Design of Wide MOSFETs on Re-Crystallized Polysilicon Film with Multigigahertz Cut-Off Frequency

2001 ◽  
Author(s):  
Sang Lam ◽  
Hongmei Wang ◽  
S. Jagar ◽  
Mansun Chan
Keyword(s):  
Polysilicon Film

Polysilicon Thin Film Transistors

1990 ◽  
Vol 182 ◽  
Author(s):  
Ichio Yudasaka ◽  
Hiroyuki Ohshima
Keyword(s):  
Thin Film ◽  
Thermal Oxidation ◽  
Thin Film Transistors ◽  
Laser Annealing ◽  
Solid Phase ◽  
Solid Phase Crystallization ◽  
Practical Applications ◽  
Polysilicon Film ◽  
Alternative Technologies ◽  
Low Temperature Processing

AbstractPolysilicon thin film transistors are now in mass production. Key factors of the success are thinner polysilicon film and thermal oxidation. Practical applications of polysilicon thin film transistors have been limited, however, because of high temperature processing. Alternative technologies to thermal oxidation are very low pressure deposition, solid-phase crystallization, laser-annealing and hydrogenation. These technologies are compatible with low temperature processing and will contribute to the advance of polysilicon thin film transistors in the future.

scholarly journals Stochastic Mechanical Characterization of Polysilicon MEMS: A Deep Learning Approach

Proceedings ◽  
2019 ◽  
Vol 42 (1) ◽  
pp. 8
Author(s):  
José Pablo Quesada Molina ◽  
Luca Rosafalco ◽  
Stefano Mariani
Keyword(s):  
Deep Learning ◽  
Learning Strategies ◽  
Mechanical Response ◽  
Learning Strategy ◽  
Monte Carlo Analysis ◽  
Small Samples ◽  
Micro Electro Mechanical Systems ◽  
Polysilicon Film ◽  
Polysilicon Films

Deep Learning strategies recently emerged as powerful tools for the characterization of heterogeneous materials. In this work, we discuss an approach for the characterization of the mechanical response of polysilicon films that typically constitute the movable structures of micro-electro-mechanical systems (MEMS). A dataset of microstructures is digitally generated and a neural network is trained to provide the appropriate scattering in the values of the overall stiffness (in terms of the Young’s modulus) of the grain aggregate. Since results are framed within a stochastic procedure, the aim of the learning strategy is not to accurately reproduce the microstructure-informed response of the polysilicon film, but instead to provide a fast tool to be used at the device level for Monte Carlo analysis of the relevant performance indices. Accuracy of the proposed approach is assessed for very small samples of the polycrystalline aggregate to check if size effects are correctly captured.

Improving within-run uniformity of polysilicon film

1996 ◽  
Author(s):  
Judith B. Barker
Keyword(s):  
Polysilicon Film

Grain Quality Enhancement of Nickel-Crystallized Polysilicon Film in Quantum-Wire-Like Structures

2001 ◽  
Vol 686 ◽  
Author(s):  
Hongmei Wang ◽  
Singh Jagar ◽  
N. Zhan ◽  
C. F. Cheng ◽  
M. C. Poon ◽  
...  
Keyword(s):  
High Temperature ◽  
Quantum Wire ◽  
Grain Quality ◽  
Small Dimension ◽  
Deep Submicron ◽  
Current Drive ◽  
Silicon On Insulator ◽  
Polysilicon Film ◽  
Crystallization Procedure ◽  
Lateral Crystallization

