2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs
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GaN based Super HFETs over 700V using the polarization junction concept

2011 ◽  
Author(s):  
Akira Nakajima ◽  
Mahesh H. Dhyani ◽  
E. M. Sankara Narayanan ◽  
Yasunobu Sumida ◽  
Hiroji Kawai

Design of an 80V-class high-side capable double-resurf JI L-IGBT

2011 ◽  
Author(s):  
Hiroki Fujii ◽  
Shinichi Komatsu ◽  
Masaharu Sato ◽  
Toshihiko Ichikawa
Keyword(s):  
High Side

300 V Field-MOS FETs for HV-switching IC

2011 ◽  
Author(s):  
T. Miyoshi ◽  
T. Tominari ◽  
M. Hayashi ◽  
A. Ito ◽  
M. Yoshinaga ◽  
...  

scholarly journals High speed 650V IGBTs for DC-DC conversion up to 200 kHz

2011 ◽  
Author(s):  
Hsueh-Rong Chang ◽  
Jiankang Bu ◽  
George Kong ◽  
Rachana Bou
Keyword(s):  
High Speed

Optimization of diodes using the SPEED concept and CIBH

2011 ◽  
Author(s):  
Manfred Pfaffenlehner ◽  
Hans-Peter Felsl ◽  
Franz-Josef Niedernostheide ◽  
Frank Pfirsch ◽  
Hans-Joachim Schulze ◽  
...  

Over 1.7 kV normally-off GaN hybrid MOS-HFETs with a lower on-resistance on a Si substrate

2011 ◽  
Author(s):  
Nariaki Ikeda ◽  
Ryosuke Tamura ◽  
Takuya Kokawa ◽  
Hiroshi Kambayashi ◽  
Yoshihiro Sato ◽  
...  
Keyword(s):  
Si Substrate
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