3-D Channel Structure Flash Having Short Channel Effect Immunity and Low Random Telegraph Signal Noise

Author(s):  
Wookhyun Kwon ◽  
Yun Heub Song ◽  
Yimao Cai ◽  
Wonhyung Ryu ◽  
Younggoan Jang ◽  
...  
Author(s):  
Yuk L. Tsang ◽  
Xiang D. Wang ◽  
Reyhan Ricklefs ◽  
Jason Goertz

Abstract In this paper, we report a transistor model that has successfully led to the identification of a non visual defect. This model was based on detailed electrical characterization of a MOS NFET exhibiting a threshold voltage (Vt) of just about 40mv lower than normal. This small Vt delta was based on standard graphical extrapolation method in the usual linear Id-Vg plots. We observed, using a semilog plot, two slopes in the Id-Vg curves with Vt delta magnified significantly in the subthreshold region. The two slopes were attributed to two transistors in parallel with different Vts. We further found that one of the parallel transistors had short channel effect due to a punch-through mechanism. It was proposed and ultimately confirmed the cause was due to a dopant defect using scanning capacitance microscopy (SCM) technique.


2015 ◽  
Vol 36 (7) ◽  
pp. 648-650 ◽  
Author(s):  
Miao Xu ◽  
Huilong Zhu ◽  
Lichuan Zhao ◽  
Huaxiang Yin ◽  
Jian Zhong ◽  
...  

2007 ◽  
Vol 91 (11) ◽  
pp. 113508 ◽  
Author(s):  
K. Tukagoshi ◽  
F. Fujimori ◽  
T. Minari ◽  
T. Miyadera ◽  
T. Hamano ◽  
...  

2011 ◽  
Vol 59 (3) ◽  
pp. 2368-2371 ◽  
Author(s):  
Jeonghyuk Yim ◽  
Han Seok Seo ◽  
Do Hyun Lee ◽  
Chang Hyun Kim ◽  
Hyeong Joon Kim

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