AbstractMethods for forming high quality re-crystallizing polysilicon films are being actively studied due to their ability to provide significant improvement to polysilicon Thin-Film-Transistors (TFT). Recently, a simple Metal-Induced-Lateral-Crystallization (MILC) method with nickel, together with high temperature annealing, can result in single crystal like polysilicon film [1]. TFTs fabricated on this so-called Large-grain Silicon-On-Insulator (LPSOI) can achieve SOI MOSFET performance especially for making small dimension devices. This paper reports that the polysilicon grain quality can be further enhanced by crystallizing the polysilicon film into the shape of long-wire.The crystallization procedure started with a regular Nickel-Induced-Lateral-Crystallization (NILC) process at 560 °C as described in [1]. The film was then etched into narrow wires, which were parallel to the direction of nickel propagation. The NILC second anneal at 900 °C was then performed on these silicon wire. Through surface energy anisotropy stimulated grain expansion in the NILC high-temperature second annealing, enhanced grain quality beyond that on planar polysilicon film.Transistor fabricated on these wire is similar to gate-all-around structure as that of FinFET [2]. Much better scalability to the deep submicron region was observed for these wire transistors than regular planar TFTs formed on the same NILC film. Experimental results showed that a wide transistor formed by the parallel combination of the quantum wire transistors much higher current drive than a TFT on the same NILC film with equivalent width.

Thermal-induced normal grain growth mechanism in LPCVD polysilicon film

2005 ◽  
Vol 8 (4) ◽  
pp. 476-482 ◽  
Author(s):  
J. Akhtar ◽  
S.K. Lamichhane ◽  
P. Sen
Keyword(s):  
Grain Growth ◽  
Growth Mechanism ◽  
Polysilicon Film

Electrical Properties of Polycrystalline-Silicon Thin Films for VLSI

1986 ◽  
Vol 71 ◽  
Author(s):  
T I Kamins
Keyword(s):  
Electrical Properties ◽  
Integrated Circuits ◽  
Single Crystal ◽  
Grain Boundaries ◽  
Polycrystalline Silicon ◽  
Crystalline Silicon ◽  
Single Crystal Silicon ◽  
Active Regions ◽  
Crystal Silicon ◽  
Polysilicon Film

AbstractThe electrical properties of polycrystalline silicon differ from those of single-crystal silicon because of the effect of grain boundaries. At low and moderate dopant concentrations, dopant segregation to and carrier trapping at grain boundaries reduces the conductivity of polysilicon markedly compared to that of similarly doped single-crystal silicon. Because the properties of moderately doped polysilicon are limited by grain boundaries, modifying the carrier traps at the grain boundaries by introducing hydrogen to saturate dangling bonds improves the conductivity of polysilicon and allows fabrication of moderate-quality transistors with their active regions in the polycrystalline films. Removing the grain boundaries by melting and recrystallization allows fabrication of high-quality transistors. When polysilicon is used as an interconnecting layer in integrated circuits, its limited conductivity can degrade circuit performance. At high dopant concentrations, the active carrier concentration is limited by the solid solubility of the dopant species in crystalline silicon. The current through oxide grown on polysilicon can be markedly higher than that on oxide of similar thickness grown on singlecrystal silicon because the rough surface of a polysilicon film enhances the local electric field in oxide thermally grown on it. Consequently, the structure must be controlled to obtain reproducible conduction through the oxide. The differences in the behavior of polysilicon and single-crystal silicon and the limited electrical conductivity in polysilicon are having a greater impact on integrated circuits as the feature size decreases and the number of devices on a chip increases in the VLSI era.

Metallization introduced corrosion and parylene protection of surface micromachined polysilicon film with submicron capacitive gap

2012 ◽  
Vol 97 ◽  
pp. 20-25 ◽  
Author(s):  
Yiming Zhang ◽  
Yunda Wang ◽  
Ming Cai ◽  
Ying Wang ◽  
Yilong Hao ◽  
...  
Keyword(s):  
Polysilicon Film

scholarly journals Tunnel oxide prepared by thermal oxidation of thin polysilicon film on silicon (TOPS)

1993 ◽  
Vol 14 (8) ◽  
pp. 379-381 ◽  
Author(s):  
S.L. Wu ◽  
C.L. Lee ◽  
T.F. Lei
Keyword(s):  
Thermal Oxidation ◽  
Polysilicon Film
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