1999 GaAs Reliability Workshop. Proceedings (Cat. No.00TH8459)
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ESD sensitivity study of various diode protection circuits implemented in a production 1 μm GaAs HBT technology

2003 ◽  
Author(s):  
F.M. Yamada ◽  
A.K. Oki ◽  
E.N. Kaneshiro ◽  
M.D. Lammert ◽  
A.L. Gutierrez-Aitken ◽  
...  
Keyword(s):  
Sensitivity Study ◽  
Protection Circuits

Reliability performance of components and ICs from a production 1 μm GaAs HBT process

2003 ◽  
Author(s):  
F.M. Yamada ◽  
A.K. Oki ◽  
D.C. Streit ◽  
B.L. Hikin ◽  
E.N. Kaneshiro ◽  
...  
Keyword(s):  
Reliability Performance

The effect of gate and recess scaling on the gate-drain breakdown and hot-electron reliability of AlGaAs/GaAs power HFETs

2003 ◽  
Author(s):  
R. Menozzi ◽  
D. Dieci ◽  
G. Sozzi ◽  
T. Tomasi ◽  
C. Lanzieri
Keyword(s):  
Hot Electron

Automated WLR testing of HBT's

2003 ◽  
Author(s):  
E. Sabin ◽  
S. Scarpulla ◽  
S. Dacus

Reliability testing of 0.1 μm GaAs pseudomorphic HEMT MMIC amplifiers

2003 ◽  
Author(s):  
D.L. Leung ◽  
Y.C. Chou ◽  
C.S. Wu ◽  
R. Kono ◽  
J. Scarpulla ◽  
...  
Keyword(s):  
Reliability Testing

Investigation on GaAs power MESFETs submitted to RF life-test by LF noise and drain current transient analysis

2003 ◽  
Author(s):  
N. Saysset-Malbert ◽  
B. Lambert ◽  
C. Maneux ◽  
N. Labat ◽  
A. Touboul ◽  
...  
Keyword(s):  
Transient Analysis ◽  
Drain Current ◽  
Current Transient ◽  
Life Test
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