Control of Oxygen Content with Oxygen Gas Introduction in Cr(N,O) Thin Films Prepared by Pulsed Laser Deposition

2012 ◽  
pp. 225-233
Author(s):  
K. Suzuki ◽  
T. Endo ◽  
T. Fukushima ◽  
A. Sato ◽  
T. Suzuki ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Oxygen Content ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Oxygen Gas

Influence of oxygen content on structure and hardness of Cr–N–O thin films prepared by pulsed laser deposition

2006 ◽  
Vol 515 (4) ◽  
pp. 2161-2166 ◽  
Author(s):  
Tsuneo Suzuki ◽  
Jun Inoue ◽  
Hajime Saito ◽  
Makoto Hirai ◽  
Hisayuki Suematsu ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Oxygen Content ◽  
Pulsed Laser ◽  
Laser Deposition

Oxygen content of YBa2Cu3O6+x thin films during growth by pulsed laser deposition

1998 ◽  
Vol 127-129 ◽  
pp. 1011-1016 ◽  
Author(s):  
J. Garcı́a López ◽  
D.H.A. Blank ◽  
H. Rogalla
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Oxygen Content ◽  
Pulsed Laser ◽  
Laser Deposition

Ultraviolet Luminescence Emitted From ZnO Nanostructural Films by KrF Pulsed Laser Deposition

2002 ◽  
Vol 728 ◽  
Author(s):  
Kenji Ebihara ◽  
Tamiko Ohshima ◽  
Tomoaki Ikegami ◽  
Raj K. Thareja
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Gas Pressure ◽  
Laser Deposition ◽  
Zno Thin Films ◽  
Process Conditions ◽  
Ambient Oxygen ◽  
Oxygen Gas

AbstractZinc Oxide (ZnO) thin films have been deposited on silicon (100), quartz glass, sapphire (0001), and glass substrates by pulsed laser deposition over a range of process conditions such as versus ambient oxygen gas pressure and substrate temperature. Photoluminescence measurements have been carried out to characterize ZnO thin films for optical device applications. We have also studied the influence of the process conditions on crystal structure and morphology of the grown films. Ultraviolet luminescence near the band gap at 3.25 eV was obtained from the optical pumped grown films. And ZnO thin films deposited on sapphire single crystal substrates exhibited strong stimulated emission around 3.12 eV with increasing pumping energy. ZnO thin films deposited at ambient oxygen gas pressure of 5 mTorr and a substrate temperature of 550 °C were predominantly c-axis oriented regardless of substrate material. The crystallite size of 22.7-49.8 nm was estimated using Scherrer's formula. AFM images of films grown on sapphire substrates display hexagonally shaped grains at various sizes.

scholarly journals Controlling Oxygen Content by Varying Oxygen Partial Pressure in Chromium Oxynitride Thin Films Prepared by Pulsed Laser Deposition

2013 ◽  
Vol 54 (7) ◽  
pp. 1140-1144 ◽  
Author(s):  
Kazuma Suzuki ◽  
Toshiyuki Endo ◽  
Teruhisa Fukushima ◽  
Aoi Sato ◽  
Tsuneo Suzuki ◽  
...  
Keyword(s):  
Thin Films ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Pulsed Laser Deposition ◽  
Oxygen Content ◽  
Pulsed Laser ◽  
Laser Deposition

Effect of Carbon Addition on Hydrogen Storage Performances of Magnesium-based Alloys: from Bulk Powders to Thin Films

2005 ◽  
Vol 884 ◽  
Author(s):  
A. Rougier ◽  
X. Darok ◽  
V.V. Bhat ◽  
L. Aymard ◽  
G.A. Nazri ◽  
...  
Keyword(s):  
Thin Films ◽  
Hydrogen Storage ◽  
Pulsed Laser Deposition ◽  
Oxygen Content ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Ex Situ ◽  
Gas Mixture ◽  
Carbon Addition

AbstractMg-based thin films were successfully grown by Pulsed Laser Deposition. Dramatic optical changes were observed depending on the conditions of deposition. Films grown in vacuum were shiny metallic whereas the ones grown in a Ar/H2 gas mixture were highly transparent. Ex situ hydrogenation, by annealing the films at 200 °C in 15 bars of hydrogen, led to similar metallictransparent transformation. Mg-Cx (x ≤ 20 %) films show a faster hydrogenation associated with a significant decrease in oxygen content by carbon addition.

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