MeV ion backscattering spectrometry applied to the analysis of beam processed semiconductors

AbstractIt has been demonstrated in the literature that amorphous Si (or Ge) can be transported across a metal layer and grown epitaxially on Si(Ge) single crystal substrates in the solid phase. The objective of this study is to investigate if amorphous SixGe1−x mixtures can be transported uniformly across a medium and grown epitaxially on single crystal substrates without phase separation. The samples were prepared by e-beam evaporation of thin Pd films onto Si<100> substrates, followed by co-evaporation of SixGe1−x alloyed films (0<x<1) without breaking vacuum. The samples were anneaie in vacuum at 300°C to form a Pd silicide-germanide layer at the interface, then at 500°C for transport of the alloyed layer across the Pd silicide-germanide layer and subsequent epitaxial growth on Si substrate. The samples were investigated by x-ray diffraction and by MeV ion backscattering and channeling. The results show the alloyed film transports uniformly with no phase separation detected. The channeling result shows the grown alloyed layer is epitaxial with some Pd trapped in the layer. This simple technique is potentially useful for forming lattice-matched non-alloyed ohmic contacts on III–V ternary and quaternary compounds.

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Ion backscattering study of ultra-thin oxides: Al2O3 and AlHfOx films on Si

Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ◽

10.1016/j.nimb.2005.07.045 ◽

2005 ◽

Vol 241 (1-4) ◽

pp. 377-381 ◽

Cited By ~ 1

Author(s):

Leszek S. Wielunski ◽

Yves Chabal ◽

Margareta Paunescu ◽

M.-T. Ho ◽

Rhett Brewer ◽

...

Keyword(s):

Ion Backscattering

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The Use of BaF2 Buffer Layers for the Sputter-Deposition of Ticabacuo Thin-Film Superconductors

MRS Proceedings ◽

10.1557/proc-169-671 ◽

1989 ◽

Vol 169 ◽

Author(s):

K.M. Hubbard ◽

P.N. Arendt ◽

D.R. Brown ◽

D.W. Cooke ◽

N.E. Elliott ◽

...

Keyword(s):

Thin Film ◽

Thin Films ◽

Sputter Deposition ◽

Buffer Layers ◽

X Ray Diffraction ◽

Dc Magnetron Sputtering ◽

X Ray ◽

Film Substrate ◽

Ion Backscattering ◽

Scanning Electron

AbstractThin films of the Tl‐based superconductors often have relatively poor properties because of film/substrate interdiffusion which occurs during the anneal. We have therefore investigated the use of BaF2 as a diffusion barrier. TICaBaCuO thin films were deposited by dc magnetron sputtering onto MgO <100> substrates, both with and without an evaporation‐deposited BaF2 buffer layer, and post‐annealed in a Tl over‐pressure. Electrical properties of the films were determined by four‐point probe analysis, and compositions were measured by ion‐backscattering spectroscopy. Structural analysis was performed by X‐ray diffraction and scanning electron microscopy. The BaF2 buffer layers were found to significantly improve the properties of the TICaBaCuO thin films.

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