ◽

Cited By ~ 8

Author(s):

G. Deboy ◽

M. Purschel ◽

M. Schmitt ◽

A. Willmeroth

Keyword(s):

High Speed ◽

Device Physics

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Design of Wide MOSFETs on Re-Crystallized Polysilicon Film with Multigigahertz Cut-Off Frequency

31st European Solid-State Device Research Conference ◽

10.1109/essderc.2001.195255 ◽

2001 ◽

Author(s):

Sang Lam ◽

Hongmei Wang ◽

S. Jagar ◽

Mansun Chan

Keyword(s):

Polysilicon Film

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2D analysis of gate polydepletion in ultra short MOSFETs

31st European Solid-State Device Research Conference ◽

10.1109/essderc.2001.195237 ◽

2001 ◽

Cited By ~ 1

Author(s):

E. Josse ◽

T. Skotnicki

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A New Model for Threshold Voltage Mismatch Based on the Random Fluctuations of Dopant Number in the MOS Transistor Gate

31st European Solid-State Device Research Conference ◽

10.1109/essderc.2001.195260 ◽

2001 ◽

Cited By ~ 8

Author(s):

R. Difrenza ◽

P. Llinares ◽

G. Morin ◽

E. Granger ◽

G. Ghibaudo

Keyword(s):

Threshold Voltage ◽

New Model ◽

Mos Transistor ◽

Random Fluctuations

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Shallow Saturation and Fast Switching Characteristics of the Power BJT with Corrugated Base Junctions

31st European Solid-State Device Research Conference ◽

10.1109/essderc.2001.195250 ◽

2001 ◽

Cited By ~ 1

Author(s):

C. Park ◽

Kwyro Lee

Keyword(s):

Fast Switching ◽

Switching Characteristics

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Effects of Grain-Boundaries in Excimer-Laser Crystallized Poly-Si Thin-Film Transistors

31st European Solid-State Device Research Conference ◽

10.1109/essderc.2001.195305 ◽

2001 ◽

Cited By ~ 2

Author(s):

R. Ishihara

Keyword(s):

Thin Film ◽

Grain Boundaries ◽

Excimer Laser ◽

Thin Film Transistors ◽

Si Thin Film

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Stable and unstable dynamic avalanche in fast Silicon Power Diodes

31st European Solid-State Device Research Conference ◽

10.1109/essderc.2001.195251 ◽

2001 ◽

Cited By ~ 1

Author(s):

M. Domeij ◽

J. Lutz ◽

D. Silber

Keyword(s):

Power Diodes

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Carbon Implanted Halo for Super Halo Characteristic NFETs in Bulk and SOI

31st European Solid-State Device Research Conference ◽

10.1109/essderc.2001.195224 ◽

2001 ◽

Author(s):

J. Ellis-Monaghan ◽

Kam-Leung Lee ◽

Meikei Ieong ◽

I. Yang

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Welcome

31st European Solid-State Device Research Conference ◽

10.1109/essderc.2001.195193 ◽

2001 ◽

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92-GHz-Dynamic and 72-GHz-Static Frequency Dividers Using 5.4-ps-ECL Self-Aligned SEG SiGe HBTs

31st European Solid-State Device Research Conference ◽

10.1109/essderc.2001.195295 ◽

2001 ◽

Cited By ~ 4

Author(s):

K. Washio ◽

E. Ohue ◽

K. Oda ◽

R. Hayami ◽

M. Tanabe ◽

...

Keyword(s):

Frequency Dividers

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31st European Solid-State Device Research ConferenceLatest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Compensation devices versus power MOS and high speed IGBT - a device physics based guideline for the application

Design of Wide MOSFETs on Re-Crystallized Polysilicon Film with Multigigahertz Cut-Off Frequency

2D analysis of gate polydepletion in ultra short MOSFETs

A New Model for Threshold Voltage Mismatch Based on the Random Fluctuations of Dopant Number in the MOS Transistor Gate

Shallow Saturation and Fast Switching Characteristics of the Power BJT with Corrugated Base Junctions

Effects of Grain-Boundaries in Excimer-Laser Crystallized Poly-Si Thin-Film Transistors

Stable and unstable dynamic avalanche in fast Silicon Power Diodes

Carbon Implanted Halo for Super Halo Characteristic NFETs in Bulk and SOI

Welcome

92-GHz-Dynamic and 72-GHz-Static Frequency Dividers Using 5.4-ps-ECL Self-Aligned SEG SiGe HBTs

31st European Solid-State Device Research Conference
Latest Publications