2008 Joint Non-Volatile Semiconductor Memory Workshop and International Conference on Memory Technology and Design

2008 ◽

Cited By ~ 6

Author(s):

Yong Kyu Lee ◽

Jung Ho Moon ◽

Young Ho Kim ◽

Myung-Jo Chun ◽

Soung-Youb Ha ◽

...

Keyword(s):

Smart Card ◽

Logic Process

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Advantage of Floating Gate B4-Flash over Retention Reliability after Cycling - Characterization by Variation of Transconductance

2008 Joint Non-Volatile Semiconductor Memory Workshop and International Conference on Memory Technology and Design ◽

10.1109/nvsmw.2008.10 ◽

2008 ◽

Cited By ~ 5

Author(s):

S. Shukuri ◽

N. Ajika ◽

S. Shimizu ◽

M. Mihara ◽

Y. Kawajiri ◽

...

Keyword(s):

Floating Gate

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3-D Channel Structure Flash Having Short Channel Effect Immunity and Low Random Telegraph Signal Noise

2008 Joint Non-Volatile Semiconductor Memory Workshop and International Conference on Memory Technology and Design ◽

10.1109/nvsmw.2008.11 ◽

2008 ◽

Cited By ~ 3

Author(s):

Wookhyun Kwon ◽

Yun Heub Song ◽

Yimao Cai ◽

Wonhyung Ryu ◽

Younggoan Jang ◽

...

Keyword(s):

Channel Structure ◽

Short Channel ◽

Short Channel Effect ◽

Random Telegraph Signal ◽

Signal Noise ◽

Channel Effect

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Opportunities and Challenges in Multi-Times-Programmable Floating-Gate Logic Non-Volatile Memories

2008 Joint Non-Volatile Semiconductor Memory Workshop and International Conference on Memory Technology and Design ◽

10.1109/nvsmw.2008.12 ◽

2008 ◽

Cited By ~ 7

Author(s):

Bin Wang ◽

Yanjun Ma

Keyword(s):

Floating Gate

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A 90nm Embedded Page Flash for EEPROM Replacement in System On Chip

2008 Joint Non-Volatile Semiconductor Memory Workshop and International Conference on Memory Technology and Design ◽

10.1109/nvsmw.2008.14 ◽

2008 ◽

Cited By ~ 4

Author(s):

A. Conte ◽

G. Matranga ◽

D. De Costantini ◽

M. Micciche ◽

C. Ucciardello ◽

...

Keyword(s):

System On Chip ◽

On Chip

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In-Ga-O Based Double-Heater Phase Change Memory Cell

2008 Joint Non-Volatile Semiconductor Memory Workshop and International Conference on Memory Technology and Design ◽

10.1109/nvsmw.2008.15 ◽

2008 ◽

Author(s):

S.-L. Wang ◽

C.-Y. Chen ◽

M.-K. Hsieh ◽

W.-C. Lee ◽

A. H. Kung ◽

...

Keyword(s):

Phase Change ◽

Phase Change Memory ◽

Memory Cell ◽

Change Memory

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A Study of Sub-40nm FinFET BE-SONOS NAND Flash

2008 Joint Non-Volatile Semiconductor Memory Workshop and International Conference on Memory Technology and Design ◽

10.1109/nvsmw.2008.39 ◽

2008 ◽

Cited By ~ 1

Author(s):

Tzu-Hsuan Hsu ◽

Hang-Ting Lue ◽

Wu-Chin Peng ◽

Cheng-Hung Tsai ◽

Ya-Chin King ◽

...

Keyword(s):

Nand Flash

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Evidence of the Prominent Role of the Time-Under-Melt Parameter in the Reset Switching of Phase-Change Line Cells

2008 Joint Non-Volatile Semiconductor Memory Workshop and International Conference on Memory Technology and Design ◽

10.1109/nvsmw.2008.16 ◽

2008 ◽

Cited By ~ 1

Author(s):

L. Goux ◽

T. Gille ◽

D. Tio Castro ◽

G. A. M. Hurkx ◽

J. G. Lisoni ◽

...

Keyword(s):

Phase Change

Download Full-text

Si Nanocrystal Split Gate Technology Optimization for High Performance and Reliable Embedded Microcontroller Applications

2008 Joint Non-Volatile Semiconductor Memory Workshop and International Conference on Memory Technology and Design ◽

10.1109/nvsmw.2008.23 ◽

2008 ◽

Cited By ~ 1

Author(s):

Sung-Taeg Kang ◽

Jane Yater ◽

Cheongmin Hong ◽

James Shen ◽

Nicole Ellis ◽

...

Keyword(s):

High Performance ◽

Si Nanocrystal

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Numerical Implementation of Low Field Resistance Drift for Phase Change Memory Simulations

2008 Joint Non-Volatile Semiconductor Memory Workshop and International Conference on Memory Technology and Design ◽

10.1109/nvsmw.2008.17 ◽

2008 ◽

Cited By ~ 16

Author(s):

A. Redaelli ◽

A. Pirovano ◽

A. Locatelli ◽

F. Pellizzer

Keyword(s):

Phase Change ◽

Phase Change Memory ◽

Field Resistance ◽

Numerical Implementation ◽

Low Field ◽

Change Memory

Download Full-text

2008 Joint Non-Volatile Semiconductor Memory Workshop and International Conference on Memory Technology and Design
Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

2T-FN eNVM with 90 nm Logic Process for Smart Card

Advantage of Floating Gate B4-Flash over Retention Reliability after Cycling - Characterization by Variation of Transconductance

3-D Channel Structure Flash Having Short Channel Effect Immunity and Low Random Telegraph Signal Noise

Opportunities and Challenges in Multi-Times-Programmable Floating-Gate Logic Non-Volatile Memories

A 90nm Embedded Page Flash for EEPROM Replacement in System On Chip

In-Ga-O Based Double-Heater Phase Change Memory Cell

A Study of Sub-40nm FinFET BE-SONOS NAND Flash

Evidence of the Prominent Role of the Time-Under-Melt Parameter in the Reset Switching of Phase-Change Line Cells

Si Nanocrystal Split Gate Technology Optimization for High Performance and Reliable Embedded Microcontroller Applications

Numerical Implementation of Low Field Resistance Drift for Phase Change Memory Simulations

Export Citation Format

2008 Joint Non-Volatile Semiconductor Memory Workshop and International Conference on Memory Technology and DesignLatest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

2T-FN eNVM with 90 nm Logic Process for Smart Card

Advantage of Floating Gate B4-Flash over Retention Reliability after Cycling - Characterization by Variation of Transconductance

3-D Channel Structure Flash Having Short Channel Effect Immunity and Low Random Telegraph Signal Noise

Opportunities and Challenges in Multi-Times-Programmable Floating-Gate Logic Non-Volatile Memories

A 90nm Embedded Page Flash for EEPROM Replacement in System On Chip

In-Ga-O Based Double-Heater Phase Change Memory Cell

A Study of Sub-40nm FinFET BE-SONOS NAND Flash

Evidence of the Prominent Role of the Time-Under-Melt Parameter in the Reset Switching of Phase-Change Line Cells

Si Nanocrystal Split Gate Technology Optimization for High Performance and Reliable Embedded Microcontroller Applications

Numerical Implementation of Low Field Resistance Drift for Phase Change Memory Simulations

2008 Joint Non-Volatile Semiconductor Memory Workshop and International Conference on Memory Technology and Design
Latest Publications