intrinsic parameter fluctuations Recently Published Documents

Author(s):

Yunxiang Yang ◽

Gang Du ◽

Ruqi Han ◽

Xiaoyan Liu

Keyword(s):

Metal Oxide ◽

Simulation Study ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Intrinsic Parameter ◽

Simulation Study of Intrinsic Parameter Fluctuations in Variable-Body-Factor Silicon-on-Thin-Box Metal Oxide Semiconductor Field Effect Transistors

Japanese Journal of Applied Physics ◽

10.7567/jjap.50.04dc11 ◽

2011 ◽

Vol 50 (4S) ◽

pp. 04DC11

Author(s):

Yunxiang Yang ◽

Gang Du ◽

Ruqi Han ◽

Xiaoyan Liu

Keyword(s):

Metal Oxide ◽

Simulation Study ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Intrinsic Parameter ◽

Benchmarking statistical compact modeling strategies for capturing device intrinsic parameter fluctuations in BSIM4 and PSP

IEEE Design & Test of Computers ◽

10.1109/mdt.2010.2 ◽

2011 ◽

Author(s):

Binjie Cheng ◽

Daryoosh Dideban ◽

Negin Moezi ◽

Campbell Millar ◽

Gareth Roy ◽

...

Keyword(s):

Compact Modeling ◽

Intrinsic Parameter ◽

Effect of intrinsic-parameter fluctuations on 16-nm-gate CMOS and current mirror circuit

10th IEEE International Conference on Nanotechnology ◽

10.1109/nano.2010.5697825 ◽

2010 ◽

Author(s):

Chun-Yen Yiu ◽

Yiming Li ◽

Ming-Hung Han ◽

Kuo-Fu Lee ◽

Thet-Thet Khaing ◽

...

Keyword(s):

Current Mirror ◽

Intrinsic Parameter ◽

Intrinsic parameter fluctuations on current mirror circuit with different aspect ratio of 16-nm multi-gate MOSFET

2010 Silicon Nanoelectronics Workshop ◽

10.1109/snw.2010.5562570 ◽

2010 ◽

Author(s):

Hui-Wen Cheng ◽

Chun-Yen Yiu ◽

Thet-Thet Khaing ◽

Yiming Li

Keyword(s):

Aspect Ratio ◽

Current Mirror ◽

Intrinsic Parameter ◽

Statistical variability in FinFET devices with intrinsic parameter fluctuations

Microelectronics Reliability ◽

10.1016/j.microrel.2010.01.041 ◽

2010 ◽

Vol 50 (5) ◽

pp. 635-638 ◽

Cited By ~ 8

Author(s):

Chih-Hong Hwang ◽

Yiming Li ◽

Ming-Hung Han

Keyword(s):

Intrinsic Parameter ◽

Intrinsic Parameter Fluctuations ◽

Statistical Variability

The impact of high-frequency characteristics induced by intrinsic parameter fluctuations in nano-MOSFET device and circuit

Microelectronics Reliability ◽

10.1016/j.microrel.2010.01.048 ◽

2010 ◽

Vol 50 (5) ◽

pp. 657-661 ◽

Cited By ~ 9

Author(s):

Ming-Hung Han ◽

Yiming Li ◽

Chih-Hong Hwang

Keyword(s):

High Frequency ◽

Frequency Characteristics ◽

Intrinsic Parameter ◽

The Impact ◽

Intrinsic Parameter Fluctuations ◽

Nano Mosfet

Capturing intrinsic parameter fluctuations using the PSP compact model

2010 Design, Automation & Test in Europe Conference & Exhibition (DATE 2010) ◽

10.1109/date.2010.5457123 ◽

2010 ◽

Author(s):

B Cheng ◽

D Dideban ◽

N Moezi ◽

C Millar ◽

G Roy ◽

...

Keyword(s):

Compact Model ◽

Intrinsic Parameter ◽

Simulation of characteristic variation in 16 nm gate FinFET devices due to intrinsic parameter fluctuations

Nanotechnology ◽

10.1088/0957-4484/21/9/095203 ◽

2010 ◽

Vol 21 (9) ◽

pp. 095203 ◽

Cited By ~ 18

Author(s):

Yiming Li ◽

Chih-Hong Hwang ◽

Ming-Hung Han

Keyword(s):

Intrinsic Parameter ◽

Characteristic Variation ◽

Impact of intrinsic parameter fluctuations on the performance of In0.75Ga0.25As implant free MOSFETs

Semiconductor Science and Technology ◽

10.1088/0268-1242/24/5/055011 ◽

2009 ◽

Vol 24 (5) ◽

pp. 055011 ◽

Cited By ~ 2

Author(s):

N Seoane ◽

A Garcia-Loureiro ◽

M Aldegunde ◽

K Kalna ◽

A Asenov

Keyword(s):

Intrinsic Parameter ◽