A New Model for Threshold Voltage Mismatch Based on the Random Fluctuations of Dopant Number in the MOS Transistor Gate

2001 ◽  
Author(s):  
R. Difrenza ◽  
P. Llinares ◽  
G. Morin ◽  
E. Granger ◽  
G. Ghibaudo
Keyword(s):  
Threshold Voltage ◽  
New Model ◽  
Mos Transistor ◽  
Random Fluctuations

A new model for the current factor mismatch in the MOS transistor

2003 ◽  
Vol 47 (7) ◽  
pp. 1167-1171 ◽  
Author(s):  
R. Difrenza ◽  
P. Llinares ◽  
G. Ghibaudo
Keyword(s):  
New Model ◽  
Mos Transistor

A self-aligned, electrically separable double-gate mos transistor technology for dynamic threshold voltage application

2003 ◽  
Vol 50 (11) ◽  
pp. 2297-2300 ◽  
Author(s):  
Shengdong Zhang ◽  
Xinnan Lin ◽  
Ru Huang ◽  
Ruqi Han ◽  
Mansun Chan
Keyword(s):  
Threshold Voltage ◽  
Dynamic Threshold ◽  
Double Gate ◽  
Mos Transistor ◽  
Voltage Application

Study on a Single NFET Degradation After Circuit Modification With FIB

2002 ◽  
Author(s):  
Werner Lehner
Keyword(s):  
Threshold Voltage ◽  
State Of The Art ◽  
Active Area ◽  
Standard State ◽  
Mos Transistor

Abstract The use of FIB in circuit modification can generate huge influences on MOS transistor parameters. It is necessary to investigate and understand the effects that occur after Ga irradiation to evaluate the influence on the behaviour of the modified structures. In this paper we investigate influences on the threshold voltage of an n-FET MOS transistor in a standard, state of the art 0.17 µm DRAM technology, after FIB irradiation. In particular, the effect of varying the distance (vertical and horizontal) between the location of the FIB modification and the active area as well as the possibility of recovering the induced Vth shift has been characterized.

scholarly journals Focused Ion Beam Induced Effects on MOS Transistor Parameters

1999 ◽  
Author(s):  
Ann N. Campbell ◽  
Paiboon Tangyunyong ◽  
Jeffrey R. Jessing ◽  
Charles E. Hembree ◽  
Daniel M. Fleetwood ◽  
...  
Keyword(s):  
Dose Rate ◽  
Threshold Voltage ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Mos Transistors ◽  
Exposed Area ◽  
Mos Transistor ◽  
Metal Layers ◽  
Physical Dimensions ◽  
Exposure Conditions

Abstract We report on recent studies of the effects of 50 keV focused ion beam (FIB) exposure on MOS transistors. We demonstrate that the changes in transistor parameters (such as threshold voltage, Vt) are essentially the same for exposure to a Ga+ ion beam at 30 and 50 keV under the same exposure conditions. We characterize the effects of FIB exposure on test transistors fabricated in both 0.5 μm and 0.225 μm technologies from two different vendors. We report on the effectiveness of overlying metal layers in screening MOS transistors from FIB-induced damage and examine the importance of ion dose rate and the physical dimensions of the exposed area.

scholarly journals Magnetic sensitivity modeling of dual gate MOS transistor

2021 ◽  
Vol 24 (2) ◽  
pp. 1238
Author(s):  
Mohamed Kessi ◽  
Arezki Benfdila
Keyword(s):  
Magnetic Field ◽  
Threshold Voltage ◽  
Field Effect ◽  
Potential Distribution ◽  
Magnetic Field Effect ◽  
Oxide Semiconductor ◽  
Electron Velocity ◽  
Total Charge ◽  
Mos Transistor ◽  
The Magnetic Field

In this paper, the magnetic field effect on the carrier transport phenomenon in the double gate metal-oxide-semiconductor field-effect transistor (MOSFET) has been investigated. This is done by exploring the Lorentz force and the behavior of a semiconductor subjected to a constant magnetic field. The magnetic field modulates the electrons position and density as well as the potential distribution in the case of silicon tunnel tunneling field-effects (FETs). This modulation impacts the device electrical characteristics such as ON current (I<sub>ON</sub>), subthreshold leakage current (IOF), threshold voltage (V<sub>T</sub>), magneto-transconductance (g<sub>mm</sub>) and output magneto-conductance (gm<sub>DS</sub>). In addition, a hall voltage (V<sub>H</sub>) is induced and modulated by the magnetic field. It has been observed that this voltage influences the effective applied gate voltage. It has been observed that the threshold voltage variations induced by the magnetic field is of paramount importance and affects the device switching properties both speed and power dissipation, noted that the threshold voltage VT and (Ion/Iof) ratio are reduced by 10<sup>-3</sup>V and 10<sup>2</sup> for a magnetic field of ±6 and ±5.5 Tesla, respectively. We have simulated the different behavior in the channel, mainly doping concentration, potential distribution, conduction and valence bands, total current density, total charge density, electric field, electron mobility, and electron velocity.

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