Proceedings of Technical Program of 2012 VLSI Technology, System and Application
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79

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Published By IEEE

9781457720840, 9781457720833, 9781457720826

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Computer architecture for die stacking

Proceedings of Technical Program of 2012 VLSI Technology, System and Application ◽

10.1109/vlsi-tsa.2012.6210108 ◽

2012 ◽

Author(s):

Gabriel H. Loh

Keyword(s):

Computer Architecture ◽

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Welcome from the general chairs

Proceedings of Technical Program of 2012 VLSI Technology, System and Application ◽

10.1109/vlsi-tsa.2012.6210135 ◽

2012 ◽

Author(s):

Michel Brillouet ◽

Shyh-Jye Jou ◽

Patrick Yue

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Impact of 45° rotated substrate on UTBOX FDSOI high-k metal gate technology

Proceedings of Technical Program of 2012 VLSI Technology, System and Application ◽

10.1109/vlsi-tsa.2012.6210158 ◽

2012 ◽

Author(s):

I. Ben Akkez ◽

C. Fenouillet-Beranger ◽

A. Cros ◽

P. Perreau ◽

S. Haendler ◽

...

Keyword(s):

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Modeling and tuning the filament properties in RRAM metal oxide stacks for optimized stable cycling

Proceedings of Technical Program of 2012 VLSI Technology, System and Application ◽

10.1109/vlsi-tsa.2012.6210101 ◽

2012 ◽

Author(s):

R. Degraeve ◽

L. Goux ◽

S. Clima ◽

B. Govoreanu ◽

Y. Y. Chen ◽

...

Keyword(s):

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Advanced channel and contact technologies for future CMOS devices

Proceedings of Technical Program of 2012 VLSI Technology, System and Application ◽

10.1109/vlsi-tsa.2012.6210144 ◽

2012 ◽

Author(s):

Yee-Chia Yeo

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Embedded Metal Source/Drain (eMSD) for series resistance reduction in In0.53Ga0.47As n-channel Ultra-Thin Body Field-Effect Transistor (UTB-FET)

Proceedings of Technical Program of 2012 VLSI Technology, System and Application ◽

10.1109/vlsi-tsa.2012.6210150 ◽

2012 ◽

Author(s):

S. Subramanian ◽

I. Ivana ◽

Yee-Chia Yeo

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Series Resistance ◽

Thin Body ◽

Metal Source ◽

Resistance Reduction ◽

Effect Transistor

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Author index

Proceedings of Technical Program of 2012 VLSI Technology, System and Application ◽

10.1109/vlsi-tsa.2012.6210134 ◽

2012 ◽

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Electrical characterization and reliability investigations of Cu TSVs with wafer-level Cu/Sn-BCB hybrid bonding

Proceedings of Technical Program of 2012 VLSI Technology, System and Application ◽

10.1109/vlsi-tsa.2012.6210175 ◽

2012 ◽

Author(s):

Y. J. Chang ◽

C. T. Ko ◽

Z. C. Hsiao ◽

T. H. Yu ◽

Y. H. Chen ◽

...

Keyword(s):

Electrical Characterization ◽

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Simple FinFET gate doping technique for dipole-engineered Vt tuning and CET scaling

Proceedings of Technical Program of 2012 VLSI Technology, System and Application ◽

10.1109/vlsi-tsa.2012.6210156 ◽

2012 ◽

Author(s):

T. Ngai ◽

C. Hobbs ◽

D. Veksler ◽

K. Matthews ◽

I. Ok ◽

...

Keyword(s):

Doping Technique

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PBTI improvement in gate last HfO2 gate dielectric nMOSFET due to Zr incorporation

Proceedings of Technical Program of 2012 VLSI Technology, System and Application ◽

10.1109/vlsi-tsa.2012.6210161 ◽

2012 ◽

Author(s):

S. Deora ◽

G. Bersuker ◽

C. D. Young ◽

J. Huang ◽

K. Matthews ◽

...

Keyword(s):

Gate Dielectric

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