GaN-Based Materials and Devices - Selected Topics in Electronics and Systems
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15

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1

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Published By WORLD SCIENTIFIC

9789812388445, 9789812562364

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ETCHED APERTURE GaN CAVET THROUGH PHOTOELECTROCHEMICAL WET ETCHING

GaN-Based Materials and Devices - Selected Topics in Electronics and Systems ◽

10.1142/9789812562364_0013 ◽

2004 ◽

pp. 245-264

Author(s):

YAN GAO ◽

ILAN BEN-YAACOV ◽

UMESH MISHRA ◽

EVELYN HU

Keyword(s):

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INSULATED GATE III-N HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS

GaN-Based Materials and Devices - Selected Topics in Electronics and Systems ◽

10.1142/9789812562364_0011 ◽

2004 ◽

pp. 197-224 ◽

Author(s):

G. SIMIN ◽

M. ASIF KHAN ◽

M. S. SHUR ◽

R. GASKA

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Heterostructure Field Effect Transistors

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GROWTH OF THICK GaN FILMS AND SEEDS FOR BULK CRYSTAL GROWTH

GaN-Based Materials and Devices - Selected Topics in Electronics and Systems ◽

10.1142/9789812562364_0004 ◽

2004 ◽

pp. 51-62

Author(s):

P. R. TAVERNIER ◽

E. V. ETZKORN ◽

D. R. CLARKE

Keyword(s):

Crystal Growth ◽

Bulk Crystal ◽

Bulk Crystal Growth

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STRAIN OF GaN LAYERS GROWN USING 6H-SiC(0001) SUBSTRATES WITH DIFFERENT BUFFER LAYERS

GaN-Based Materials and Devices - Selected Topics in Electronics and Systems ◽

10.1142/9789812562364_0003 ◽

2004 ◽

pp. 39-50

Author(s):

S. EINFELDT ◽

Z. J. REITMEIER ◽

R. F. DAVIS

Keyword(s):

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GENERATION-RECOMBINATION NOISE IN GaN-BASED DEVICES

GaN-Based Materials and Devices - Selected Topics in Electronics and Systems ◽

10.1142/9789812562364_0010 ◽

2004 ◽

pp. 175-195 ◽

Author(s):

SERGEY L. RUMYANTSEV ◽

NEZIH PALA ◽

MICHAEL. S. SHUR ◽

MICHAEL E. LEVINSHTEIN ◽

REMIS GASKA ◽

...

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n-AlGaAs/p-GaAs/n-GaN HETEROJUNCTION BIPOLAR TRANSISTOR: THE FIRST TRANSISTOR FORMED VIA WAFER FUSION

GaN-Based Materials and Devices - Selected Topics in Electronics and Systems ◽

10.1142/9789812562364_0014 ◽

2004 ◽

pp. 265-284

Author(s):

SARAH ESTRADA ◽

EVELYN HU ◽

UMESH MISHRA

Keyword(s):

Bipolar Transistor ◽

Heterojunction Bipolar Transistor ◽

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QUASI-BALLISTIC AND OVERSHOOT TRANSPORT IN GROUP III-NITRIDES

GaN-Based Materials and Devices - Selected Topics in Electronics and Systems ◽

10.1142/9789812562364_0008 ◽

2004 ◽

pp. 127-154

Author(s):

K. W. KIM ◽

V. A. KOCHELAP ◽

V. N. SOKOLOV ◽

S. M. KOMIRENKO

Keyword(s):

Group Iii Nitrides ◽

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DIRECT BONDING OF GaN AND SiC: A NOVEL TECHNIQUE FOR ELECTRONIC DEVICE FABRICATION

GaN-Based Materials and Devices - Selected Topics in Electronics and Systems ◽

10.1142/9789812562364_0006 ◽

2004 ◽

pp. 83-105

Author(s):

JAESEOB LEE ◽

R. F. DAVIS ◽

R. J. NEMANICH

Keyword(s):

Electronic Device ◽

Device Fabrication ◽

Novel Technique ◽

Electronic Device Fabrication

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FRONT MATTER

GaN-Based Materials and Devices - Selected Topics in Electronics and Systems ◽

10.1142/9789812562364_fmatter ◽

2004 ◽

pp. i-x

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Electronic Properties of GaN (0001) – Dielectric Interfaces

GaN-Based Materials and Devices - Selected Topics in Electronics and Systems ◽

10.1142/9789812562364_0007 ◽

2004 ◽

pp. 107-125

Author(s):

T. E. Cook ◽

C. C. Fulton ◽

W. J. Mecouch ◽

R. F. Davis ◽

G. Lucovsky ◽

...

Keyword(s):

Electronic Properties ◽

Dielectric Interfaces

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