Proceedings of the 1991 Bipolar Circuits and Technology Meeting
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Stress analysis of trench isolation structure in advanced bipolar LSIs

Proceedings of the 1991 Bipolar Circuits and Technology Meeting ◽

10.1109/bipol.1991.161001 ◽

2002 ◽

Cited By ~ 3

Author(s):

Y. Katsumata ◽

I. Katakabe ◽

N. Itoh ◽

E. Tsukioka ◽

C. Yoshino ◽

...

Keyword(s):

Stress Analysis ◽

Trench Isolation

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Ion-implanted base SiGe PNP self-aligned SEEW transistors

Proceedings of the 1991 Bipolar Circuits and Technology Meeting ◽

10.1109/bipol.1991.160960 ◽

2002 ◽

Cited By ~ 2

Author(s):

D. Nguyen-Ngoc ◽

D.L. Harame ◽

J.N. Burghartz ◽

R.C. McIntosh ◽

E.F. Crabbe ◽

...

Keyword(s):

Ion Implanted

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A 100-Msps 700 MHz bandwidth sample-and-hold amplifier

Proceedings of the 1991 Bipolar Circuits and Technology Meeting ◽

10.1109/bipol.1991.160997 ◽

2002 ◽

Cited By ~ 1

Author(s):

M. Imamura ◽

N. Kusayanagi ◽

M. Segami

Keyword(s):

Sample And Hold

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Temperature dependence and post-stress recovery of hot electron degradation effects in bipolar transistors

Proceedings of the 1991 Bipolar Circuits and Technology Meeting ◽

10.1109/bipol.1991.160981 ◽

2002 ◽

Cited By ~ 10

Author(s):

C.-J. Huang ◽

C.J. Sun ◽

T.A. Grotjohn ◽

D.K. Reinhard ◽

C.-C.W. Yu

Keyword(s):

Temperature Dependence ◽

Bipolar Transistors ◽

Stress Recovery ◽

Hot Electron ◽

Post Stress

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Predictive modeling of thermal effects in BJTs

Proceedings of the 1991 Bipolar Circuits and Technology Meeting ◽

10.1109/bipol.1991.160963 ◽

2002 ◽

Cited By ~ 10

Author(s):

R.M. Fox ◽

S.-G. Lee

Keyword(s):

Predictive Modeling ◽

Thermal Effects

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A new technique for monolithic D/A conversion

Proceedings of the 1991 Bipolar Circuits and Technology Meeting ◽

10.1109/bipol.1991.160998 ◽

2002 ◽

Author(s):

D.F. Bowers

Keyword(s):

New Technique ◽

A New Technique

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Surface recombination in bipolar transistors; accurate determination of carriers capture cross-sections of Si/SiO/sub 2/ states by means of process/device simulations

Proceedings of the 1991 Bipolar Circuits and Technology Meeting ◽

10.1109/bipol.1991.160983 ◽

2002 ◽

Author(s):

E. Dubois

Keyword(s):

Cross Sections ◽

Accurate Determination ◽

Surface Recombination ◽

Bipolar Transistors ◽

Capture Cross ◽

Capture Cross Sections

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A Si-bipolar 23 Gbit/s multiplexer and a 15 GHz 2:1 static frequency divider

Proceedings of the 1991 Bipolar Circuits and Technology Meeting ◽

10.1109/bipol.1991.160950 ◽

2002 ◽

Cited By ~ 5

Author(s):

A. Felder ◽

P. Weger ◽

E. Bertagnolli ◽

K. Ehinger ◽

J. Hauenschild ◽

...

Keyword(s):

Frequency Divider

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Measuring the base resistance of bipolar transistors

Proceedings of the 1991 Bipolar Circuits and Technology Meeting ◽

10.1109/bipol.1991.160988 ◽

2002 ◽

Cited By ~ 22

Author(s):

T. Nakadai ◽

K. Hashimoto

Keyword(s):

Bipolar Transistors ◽

Base Resistance

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A wideband current-mode variable gain-control circuit

Proceedings of the 1991 Bipolar Circuits and Technology Meeting ◽

10.1109/bipol.1991.160994 ◽

2002 ◽

Author(s):

B. Harvey

Keyword(s):

Gain Control ◽

Current Mode ◽

Control Circuit ◽

Variable Gain

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Proceedings of the 1991 Bipolar Circuits and Technology MeetingLatest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Stress analysis of trench isolation structure in advanced bipolar LSIs

Ion-implanted base SiGe PNP self-aligned SEEW transistors

A 100-Msps 700 MHz bandwidth sample-and-hold amplifier

Temperature dependence and post-stress recovery of hot electron degradation effects in bipolar transistors

Predictive modeling of thermal effects in BJTs

A new technique for monolithic D/A conversion

Surface recombination in bipolar transistors; accurate determination of carriers capture cross-sections of Si/SiO/sub 2/ states by means of process/device simulations

A Si-bipolar 23 Gbit/s multiplexer and a 15 GHz 2:1 static frequency divider

Measuring the base resistance of bipolar transistors

A wideband current-mode variable gain-control circuit

Proceedings of the 1991 Bipolar Circuits and Technology Meeting
Latest Publications