LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels

Strain and vertical scaling in the base of Al/sub 0.48/In/sub 0.52/As/In/sub x/Ga/sub 1-x/As heterostructure bipolar transistors

LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels ◽

10.1109/iciprm.1992.235575 ◽

2003 ◽

Author(s):

B. Jalali ◽

A.F.J. Levi ◽

S.L. Chuang ◽

P.R. Smith ◽

D.A. Humphrey ◽

...

Keyword(s):

Bipolar Transistors ◽

Vertical Scaling

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Monolithic integration of InGaAs/InAlAs MODFETs and RTDs on InP-bonded-to Si substrate

LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels ◽

10.1109/iciprm.1992.235650 ◽

2003 ◽

Author(s):

A. Fathimulla ◽

H. Hier ◽

J. Abrahams ◽

T. Loughran

Keyword(s):

Monolithic Integration ◽

Si Substrate

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1/f noise characteristics of InP/InGaAs heterojunction bipolar transistors

LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels ◽

10.1109/iciprm.1992.235676 ◽

2003 ◽

Cited By ~ 2

Author(s):

M.N. Tutt ◽

D. Pavlidis ◽

H.-F. Chau

Keyword(s):

Heterojunction Bipolar Transistors ◽

Bipolar Transistors ◽

Noise Characteristics

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High-gain InAlAs/InGaAs npn single heterojunction bipolar transistors grown by molecular beam epitaxy

LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels ◽

10.1109/iciprm.1992.235671 ◽

2003 ◽

Author(s):

H.-H. Lin ◽

C.-H. Huang

Keyword(s):

Molecular Beam Epitaxy ◽

Heterojunction Bipolar Transistors ◽

Molecular Beam ◽

High Gain ◽

Bipolar Transistors

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Ultrafast optoelectronics

LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels ◽

10.1109/iciprm.1992.235697 ◽

2003 ◽

Author(s):

J. Bowers

Keyword(s):

Ultrafast Optoelectronics

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Highly uniform InGaAsP/InP growth in a multiwafer rotating disk reactor by MOCVD

LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels ◽

10.1109/iciprm.1992.235654 ◽

2003 ◽

Author(s):

M.A. McKee ◽

B.-S. Yoo ◽

R.A. Stall

Keyword(s):

Rotating Disk ◽

Rotating Disk Reactor ◽

Highly Uniform

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Sinterless contacts to shallow junction InP solar cells

LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels ◽

10.1109/iciprm.1992.235689 ◽

2003 ◽

Author(s):

V.G. Weizer ◽

N.S. Fatemi ◽

A.L. Korenyi-Both

Keyword(s):

Solar Cells ◽

Shallow Junction

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Growth of semi-insulating InP:Fe in a low pressure hydride VPE system using elemental iron and ferrocene as dopant sources

LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels ◽

10.1109/iciprm.1992.235663 ◽

2003 ◽

Cited By ~ 2

Author(s):

R. Beccard ◽

S. Beuven ◽

K. Heime ◽

P. Harde ◽

R. Schmald

Keyword(s):

Low Pressure ◽

Elemental Iron

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Ultrahigh-speed InGaAs-based HEMT technology

LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels ◽

10.1109/iciprm.1992.235696 ◽

2003 ◽

Cited By ~ 2

Author(s):

M. Abe

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Study of strain effects in high performance double heterostructure In/sub x/Ga/sub 1-x/As (0.57>x>0.73) p-MODFET

LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels ◽

10.1109/iciprm.1992.235674 ◽

2003 ◽

Author(s):

A.M. Kusters ◽

M. Stollenwerk ◽

A. Kohl ◽

M. Heuken ◽

K. Heime

Keyword(s):

High Performance ◽

Strain Effects ◽

Double Heterostructure

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LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels
Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Strain and vertical scaling in the base of Al/sub 0.48/In/sub 0.52/As/In/sub x/Ga/sub 1-x/As heterostructure bipolar transistors

Monolithic integration of InGaAs/InAlAs MODFETs and RTDs on InP-bonded-to Si substrate

1/f noise characteristics of InP/InGaAs heterojunction bipolar transistors

High-gain InAlAs/InGaAs npn single heterojunction bipolar transistors grown by molecular beam epitaxy

Ultrafast optoelectronics

Highly uniform InGaAsP/InP growth in a multiwafer rotating disk reactor by MOCVD

Sinterless contacts to shallow junction InP solar cells

Growth of semi-insulating InP:Fe in a low pressure hydride VPE system using elemental iron and ferrocene as dopant sources

Ultrahigh-speed InGaAs-based HEMT technology

Study of strain effects in high performance double heterostructure In/sub x/Ga/sub 1-x/As (0.57>x>0.73) p-MODFET

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LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart PixelsLatest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Strain and vertical scaling in the base of Al/sub 0.48/In/sub 0.52/As/In/sub x/Ga/sub 1-x/As heterostructure bipolar transistors

Monolithic integration of InGaAs/InAlAs MODFETs and RTDs on InP-bonded-to Si substrate

1/f noise characteristics of InP/InGaAs heterojunction bipolar transistors

High-gain InAlAs/InGaAs npn single heterojunction bipolar transistors grown by molecular beam epitaxy

Ultrafast optoelectronics

Highly uniform InGaAsP/InP growth in a multiwafer rotating disk reactor by MOCVD

Sinterless contacts to shallow junction InP solar cells

Growth of semi-insulating InP:Fe in a low pressure hydride VPE system using elemental iron and ferrocene as dopant sources

Ultrahigh-speed InGaAs-based HEMT technology

Study of strain effects in high performance double heterostructure In/sub x/Ga/sub 1-x/As (0.57>x>0.73) p-MODFET

LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels
Latest Publications