Stable and unstable dynamic avalanche in fast Silicon Power Diodes

2001 ◽  
Author(s):  
M. Domeij ◽  
J. Lutz ◽  
D. Silber
Keyword(s):  
Power Diodes

scholarly journals A study on free-standing 3C-SiC bipolar power diodes

2021 ◽  
Vol 118 (24) ◽  
pp. 242101
Author(s):  
Fan Li ◽  
Arne Benjamin Renz ◽  
Amador Pérez-Tomás ◽  
Vishal Shah ◽  
Peter Gammon ◽  
...  
Keyword(s):  
Free Standing ◽  
Power Diodes

Hybrid simulation of electrode plasmas in high-power diodes

2009 ◽  
Vol 16 (12) ◽  
pp. 123102 ◽  
Author(s):  
Dale R. Welch ◽  
David V. Rose ◽  
Nichelle Bruner ◽  
Robert E. Clark ◽  
Bryan V. Oliver ◽  
...  
Keyword(s):  
High Power ◽  
Hybrid Simulation ◽  
Power Diodes

Single event burnout in power diodes: Mechanisms and models

2006 ◽  
Vol 46 (2-4) ◽  
pp. 317-325 ◽  
Author(s):  
A.M. Albadri ◽  
R.D. Schrimpf ◽  
K.F. Galloway ◽  
D.G. Walker
Keyword(s):  
Single Event ◽  
Power Diodes

Point Defects in 4H-SiC Epilayers Introduced by 4.5 MeV Electron Irradiation and their Effect on Power JBS SiC Diode Characteristics

2013 ◽  
Vol 205-206 ◽  
pp. 451-456 ◽  
Author(s):  
Pavel Hazdra ◽  
Vít Záhlava ◽  
Jan Vobecký
Keyword(s):  
Electron Irradiation ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Radiation Defects ◽  
Electrical Parameters ◽  
Power Diodes ◽  
Defect Centers ◽  
Measurement Results ◽  
Transient Spectroscopy ◽  
State Resistance

Electronic properties of radiation damage produced in 4H-SiC by electron irradiation and its effect on electrical parameters of Junction Barrier Schottky (JBS) diodes were investigated. 4H‑SiC N‑epilayers, which formed the low‑doped N-base of JBS power diodes, were irradiated with 4.5 MeV electrons with fluences ranging from 1.5x1014 to 5x1015 cm-2. Radiation defects were then characterized by capacitance deep-level transient spectroscopy and C-V measurement. Results show that electron irradiation introduces two defect centers giving rise to acceptor levels at EC‑0.39 and EC‑0.60 eV. Introduction rate of these centers is 0.24 and 0.65 cm‑1, respectively. These radiation defects have a negligible effect on blocking and dynamic characteristics of irradiated diodes, however, the acceptor character of introduced deep levels and their high introduction rates deteriorate diode’s ON-state resistance already at fluences higher than 1x1015 cm‑2.

Silicon Carbide Power Diodes as Radiation Detectors

2006 ◽  
pp. 1465-1468
Author(s):  
Bernard F. Phlips ◽  
Karl D. Hobart ◽  
Francis J. Kub ◽  
Robert E. Stahlbush ◽  
Mrinal K. Das ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Radiation Detectors ◽  
Power Diodes
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