Proceedings of the 14th International Symposium on Power Semiconductor Devices and Ics
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Dual gate lateral inversion layer emitter transistor

Proceedings of the 14th International Symposium on Power Semiconductor Devices and Ics ◽

10.1109/ispsd.2002.1016165 ◽

2005 ◽

Author(s):

K. Sheng ◽

U.N.K. Udugampola ◽

G.F.W. Khoo ◽

F. Udrea ◽

G.A.J. Amaratunga ◽

...

Keyword(s):

Inversion Layer ◽

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Ultra low on-resistance SBD with p-buried floating layer

Proceedings of the 14th International Symposium on Power Semiconductor Devices and Ics ◽

10.1109/ispsd.2002.1016164 ◽

2003 ◽

Author(s):

W. Saitoh ◽

I. Omura ◽

K. Tokano ◽

T. Ogura ◽

H. Ohashi

Keyword(s):

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Optimization of IGBT in power factor correction module for home appliance

Proceedings of the 14th International Symposium on Power Semiconductor Devices and Ics ◽

10.1109/ispsd.2002.1016201 ◽

2003 ◽

Author(s):

Chong Man Yun ◽

Bum Suk Suh ◽

Tae Hoon Kim

Keyword(s):

Power Factor ◽

Power Factor Correction ◽

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New SiGe power bipolar transistors with the optimum base and emitter structures

Proceedings of the 14th International Symposium on Power Semiconductor Devices and Ics ◽

10.1109/ispsd.2002.1016198 ◽

2003 ◽

Author(s):

F. Hirose ◽

Y. Souda ◽

K. Nakano ◽

S. Okumura

Keyword(s):

Bipolar Transistors

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Investigation on the short-circuit capability of 1200 V trench gate field-stop IGBTs

Proceedings of the 14th International Symposium on Power Semiconductor Devices and Ics ◽

10.1109/ispsd.2002.1016226 ◽

2003 ◽

Author(s):

M. Otsuki ◽

Y. Onozawa ◽

M. Kirisawa ◽

H. Kanemaru ◽

K. Yoshihara ◽

...

Keyword(s):

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I3T80: a 0.35 μm based system-on-chip technology for 42 V battery automotive applications

Proceedings of the 14th International Symposium on Power Semiconductor Devices and Ics ◽

10.1109/ispsd.2002.1016212 ◽

2003 ◽

Author(s):

P. Moens ◽

D. Bolognesi ◽

L. Delobel ◽

D. Villanueva ◽

H. Hakim ◽

...

Keyword(s):

System On Chip ◽

Automotive Applications ◽

Chip Technology ◽

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High-voltage UMOSFETs in 4H SiC

Proceedings of the 14th International Symposium on Power Semiconductor Devices and Ics ◽

10.1109/ispsd.2002.1016195 ◽

2003 ◽

Author(s):

I.A. Khan ◽

J.A. Cooper ◽

M.A. Capano ◽

T. Isaacs-Smith ◽

J.R. Williams

Keyword(s):

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Double-RESURF 700 V n-channel LDMOS with best-in-class on-resistance

Proceedings of the 14th International Symposium on Power Semiconductor Devices and Ics ◽

10.1109/ispsd.2002.1016190 ◽

2003 ◽

Author(s):

Z. Hossain ◽

M. Imam ◽

J. Fulton ◽

M. Tanaka

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New collector design concept for 4.5 kV injection enhanced gate transistor (IEGT)

Proceedings of the 14th International Symposium on Power Semiconductor Devices and Ics ◽

10.1109/ispsd.2002.1016168 ◽

2003 ◽

Author(s):

T. Inoue ◽

H. Ninomiya ◽

K. Sugiyama ◽

K. Matsusihta ◽

T. Ogura ◽

...

Keyword(s):

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Analytical model for thermal instability of low voltage power MOS and SOA in pulse operation

Proceedings of the 14th International Symposium on Power Semiconductor Devices and Ics ◽

10.1109/ispsd.2002.1016223 ◽

2003 ◽

Author(s):

P. Spirito ◽

G. Breglio ◽

V. d'Alessandro ◽

N. Rinaldi

Keyword(s):

Analytical Model ◽

Thermal Instability ◽

Low Voltage ◽

Pulse Operation

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