Native defect compensation in III-antimonide bulk substrates

2005 ◽  
Author(s):  
R. Pino ◽  
Youngok Ko ◽  
P.S. Dutta
Keyword(s):  
Native Defect

Growth of GaN without Yellow Luminescence

1995 ◽  
Vol 395 ◽  
Author(s):  
X. Zhang ◽  
P. Kung ◽  
D. Walker ◽  
A. Saxler ◽  
M. Razeghi
Keyword(s):  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Deep Level ◽  
Chemical Vapor ◽  
Growth Conditions ◽  
Native Defect ◽  
Yellow Luminescence ◽  
Gallium Vacancy ◽  
Rich Condition

ABSTRACTWe report the growth and photoluminescence characterization of GaN grown on different substrates and under different growth conditions using metalorganic chemical vapor deposition. The deep-level yellow luminescence centered at around 2.2eV is attributed to native defect, most possibly the gallium vacancy. The yellow luminescence can be substantially reduced By growing GaN under Ga-rich condition or doping GaN with Ge or Mg.

Nature of the native-defect ESR and hydrogen-dangling-bond centers in thin diamond films

1993 ◽  
Vol 48 (23) ◽  
pp. 17595-17598 ◽  
Author(s):  
H. Jia ◽  
J. Shinar ◽  
D. P. Lang ◽  
M. Pruski
Keyword(s):  
Diamond Films ◽  
Native Defect ◽  
Dangling Bond

Hg1-xCdxTe: Defect Structure Overview

1990 ◽  
Vol 216 ◽  
Author(s):  
M.A. Berding ◽  
A. Sher ◽  
A.-B. Chen
Keyword(s):  
Point Defects ◽  
Defect Structure ◽  
Defect Formation ◽  
Activation Energies ◽  
Mass Action ◽  
Native Defect ◽  
Native Point Defects ◽  
Vacancy Migration ◽  
Formation Energies ◽  
Diffusion Activation

ABSTRACTNative point defects play an important role in HgCdTe. Here we discuss some of the relevant mass action equations, and use recently calculated defect formation energies to discuss relative defect concentrations. In agreement with experiment, the Hg vacancy is found to be the dominant native defect to accommodate excess tellurium. Preliminary estimates find the Hg antisite and the Hg interstitial to be of comparable densities. Our calculated defect formation energies are also consistent with measured diffusion activation energies, assuming the interstitial and vacancy migration energies are small.

Correlation between Room Temperature Photoluminescence and Resistivity in Semiinsulating Silicon Carbide

2006 ◽  
Vol 527-529 ◽  
pp. 717-720 ◽  
Author(s):  
Sashi Kumar Chanda ◽  
Yaroslav Koshka ◽  
Murugesu Yoganathan
Keyword(s):  
Low Temperature ◽  
Point Defects ◽  
Room Temperature ◽  
Vanadium Content ◽  
Mapping Technique ◽  
Native Defect ◽  
Room Temperature Photoluminescence ◽  
Native Point Defects ◽  
Pl Mapping ◽  
Resistivity Variation

A room temperature PL mapping technique was applied to establish the origin of resistivity variation in PVT-grown 6H SiC substrates. A direct correlation between the native defect-related PL and resistivity was found in undoped (V-free) samples. In vanadium-doped samples with low vanadium content, the resistivity showed a good correlation with the total PL signal consisting of contributions from both vanadium and native point defects. Well-known UD1 and UD3 levels were revealed by low-temperature PL spectroscopy. Some correlation was observed between these low-temperature PL signatures and the resistivity distribution.

Observation of a spin one native defect in as-grown high-purity semi-insulating 4H SiC

2005 ◽  
Vol 97 (12) ◽  
pp. 123509 ◽  
Author(s):  
M. E. Zvanut ◽  
Haiyan Wang ◽  
Mpumelelo Richards ◽  
V. V. Konovalov
Keyword(s):  
High Purity ◽  
Native Defect

Native defect equilibrium in semi-insulating CdTe(Cl)

1993 ◽  
Vol 16 (1-3) ◽  
pp. 215-218 ◽  
Author(s):  
P. Höschl ◽  
R. Grill ◽  
J. Franc ◽  
P. Moravec ◽  
E. Belas
Keyword(s):  
Native Defect

Native Defect Control of CdTe Thin Film Solar Cells by Close-Spaced Sublimation

2001 ◽  
Vol 40 (Part 1, No. 5A) ◽  
pp. 3089-3092 ◽  
Author(s):  
Tamotsu Okamoto ◽  
Shinji Kitamoto ◽  
Akira Yamada ◽  
Makoto Konagai
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Thin Film Solar Cells ◽  
Cdte Thin Film ◽  
Native Defect ◽  
Defect Control

Development of AIIBVI Semiconductors Doped with Cr for IRLaser Application

2001 ◽  
Vol 692 ◽  
Author(s):  
V. A. Kasiyan ◽  
R. Z. Shneck ◽  
Z. M. Dashevsky ◽  
S. R. Rotman
Keyword(s):  
Annealing Temperature ◽  
Optical Measurements ◽  
High Electron ◽  
Native Defect ◽  
High Annealing Temperature ◽  
High Electron Mobility ◽  
Gas Source ◽  
Low Temperature Annealing ◽  
High Annealing ◽  
Absorption Measurements

AbstractElectrical and optical measurements obtained with CdSe single crystals doped with chromium from a gas source CrSe over a wide temperature range (500–1050 °C) are compared with ZnSe annealed in liquid metal (Zn). These processes are intended to control the concentrations of the impurity and intrinsic defects. The low temperature annealing of CdSe crystals in CrSe atmosphere allows obtaining high electron mobility up to 9000 cm2/Vs at 80 K and demonstrates the low native defect concentration. A high temperature annealing gives rise to increased electron concentration with decreased mobility. Optical absorption measurements show that at the high annealing temperature effective doping with Cr takes place. The impurity absorption beyond the absorption edge is interpreted by the excitation of Cr++ and Cr+ deep levels

Sign in / Sign up

Export Citation Format

Share Document