2012 IEEE International Meeting for Future of Electron Devices, Kansai
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81

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4

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Published By IEEE

9781467308366, 9781467308373

Latest Documents Most Cited Documents Contributed Authors Related Sources Related Keywords

Bandgap widening of β-FeSi2 deposited by RF-sputtering method using a Si-rich FeSi4 target

2012 IEEE International Meeting for Future of Electron Devices, Kansai ◽

10.1109/imfedk.2012.6218611 ◽

2012 ◽

Author(s):

Keiichiro Hiehata ◽

Yoshiaki Shimamoto ◽

Kazuhiro Nakamura

Keyword(s):

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Poster session [breaker page]

2012 IEEE International Meeting for Future of Electron Devices, Kansai ◽

10.1109/imfedk.2012.6218589 ◽

2012 ◽

Keyword(s):

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Observation of conductive filament formation in an organic non-volatile memory resistor device

2012 IEEE International Meeting for Future of Electron Devices, Kansai ◽

10.1109/imfedk.2012.6218570 ◽

2012 ◽

Author(s):

T. T. Dao ◽

T. V. Tran ◽

K. Higashimine ◽

H. Okada ◽

D. Mott ◽

...

Keyword(s):

Filament Formation ◽

Conductive Filament ◽

Non Volatile Memory ◽

Volatile Memory

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Fabrication of nano-patterns using quick gel-nanoimprint process

2012 IEEE International Meeting for Future of Electron Devices, Kansai ◽

10.1109/imfedk.2012.6218583 ◽

2012 ◽

Author(s):

Shinji Araki ◽

Min Zhang ◽

Takahiro Doe ◽

Li Lu ◽

Masahiro Horita ◽

...

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An estimation of the inversion charge influenced by quantum effect for sub-20nm MOSFETs

2012 IEEE International Meeting for Future of Electron Devices, Kansai ◽

10.1109/imfedk.2012.6218596 ◽

2012 ◽

Author(s):

Masahiro Yamamoto ◽

Akira Hiroki ◽

Jong Chul Yoon

Keyword(s):

Quantum Effect ◽

Inversion Charge

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A reflection layer for enhanced THz radiation from InAs thin films

2012 IEEE International Meeting for Future of Electron Devices, Kansai ◽

10.1109/imfedk.2012.6218609 ◽

2012 ◽

Author(s):

K. Nishisaka ◽

T. Maemoto ◽

S. Sasa ◽

K. Takayama ◽

M. Tonouchi

Keyword(s):

Thz Radiation ◽

Inas Thin Films

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Improvement of drain leakage current characteristics in metal-oxide-semiconductor-field-effect-transistor by asymmetric source-drain structure

2012 IEEE International Meeting for Future of Electron Devices, Kansai ◽

10.1109/imfedk.2012.6218598 ◽

2012 ◽

Author(s):

Byoungseon Choi ◽

Hyunae Park ◽

Dongsoo Kim ◽

Byoungdeog Choi

Keyword(s):

Metal Oxide ◽

Leakage Current ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Effect Transistor ◽

Current Characteristics

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Photoluminescence study on recrystallization of ultra-shallow junction towards in-line measurements

2012 IEEE International Meeting for Future of Electron Devices, Kansai ◽

10.1109/imfedk.2012.6218592 ◽

2012 ◽

Author(s):

Gota Murai ◽

Masashi Okutani ◽

Hiroki Saikusa ◽

Masahiro Yoshimoto ◽

Woo Sik Yoo

Keyword(s):

Photoluminescence Study ◽

Shallow Junction

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Keynote speeches [breaker page]

2012 IEEE International Meeting for Future of Electron Devices, Kansai ◽

10.1109/imfedk.2012.6218560 ◽

2012 ◽

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Mechanical strain altered gate and substrate currents in n and p-channel MOSFETs

2012 IEEE International Meeting for Future of Electron Devices, Kansai ◽

10.1109/imfedk.2012.6218577 ◽

2012 ◽

Author(s):

Wangran Wu ◽

Jiabao Sun ◽

Yi Zhao

Keyword(s):

Mechanical Strain

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