scholarly journals Atomic‐Scale Control of Electronic Structure and Ferromagnetic Insulating State in Perovskite Oxide Superlattices by Long‐Range Tuning of BO 6 Octahedra

2020 ◽  
Vol 30 (40) ◽  
pp. 2001984 ◽  
Author(s):  
Weiwei Li ◽  
Bonan Zhu ◽  
Ruixue Zhu ◽  
Qiang Wang ◽  
Ping Lu ◽  
...  
2020 ◽  
Vol 12 (11) ◽  
pp. 1035-1041
Author(s):  
Miao Yu ◽  
Chong Chen ◽  
Qi Liu ◽  
Cristina Mattioli ◽  
Hongqian Sang ◽  
...  

2021 ◽  
Vol 27 (S1) ◽  
pp. 356-358
Author(s):  
Sandhya Susarla ◽  
Xiaoxi Huang ◽  
Shehrin Sayed ◽  
Lucas Caretta ◽  
Hongrui Zhang ◽  
...  

1999 ◽  
Vol 5 (S2) ◽  
pp. 120-121
Author(s):  
D. A. Muller ◽  
T. Sorsch ◽  
S. Moccio ◽  
F. H. Baumann ◽  
K. Evans-Lutterodt ◽  
...  

The transistors planned for commercial use ten years from now in many electronic devices will have gate lengths shorter than 130 atoms, gate oxides thinner than 1.2 nm of SiO2 and clock speeds in excess of 10 GHz. It is now technologically possible to produce such transistors with gate oxides only 5 silicon atoms thick[l]. Since at least two of those 5 atoms are not in a local environment similar to either bulk Si or bulk SiO2, the properties of the interface are responsible for a significant fraction of the “bulk” properties of the gate oxide. However the physical (and especially their electrical) properties of the interfacial atoms are very different from .bulk Si or bulk SiO2. Further, roughness on an atomic scale can alter the leakage current by orders of magnitude.In our studies of such devices, we found that thermal oxidation tends to produce Si/SiO2 interfaces with 0.1-0.2 nm rms roughness.


2021 ◽  
pp. 2104495
Author(s):  
Héctor González‐Herrero ◽  
Jesús I. Mendieta‐Moreno ◽  
Shayan Edalatmanesh ◽  
José Santos ◽  
Nazario Martín ◽  
...  

2006 ◽  
Vol 124 (13) ◽  
pp. 131101 ◽  
Author(s):  
G. Mikaelian ◽  
N. Ogawa ◽  
X. W. Tu ◽  
W. Ho

2021 ◽  
Vol 33 (44) ◽  
pp. 2170349
Author(s):  
Héctor González‐Herrero ◽  
Jesús I. Mendieta‐Moreno ◽  
Shayan Edalatmanesh ◽  
José Santos ◽  
Nazario Martín ◽  
...  

Nano Letters ◽  
2019 ◽  
Vol 19 (5) ◽  
pp. 3057-3065 ◽  
Author(s):  
Han Wang ◽  
Xiao Chi ◽  
ZhongRan Liu ◽  
HerngYau Yoong ◽  
LingLing Tao ◽  
...  
Keyword(s):  

2020 ◽  
Vol 44 (4) ◽  
pp. 2594-2603 ◽  
Author(s):  
Shakeel Ahmad Khandy ◽  
Ishtihadah Islam ◽  
Amel Laref ◽  
Mathias Gogolin ◽  
Aurangzeb K. Hafiz ◽  
...  

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