scholarly journals Recent Progress in Proximity Coupling of Magnetism to Topological Insulators (Adv. Mater. 33/2021)

2021 ◽  
Vol 33 (33) ◽  
pp. 2170262
Author(s):  
Semonti Bhattacharyya ◽  
Golrokh Akhgar ◽  
Matthew Gebert ◽  
Julie Karel ◽  
Mark T. Edmonds ◽  
...  

2021 ◽  
pp. 2007795
Author(s):  
Semonti Bhattacharyya ◽  
Golrokh Akhgar ◽  
Matthew Gebert ◽  
Julie Karel ◽  
Mark T. Edmonds ◽  
...  


2018 ◽  
Vol 20 (13) ◽  
pp. 8624-8628 ◽  
Author(s):  
Turgut Yilmaz ◽  
William Hines ◽  
Shoroog Alraddadi ◽  
Joseph I. Budnick ◽  
Boris Sinkovic

Recent progress in impurity-doped topological insulators has shown that the gap at the Dirac point shrinks with reducing temperature.



APL Materials ◽  
2021 ◽  
Vol 9 (6) ◽  
pp. 060702
Author(s):  
Rik Dey ◽  
Anupam Roy ◽  
Leonard F. Register ◽  
Sanjay K. Banerjee


Nanoscale ◽  
2021 ◽  
Author(s):  
Ayesha Khan Tareen ◽  
Karim Khan ◽  
Muhammad Aslam ◽  
Han Zhang ◽  
Xinke Liu

Two dimensional (2D) materials are regarded as promising candidates for future nanoelectronics, especially group-VI elemental 2D materials (Tellurene, and Selenene), due to their outstanding semiconducting/topological insulators properties.



Author(s):  
Teruo Someya ◽  
Jinzo Kobayashi

Recent progress in the electron-mirror microscopy (EMM), e.g., an improvement of its resolving power together with an increase of the magnification makes it useful for investigating the ferroelectric domain physics. English has recently observed the domain texture in the surface layer of BaTiO3. The present authors ) have developed a theory by which one can evaluate small one-dimensional electric fields and/or topographic step heights in the crystal surfaces from their EMM pictures. This theory was applied to a quantitative study of the surface pattern of BaTiO3).



Author(s):  
Dawn A. Bonnell ◽  
Yong Liang

Recent progress in the application of scanning tunneling microscopy (STM) and tunneling spectroscopy (STS) to oxide surfaces has allowed issues of image formation mechanism and spatial resolution limitations to be addressed. As the STM analyses of oxide surfaces continues, it is becoming clear that the geometric and electronic structures of these surfaces are intrinsically complex. Since STM requires conductivity, the oxides in question are transition metal oxides that accommodate aliovalent dopants or nonstoichiometry to produce mobile carriers. To date, considerable effort has been directed toward probing the structures and reactivities of ZnO polar and nonpolar surfaces, TiO2 (110) and (001) surfaces and the SrTiO3 (001) surface, with a view towards integrating these results with the vast amount of previous surface analysis (LEED and photoemission) to build a more complete understanding of these surfaces. However, the spatial localization of the STM/STS provides a level of detail that leads to conclusions somewhat different from those made earlier.





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