2005 International Conference On Simulation of Semiconductor Processes and Devices
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TOTAL DOCUMENTS

91

(FIVE YEARS 0)

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8

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Published By IEEE

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Latest Documents Most Cited Documents Contributed Authors Related Sources Related Keywords

Three-Dimensional Simulation of Stress Dependent Thermal Oxidation

2005 International Conference On Simulation of Semiconductor Processes and Devices ◽

10.1109/sispad.2005.201503 ◽

2005 ◽

Author(s):

Ch. Hollauer ◽

H. Ceric ◽

S. Selberherr

Keyword(s):

Thermal Oxidation ◽

Three Dimensional ◽

Dimensional Simulation ◽

Stress Dependent

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Phenomenological model for "stress memorization" effect from a capped-poly process

2005 International Conference On Simulation of Semiconductor Processes and Devices ◽

10.1109/sispad.2005.201492 ◽

2005 ◽

Author(s):

L.S. Adam ◽

C. Chiu ◽

M. Huang ◽

X. Wang ◽

Y. Wang ◽

...

Keyword(s):

Phenomenological Model

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Three Dimensional CMOS Image Sensor Cell Simulation and Optimization

2005 International Conference On Simulation of Semiconductor Processes and Devices ◽

10.1109/sispad.2005.201483 ◽

2005 ◽

Author(s):

Kee-Hyun Paik ◽

Seok-Ha Lee ◽

Jeong-Ho Lyu ◽

Keun-Ho Lee ◽

Young-Kwan Park ◽

...

Keyword(s):

Three Dimensional ◽

Cmos Image Sensor ◽

Image Sensor ◽

Simulation And Optimization ◽

Sensor Cell ◽

Cell Simulation

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Monte-Carlo Simulations of Performance Scaling in Strained-Si nMOSFETs

2005 International Conference On Simulation of Semiconductor Processes and Devices ◽

10.1109/sispad.2005.201532 ◽

2005 ◽

Author(s):

A. Kumar ◽

M.V. Fischetti ◽

S.E. Laux

Keyword(s):

Monte Carlo ◽

Monte Carlo Simulations ◽

Strained Si ◽

Performance Scaling

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Copyright page

2005 International Conference On Simulation of Semiconductor Processes and Devices ◽

10.1109/sispad.2005.201454 ◽

2005 ◽

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Atomistic Modeling for Retardation of Boron Diffusion and Dominant BmInClusters in Pre-doped Silicon

2005 International Conference On Simulation of Semiconductor Processes and Devices ◽

10.1109/sispad.2005.201475 ◽

2005 ◽

Author(s):

Jae-Hyun Yoo ◽

Taeyoung Won ◽

Chi-Ok Hwang ◽

Byeong-Jun Kim

Keyword(s):

Atomistic Modeling ◽

Boron Diffusion ◽

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Intrinsic parameter fluctuations in MOSFETs due to structural non-uniformity of high-/spl kappa/ gate stack materials

2005 International Conference On Simulation of Semiconductor Processes and Devices ◽

10.1109/sispad.2005.201464 ◽

2005 ◽

Author(s):

A.R. Brown ◽

J.R. Watling ◽

A. Asenov ◽

G. Bersuker ◽

P. Zeitzoff

Keyword(s):

Intrinsic Parameter ◽

Intrinsic Parameter Fluctuations

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Physics and Performance of Phase Change Memories

2005 International Conference On Simulation of Semiconductor Processes and Devices ◽

10.1109/sispad.2005.201524 ◽

2005 ◽

Author(s):

A.L. Lacaita

Keyword(s):

Phase Change ◽

And Performance

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One-Dimensional Corrected Drift-Diffusion Model: McKelvey's Method Extended with Accelerated-Multi-Flux

2005 International Conference On Simulation of Semiconductor Processes and Devices ◽

10.1109/sispad.2005.201498 ◽

2005 ◽

Author(s):

M. Hogyoku

Keyword(s):

Diffusion Model ◽

Drift Diffusion Model ◽

Drift Diffusion ◽

One Dimensional

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Device Behavior Modeling for Carbon Nanotube Silicon-On-Insulator MOSFETs

2005 International Conference On Simulation of Semiconductor Processes and Devices ◽

10.1109/sispad.2005.201470 ◽

2005 ◽

Author(s):

A. Akturk ◽

G. Pennington ◽

N. Goldsman

Keyword(s):

Carbon Nanotube ◽

Silicon On Insulator ◽

Behavior Modeling

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