2018 18th International Workshop on Junction Technology (IWJT)
Latest Publications

TOTAL DOCUMENTS

(FIVE YEARS 0)

H-INDEX

(FIVE YEARS 0)

Published By IEEE

9781538645116, 9781538645130

Latest Documents Most Cited Documents Contributed Authors Related Sources Related Keywords

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2018 18th International Workshop on Junction Technology (IWJT) ◽

10.1109/iwjt.2018.8330277 ◽

2018 ◽

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Characterizing junction profiles in Ge photodetectors using scanning capacitance microscopy (SCM) and electron holography

2018 18th International Workshop on Junction Technology (IWJT) ◽

10.1109/iwjt.2018.8330282 ◽

2018 ◽

Cited By ~ 1

Author(s):

J. N. Nxumalo ◽

Y.Y. Wang ◽

M. Iwatake ◽

C. Molella ◽

A. Katnani ◽

...

Keyword(s):

Electron Holography ◽

Scanning Capacitance Microscopy

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Interfacial passivation by LiF or PbF2 for high efficiency perovskite solar cell

2018 18th International Workshop on Junction Technology (IWJT) ◽

10.1109/iwjt.2018.8330304 ◽

2018 ◽

Author(s):

Yiqiang Zhan

Keyword(s):

Solar Cell ◽

High Efficiency ◽

Perovskite Solar Cell

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Highly selective etch of silicon dioxide with tungsten hard mask deposited by PVD process

2018 18th International Workshop on Junction Technology (IWJT) ◽

10.1109/iwjt.2018.8330311 ◽

2018 ◽

Author(s):

Yuanhui Fang ◽

Jian Zhang ◽

Yu-Long Jiang

Keyword(s):

Silicon Dioxide ◽

Hard Mask ◽

Selective Etch

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[Title page]

2018 18th International Workshop on Junction Technology (IWJT) ◽

10.1109/iwjt.2018.8330270 ◽

2018 ◽

Keyword(s):

Title Page

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Effect of platinum interlayer on the thermal stability improvement of nickel stanogermanide

2018 18th International Workshop on Junction Technology (IWJT) ◽

10.1109/iwjt.2018.8330300 ◽

2018 ◽

Author(s):

Weijun Wan ◽

Wei Ren ◽

Xiaoran Meng ◽

Yunxia Ping ◽

Xing Wei ◽

...

Keyword(s):

Thermal Stability

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H2 PLAD hydrogenation process on 3D NAND array poly-Si access devices

2018 18th International Workshop on Junction Technology (IWJT) ◽

10.1109/iwjt.2018.8330293 ◽

2018 ◽

Cited By ~ 1

Author(s):

Shu Qin

Keyword(s):

Hydrogenation Process

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Advanced implant application for 7nm and beyond

2018 18th International Workshop on Junction Technology (IWJT) ◽

10.1109/iwjt.2018.8330278 ◽

2018 ◽

Author(s):

Wei Zou ◽

Kyu-Ha Shim ◽

Todd Henry

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Photodetector based on silicon-on-insulator with high responsivity

2018 18th International Workshop on Junction Technology (IWJT) ◽

10.1109/iwjt.2018.8330305 ◽

2018 ◽

Cited By ~ 1

Author(s):

X Y. Cao ◽

H B. Liu ◽

J N. Deng ◽

W S. Lin ◽

J. Wan

Keyword(s):

Silicon On Insulator ◽

High Responsivity

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Monolayer doping and other strategies in high surface-to-volume ratio silicon devices

2018 18th International Workshop on Junction Technology (IWJT) ◽

10.1109/iwjt.2018.8330294 ◽

2018 ◽

Author(s):

Ray Duffy ◽

Noel Kennedy ◽

Gioele Mirabelli ◽

Emmanuele Galluccio ◽

Paul K. Hurley ◽

...

Keyword(s):

High Surface ◽

Volume Ratio ◽

Silicon Devices

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2018 18th International Workshop on Junction Technology (IWJT)Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

[Blank page]

Characterizing junction profiles in Ge photodetectors using scanning capacitance microscopy (SCM) and electron holography

Interfacial passivation by LiF or PbF2 for high efficiency perovskite solar cell

Highly selective etch of silicon dioxide with tungsten hard mask deposited by PVD process

[Title page]

Effect of platinum interlayer on the thermal stability improvement of nickel stanogermanide

H2 PLAD hydrogenation process on 3D NAND array poly-Si access devices

Advanced implant application for 7nm and beyond

Photodetector based on silicon-on-insulator with high responsivity

Monolayer doping and other strategies in high surface-to-volume ratio silicon devices

2018 18th International Workshop on Junction Technology (IWJT)
Latest Publications