A new field-plated GaN HEMT structure with improved power and noise performance

2005 ◽  
Author(s):  
Hongtao Xu ◽  
C. Sanabria ◽  
A. Chini ◽  
Yun Wei ◽  
S. Heikman ◽  
...  
Keyword(s):  
Noise Performance ◽  
Gan Hemt ◽  
Hemt Structure

A NEW FIELD-PLATED GaN HEMT STRUCTURE WITH IMPROVED POWER AND NOISE PERFORMANCE

2005 ◽  
Author(s):  
HONGTAO XU ◽  
CHRISTOPHER SANABRIA ◽  
ALESSANDRO CHINI ◽  
YUN WEI ◽  
STEN HEIKMAN ◽  
...  
Keyword(s):  
Noise Performance ◽  
Gan Hemt ◽  
Hemt Structure

A NEW FIELD-PLATED GaN HEMT STRUCTURE WITH IMPROVED POWER AND NOISE PERFORMANCE

2004 ◽  
Vol 14 (03) ◽  
pp. 810-815
Author(s):  
HONGTAO XU ◽  
CHRISTOPHER SANABRIA ◽  
ALESSANDRO CHINI ◽  
YUN WEI ◽  
STEN HEIKMAN ◽  
...  
Keyword(s):  
Noise Performance ◽  
Power Capacity ◽  
Gan Hemt ◽  
Additional Processing ◽  
Hemt Structure

Field-plated structures can dramatically improve power capacity of GaN HEMT devices. In this paper, two different field-plated GaN HEMT structures will be demonstrated and compared to each other. The results show that a new GaN HEMT structure improves both power and noise performance without additional processing or costs.

Wet etching for isolation of N-polar GaN HEMT structure by electrodeless photo-assisted electrochemical reaction

2021 ◽  
Vol 60 (SC) ◽  
pp. SCCF06
Author(s):  
T. Aota ◽  
A. Hayasaka ◽  
I. Makabe ◽  
S. Yoshida ◽  
T. Gotow ◽  
...  
Keyword(s):  
Electrochemical Reaction ◽  
Wet Etching ◽  
Gan Hemt ◽  
Hemt Structure

The effect of the gate-drain distance on high frequency and noise performance for AlGaN/GaN HEMT

2015 ◽  
Vol 57 (9) ◽  
pp. 2020-2023
Author(s):  
Li Shen ◽  
Bo Chen ◽  
Ling Sun ◽  
Jianjun Gao
Keyword(s):  
High Frequency ◽  
Noise Performance ◽  
Gan Hemt

Mobility enhancement of 2DEG in MOVPE-grown AlGaN/AlN/GaN HEMT structure using vicinal (0 0 0 1) sapphire

2009 ◽  
Vol 46 (6) ◽  
pp. 812-816 ◽  
Author(s):  
Weiguo Hu ◽  
Bei Ma ◽  
Dabing Li ◽  
Mitsuhisa Narukawa ◽  
Hideto Miyake ◽  
...  
Keyword(s):  
Gan Hemt ◽  
Hemt Structure

Effects of AlGaN∕GaN HEMT structure on RF reliability

2005 ◽  
Vol 41 (3) ◽  
pp. 155 ◽  
Author(s):  
C. Lee ◽  
L. Witkowski ◽  
H.-Q. Tserng ◽  
P. Saunier ◽  
R. Birkhahn ◽  
...  
Keyword(s):  
Gan Hemt ◽  
Hemt Structure

UNSTRAINED InAlN/GaN HEMT STRUCTURE

2005 ◽  
Author(s):  
M. NEUBURGER ◽  
T. ZIMMERMANN ◽  
E. KOHN ◽  
A. DADGAR ◽  
F. SCHULZE ◽  
...  
Keyword(s):  
Gan Hemt ◽  
Hemt Structure

An analysis of the increase in sheet resistance with the lapse of time of Al0.3Ga0.7N/GaN HEMT structure wafers

2007 ◽  
Vol 4 (7) ◽  
pp. 2678-2681 ◽  
Author(s):  
Junjiroh Kikawa ◽  
Tomoyuki Yamada ◽  
Tadayoshi Tsuchiya ◽  
Shinichi Kamiya ◽  
Kenichi Kosaka ◽  
...  
Keyword(s):  
Sheet Resistance ◽  
Gan Hemt ◽  
Hemt Structure
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