Microscopy of Semiconducting Materials, 1983
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77

(FIVE YEARS 77)

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Published By CRC Press

9781003069614

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Design of a high efficiency secondary electron collector

Microscopy of Semiconducting Materials, 1983 ◽

10.1201/9781003069614-65 ◽

2020 ◽

pp. 433-438

Author(s):

D W Ranasinghe ◽

A Khursheed

Keyword(s):

Secondary Electron ◽

High Efficiency

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Optical stimulation of semiconducting devices in the SEM

Microscopy of Semiconducting Materials, 1983 ◽

10.1201/9781003069614-60 ◽

2020 ◽

pp. 399-406

Author(s):

E F Maher ◽

P J Howard

Keyword(s):

Optical Stimulation ◽

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Measurement of grading in heteroepitaxial layers

Microscopy of Semiconducting Materials, 1983 ◽

10.1201/9781003069614-55 ◽

2020 ◽

pp. 365-370

Author(s):

M A G Halliwell ◽

J Juler ◽

A G Norman

Keyword(s):

Heteroepitaxial Layers

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Impurity drag on climbing misfit dislocations in phosphorus-implanted (001) silicon

Microscopy of Semiconducting Materials, 1983 ◽

10.1201/9781003069614-54 ◽

2020 ◽

pp. 359-364

Author(s):

M P A Viegeres ◽

C W T Bulle-Lieuwma ◽

W J Bartels

Keyword(s):

Misfit Dislocations ◽

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SEM CL assessment of minority carrier lifetime in silicon

Microscopy of Semiconducting Materials, 1983 ◽

10.1201/9781003069614-49 ◽

2020 ◽

pp. 327-332

Author(s):

S Myhajlenko ◽

S M Davidson ◽

B Hamilton

Keyword(s):

Carrier Lifetime ◽

Minority Carrier ◽

Minority Carrier Lifetime

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TEM studies of and silicon slices implanted with B+ and BF 2 + ions after annealing and oxidation

Microscopy of Semiconducting Materials, 1983 ◽

10.1201/9781003069614-36 ◽

2020 ◽

pp. 235-240

Author(s):

M I J Beale ◽

G R Booker

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MeV ion backscattering spectrometry applied to the analysis of beam processed semiconductors

Microscopy of Semiconducting Materials, 1983 ◽

10.1201/9781003069614-24 ◽

2020 ◽

pp. 157-166

Author(s):

S S Lau

Keyword(s):

Ion Backscattering

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The motion of charged dislocations in AIIBVI semiconductors

Microscopy of Semiconducting Materials, 1983 ◽

10.1201/9781003069614-2 ◽

2020 ◽

pp. 11-20

Author(s):

Yu A Ossipyan

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High resolution TEM study of Al–Si 1%/Si interface

Microscopy of Semiconducting Materials, 1983 ◽

10.1201/9781003069614-15 ◽

2020 ◽

pp. 95-102

Author(s):

C D’Anterroches

Keyword(s):

High Resolution ◽

High Resolution Tem

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Thermally induced micro-defects in CZ silicon: a high resolution electron microscopy study

Microscopy of Semiconducting Materials, 1983 ◽

10.1201/9781003069614-10 ◽

2020 ◽

pp. 65-70

Author(s):

F A Ponce ◽

S Hahn ◽

T Yamashita ◽

M Scott ◽

J R Carruthers

Keyword(s):

Electron Microscopy ◽

High Resolution ◽

High Resolution Electron Microscopy ◽

Microscopy Study ◽

Electron Microscopy Study ◽

Thermally Induced ◽

Resolution Electron

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