Analysis of high DC current gain structures for GaN/InGaN/GaN HBTs

2005 ◽  
Author(s):  
J.C. Li ◽  
D.M. Keogh ◽  
S. Raychaudhuri ◽  
A. Conway ◽  
Dongjiang Qiao ◽  
...  
Keyword(s):  
Current Gain ◽  
Dc Current

10 kV, 10 A Bipolar Junction Transistors and Darlington Transistors on 4H-SiC

2010 ◽  
Vol 645-648 ◽  
pp. 1025-1028 ◽  
Author(s):  
Qing Chun Jon Zhang ◽  
Robert Callanan ◽  
Anant K. Agarwal ◽  
Albert A. Burk ◽  
Michael J. O'Loughlin ◽  
...  
Keyword(s):  
Breakdown Voltage ◽  
Voltage Drop ◽  
Current Gain ◽  
Bipolar Junction Transistors ◽  
Collector Current ◽  
Forward Voltage ◽  
Collector Voltage ◽  
Forward Voltage Drop ◽  
Chip Size ◽  
Dc Current

4H-SiC Bipolar Junction Transistors (BJTs) and hybrid Darlington Transistors with 10 kV/10 A capability have been demonstrated for the first time. The SiC BJT (chip size: 0.75 cm2 with an active area of 0.336 cm2) conducts a collector current of 10 A (~ 30 A/cm2) with a forward voltage drop of 4.0 V (forced current gain βforced: 20) corresponding to a specific on-resistance of ~ 130 mΩ•cm2 at 25°C. The DC current gain, β, at a collector voltage of 15 V is measured to be 28 at a base current of 1 A. Both open emitter breakdown voltage (BVCBO) and open base breakdown voltage (BVCEO) of ~10 kV have been achieved. The 10 kV SiC Darlington transistor pair consists of a 10 A SiC BJT as the output device and a 1 A SiC BJT as the driver. The forward voltage drop of 4.5 V is measured at 10 A of collector current. The DC forced current gain at the collector voltage of 5.0 V was measured to be 440 at room temperature.

Surface transport and DC current gain in InGaAs/InP DHBTs for THz applications

2014 ◽  
Author(s):  
Han-Wei Chiang ◽  
Johann C. Rode ◽  
Prateek Choudhary ◽  
Mark J. W. Rodwell
Keyword(s):  
Current Gain ◽  
Surface Transport ◽  
Dc Current ◽  
Thz Applications

Comparison of Current-Induced Migration of Be and C in GaAs/AlGaAs HBTs

1992 ◽  
Vol 262 ◽  
Author(s):  
F. Ren ◽  
T. R. Fullowan ◽  
J. R. Lothian ◽  
P. W. Wisk ◽  
C. R. Abernathy ◽  
...  
Keyword(s):  
Current Density ◽  
Ideality Factor ◽  
Current Gain ◽  
Rapid Degradation ◽  
Enhanced Diffusion ◽  
Aging Conditions ◽  
The Stability ◽  
Dc Current ◽  
A Current ◽  
Base Doping

ABSTRACTWe contrast the stability under bias-aging conditions of GaAs/AlGaAs HBTs utilizing highly Be- or C-doped base layers. Devices with Be doping display a rapid degradation of dc current gain and junction ideality factor. At 200°C, a 2 × 10 μm2 Be-doped device (4 × 1019cm−3 base doping) operated at a current density of 2.5 × 104 A. cm−2 shows a decrease in gain from 16 to 1.5 within 2h. Under the same conditions a C-doped device with even higher base-doping (7 × 1019 cm−3) is stable over periods of 36h, the longest time we tested our structures. The degradation of Be-doped devices is consistent with the mechanism of recombination-enhanced diffusion of interstitials into the adjoining layers. Similar results are obtained with Zn-doped devices. Since C occupies the As sub-lattice rather than the Ga sublattice as with Be and Zn, it is not susceptible to reaction with Ga interstitials injected during growth or bias-aging.

High Voltage 4H-SiC BJTs with Deep Mesa Edge Termination

2011 ◽  
Vol 679-680 ◽  
pp. 710-713
Author(s):  
Jian Hui Zhang ◽  
Jian Hui Zhao ◽  
Xiao Hui Wang ◽  
Xue Qing Li ◽  
Leonid Fursin ◽  
...  
Keyword(s):  
High Voltage ◽  
Active Area ◽  
Current Gain ◽  
Bipolar Junction Transistors ◽  
Edge Termination ◽  
Direct Edge ◽  
Dc Current

This paper reports our recent study on 4H-SiC power bipolar junction transistors (BJTs) with deep mesa edge termination. 1200 V – 10 A 4H-SiC power BJTs with an active area of 4.64 mm2 have been demonstrated using deep mesa for direct edge termination and device isolation. The BJT’s DC current gain () is about 37, and the specific on-resistance (RSP-ON) is ~ 3.0 m-cm2. The BJT fabrication is substantially simplified and an overall 10% reduction in the device area is achieved compared to the multi-step JTE-based SiC-BJTs.

High DC current gain InGaP/GaAs HBTs grown by LP-MOCVD

2000 ◽  
Vol 36 (22) ◽  
pp. 1885 ◽  
Author(s):  
T. Chung ◽  
S. Bank ◽  
K.C. Hsieh
Keyword(s):  
Current Gain ◽  
Dc Current

scholarly journals Removal of Methylene Blue by Activated Glass Foams with TiO2 in Dark and Simulated Solar Light

2019 ◽  
Vol 61 (1) ◽  
pp. 33-43
Author(s):  
Florina Stefania Rus ◽  
Stefan Danica Novaconi ◽  
Paulina Vlazan ◽  
Madalina Ivanovici
Keyword(s):  
Energy Balance ◽  
Silicon Germanium ◽  
Computer Aided Design ◽  
Current Gain ◽  
Balance Model ◽  
Drift Diffusion ◽  
Simulated Solar Light ◽  
Oscillation Frequencies ◽  
Aided Design ◽  
Dc Current

AbstractThe effect of germanium trapezoidal profile shape on the direct current (DC) current gain (βF), cut-off frequency (fT) and maximum oscillation frequency (fMAX) of silicon-germanium (SiGe) hetero-junction bipolar transistors (HBTs) has been investigated. The energy balance (EB), hydrodynamic (HD) and drift-diffusion (DD) physical transport models in SILVACO technology computer aided design (T-CAD) simulator were used. It was found that the current gain values using energy balance model are higher than hydrodynamic and much higher than those corresponding to drift-diffusion. Moreover, decreasing the germanium gradient slope towards the collector side of the base enhances the maximum oscillation frequencies using HD and EB models whilst, they remain stable for DD model.

GaAsP/InGaP HBTs grown epitaxially on Si substrates: Effect of dislocation density on DC current gain

2018 ◽  
Vol 123 (16) ◽  
pp. 161532 ◽  
Author(s):  
Christopher Heidelberger ◽  
Eugene A. Fitzgerald
Keyword(s):  
Dislocation Density ◽  
Current Gain ◽  
Si Substrates ◽  
Dc Current
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