7th International Workshop on Computational Electronics. Book of Abstracts. IWCE (Cat. No.00EX427)
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Published By Univ. Galsgow

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3D simulations of ultra-small MOSFETs: the role of the discrete impurities on the device terminal characteristics

7th International Workshop on Computational Electronics. Book of Abstracts. IWCE (Cat. No.00EX427) ◽

10.1109/iwce.2000.869892 ◽

2002 ◽

Cited By ~ 1

Author(s):

W.J. Gross ◽

D. Vasileska ◽

D.K. Ferry

Keyword(s):

3D Simulations

Quantum corrections to the 'atomistic' MOSFET simulation

7th International Workshop on Computational Electronics. Book of Abstracts. IWCE (Cat. No.00EX427) ◽

10.1109/iwce.2000.869895 ◽

2002 ◽

Author(s):

A. Asenov

Keyword(s):

Quantum Corrections

Visualization of large-scale atomic interactions during the melting and crystallization process

7th International Workshop on Computational Electronics. Book of Abstracts. IWCE (Cat. No.00EX427) ◽

10.1109/iwce.2000.869940 ◽

2002 ◽

Author(s):

R. Durikovic

Keyword(s):

Large Scale ◽

Crystallization Process ◽

Atomic Interactions ◽

Melting And Crystallization

Calculation of transport properties for SiO/sub 2/

7th International Workshop on Computational Electronics. Book of Abstracts. IWCE (Cat. No.00EX427) ◽

10.1109/iwce.2000.869947 ◽

2002 ◽

Author(s):

E. Gnani ◽

S. Reggiani ◽

R. Colle ◽

M. Rudan

Keyword(s):

Transport Properties

Simulation of 0.35 μm/0.25 μm CMOS technology doping profiles

7th International Workshop on Computational Electronics. Book of Abstracts. IWCE (Cat. No.00EX427) ◽

10.1109/iwce.2000.869978 ◽

2002 ◽

Author(s):

M. Lorenzini ◽

L. Haspeslagh ◽

J. Van Houdt ◽

H.E. Maes

Keyword(s):

Cmos Technology ◽

Doping Profiles

An ionised-impurity scattering model for 3-D Monte Carlo device simulation with discrete impurity distribution

7th International Workshop on Computational Electronics. Book of Abstracts. IWCE (Cat. No.00EX427) ◽

10.1109/iwce.2000.869964 ◽

2002 ◽

Cited By ~ 1

Author(s):

S. Barraud ◽

P. Dollfus ◽

S. Galdin ◽

R. Rengel ◽

M.J. Martin ◽

...

Keyword(s):

Monte Carlo ◽

Device Simulation ◽

Impurity Scattering ◽

Impurity Distribution ◽

Scattering Model ◽

Monte Carlo Device Simulation

Investigation of the local force approximation in numerical device simulation by full-band Monte Carlo simulation

7th International Workshop on Computational Electronics. Book of Abstracts. IWCE (Cat. No.00EX427) ◽

10.1109/iwce.2000.869942 ◽

2002 ◽

Author(s):

C. Jungemann ◽

B. Neinhus ◽

B. Meinerzhagen

Keyword(s):

Monte Carlo Simulation ◽

Monte Carlo ◽

Device Simulation ◽

Full Band ◽

Numerical Device

Sensitive quantum-dot infrared detector with barrier-limited photoelectron capture

7th International Workshop on Computational Electronics. Book of Abstracts. IWCE (Cat. No.00EX427) ◽

10.1109/iwce.2000.869965 ◽

2002 ◽

Author(s):

V. Mitin ◽

V. Pipa ◽

A. Sergeev ◽

M. Dutta ◽

M. Stroscio

Keyword(s):

Quantum Dot ◽

Infrared Detector

Optimization of FIBMOS through 2-D device simulations

7th International Workshop on Computational Electronics. Book of Abstracts. IWCE (Cat. No.00EX427) ◽

10.1109/iwce.2000.869937 ◽

2002 ◽

Cited By ~ 1

Author(s):

J. Kang ◽

X. He ◽

D. Vasileska ◽

D.K. Schroder

Operation principle of resonant tunneling THz oscillator at fixed bias voltages

7th International Workshop on Computational Electronics. Book of Abstracts. IWCE (Cat. No.00EX427) ◽

10.1109/iwce.2000.869967 ◽

2002 ◽

Author(s):

P. Zhao ◽

H.L. Cui ◽

D. Woolard

Keyword(s):

Resonant Tunneling ◽

Fixed Bias

7th International Workshop on Computational Electronics. Book of Abstracts. IWCE (Cat. No.00EX427)Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By Univ. Galsgow

3D simulations of ultra-small MOSFETs: the role of the discrete impurities on the device terminal characteristics

Quantum corrections to the 'atomistic' MOSFET simulation

Visualization of large-scale atomic interactions during the melting and crystallization process

Calculation of transport properties for SiO/sub 2/

Simulation of 0.35 μm/0.25 μm CMOS technology doping profiles

An ionised-impurity scattering model for 3-D Monte Carlo device simulation with discrete impurity distribution

Investigation of the local force approximation in numerical device simulation by full-band Monte Carlo simulation

Sensitive quantum-dot infrared detector with barrier-limited photoelectron capture

Optimization of FIBMOS through 2-D device simulations

Operation principle of resonant tunneling THz oscillator at fixed bias voltages

7th International Workshop on Computational Electronics. Book of Abstracts. IWCE (Cat. No.00EX427)
Latest Publications