GaN-Based Materials and Devices - Selected Topics in Electronics and Systems
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9789812388445, 9789812562364
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ETCHED APERTURE GaN CAVET THROUGH PHOTOELECTROCHEMICAL WET ETCHING

2004 ◽  
pp. 245-264
Author(s):  
YAN GAO ◽  
ILAN BEN-YAACOV ◽  
UMESH MISHRA ◽  
EVELYN HU
Keyword(s):  
Wet Etching

INSULATED GATE III-N HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS

2004 ◽  
pp. 197-224 ◽  
Author(s):  
G. SIMIN ◽  
M. ASIF KHAN ◽  
M. S. SHUR ◽  
R. GASKA
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Heterostructure Field Effect Transistors

GROWTH OF THICK GaN FILMS AND SEEDS FOR BULK CRYSTAL GROWTH

2004 ◽  
pp. 51-62
Author(s):  
P. R. TAVERNIER ◽  
E. V. ETZKORN ◽  
D. R. CLARKE
Keyword(s):  
Crystal Growth ◽  
Bulk Crystal ◽  
Bulk Crystal Growth

STRAIN OF GaN LAYERS GROWN USING 6H-SiC(0001) SUBSTRATES WITH DIFFERENT BUFFER LAYERS

2004 ◽  
pp. 39-50
Author(s):  
S. EINFELDT ◽  
Z. J. REITMEIER ◽  
R. F. DAVIS
Keyword(s):  
Buffer Layers

GENERATION-RECOMBINATION NOISE IN GaN-BASED DEVICES

2004 ◽  
pp. 175-195 ◽  
Author(s):  
SERGEY L. RUMYANTSEV ◽  
NEZIH PALA ◽  
MICHAEL. S. SHUR ◽  
MICHAEL E. LEVINSHTEIN ◽  
REMIS GASKA ◽  
...  

QUASI-BALLISTIC AND OVERSHOOT TRANSPORT IN GROUP III-NITRIDES

2004 ◽  
pp. 127-154
Author(s):  
K. W. KIM ◽  
V. A. KOCHELAP ◽  
V. N. SOKOLOV ◽  
S. M. KOMIRENKO
Keyword(s):  
Group Iii Nitrides ◽  
Group Iii

MATERIALS PROPERTIES OF NITRIDES: SUMMARY

2004 ◽  
pp. 1-19 ◽  
Author(s):  
SERGEY L. RUMYANTSEV ◽  
MICHAEL. S. SHUR ◽  
MICHAEL E. LEVINSHTEIN
Keyword(s):  
Materials Properties
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