scholarly journals Origin of the temperature dependence of the energy gap in Cr-doped Bi2Se3

2018 ◽  
Vol 20 (13) ◽  
pp. 8624-8628 ◽  
Author(s):  
Turgut Yilmaz ◽  
William Hines ◽  
Shoroog Alraddadi ◽  
Joseph I. Budnick ◽  
Boris Sinkovic
Keyword(s):  
Temperature Dependence ◽  
Topological Insulators ◽  
Recent Progress ◽  
Dirac Point ◽  
Energy Gap ◽  
Impurity Doped

Recent progress in impurity-doped topological insulators has shown that the gap at the Dirac point shrinks with reducing temperature.

scholarly journals Discovery of a weak topological insulating state and van Hove singularity in triclinic RhBi2

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Kyungchan Lee ◽  
Gunnar F. Lange ◽  
Lin-Lin Wang ◽  
Brinda Kuthanazhi ◽  
Thaís V. Trevisan ◽  
...  
Keyword(s):  
Time Reversal ◽  
Topological Insulators ◽  
Dirac Point ◽  
Saddle Points ◽  
Surface States ◽  
Van Hove Singularity ◽  
Space Group ◽  
Topological Materials ◽  
Topological Surface ◽  
Optimal Space

AbstractTime reversal symmetric (TRS) invariant topological insulators (TIs) fullfil a paradigmatic role in the field of topological materials, standing at the origin of its development. Apart from TRS protected strong TIs, it was realized early on that more confounding weak topological insulators (WTI) exist. WTIs depend on translational symmetry and exhibit topological surface states only in certain directions making it significantly more difficult to match the experimental success of strong TIs. We here report on the discovery of a WTI state in RhBi2 that belongs to the optimal space group P$$\bar{1}$$ 1 ¯ , which is the only space group where symmetry indicated eigenvalues enumerate all possible invariants due to absence of additional constraining crystalline symmetries. Our ARPES, DFT calculations, and effective model reveal topological surface states with saddle points that are located in the vicinity of a Dirac point resulting in a van Hove singularity (VHS) along the (100) direction close to the Fermi energy (EF). Due to the combination of exotic features, this material offers great potential as a material platform for novel quantum effects.

Temperature dependence of the electron energy gap of highTCsuperconductors studied by work function spectroscopy

1994 ◽  
Vol 64 (13) ◽  
pp. 1726-1728
Author(s):  
S. Westermeyr ◽  
R. Müller ◽  
J. Scholtes ◽  
H. Oechsner
Keyword(s):  
Temperature Dependence ◽  
Work Function ◽  
Electron Energy ◽  
Energy Gap

Temperature Dependence of Optical Energy Gap of Gallium Selenide

2001 ◽  
Vol 8 (3-4) ◽  
pp. 251-259 ◽  
Author(s):  
M. Kepinska ◽  
M. Nowak ◽  
Z. Kovalyuk ◽  
R. Murri
Keyword(s):  
Temperature Dependence ◽  
Energy Gap ◽  
Gallium Selenide ◽  
Optical Energy Gap ◽  
Optical Energy

Determination of Density of Localized States in Amorphous Silicon Alloys From the Low Field Conductance of Thin N-I-N Diodes

1985 ◽  
Vol 49 ◽  
Author(s):  
Michael Shur ◽  
Michael Hack
Keyword(s):  
Temperature Dependence ◽  
Amorphous Silicon ◽  
Bulk Density ◽  
Density Of States ◽  
Energy Gap ◽  
Localized States ◽  
New Technique ◽  
Silicon Alloys ◽  
Low Field ◽  
Density Of Localized States

AbstractWe describe a new technique to determine the bulk density of localized states in the energy gap of amorphous silicon alloys from the temperature dependence of the low field conductance of n-i-n diodes. This new technique allows us to determine the bulk density of states in the centre of a device, and is very straightforward, involving fewer assumptions than other established techniques. Varying the intrinsic layer thickness allows us to measure the,density of states within approximately 400 meV of midgap.We measured the temperature dependence of the low field conductance of an amorphous silicon alloy n-i-n diode with an intrinsic layer thjckness of 0.45 microns and deduced the density of localised states to be 3xlO16cm−3 eV−1 at approximately 0.5 eV below the bottom of the conduction band. We have also considered the high bias region (the space charge limited current regime) and proposed an interpolation formula which describes the current-voltage characteristics of these structures at all biases and agrees well with our computer simulation based on the solution of the complete system of transport equations.

The temperature dependence of the spin - Peierls energy gap in

1996 ◽  
Vol 8 (4) ◽  
pp. L59-L64 ◽  
Author(s):  
J-G Lussier ◽  
S M Coad ◽  
D F McMorrow ◽  
D McK Paul
Keyword(s):  
Temperature Dependence ◽  
Energy Gap

Energy Gap Measurements by Tunneling Between Superconducting Films. I. Temperature Dependence

1964 ◽  
Vol 135 (1A) ◽  
pp. A19-A23 ◽  
Author(s):  
D. H. Douglass ◽  
R. Meservey
Keyword(s):  
Temperature Dependence ◽  
Energy Gap ◽  
Superconducting Films

Temperature Dependence of the Energy Gap of Semiconductors in the Low-Temperature Limit

2004 ◽  
Vol 92 (19) ◽  
Author(s):  
Manuel Cardona ◽  
T. A. Meyer ◽  
M. L. W. Thewalt
Keyword(s):  
Low Temperature ◽  
Temperature Dependence ◽  
Energy Gap ◽  
Temperature Limit

Temperature dependence of the energy gap, refractive index and optical-oscillator parameters of amorphous GaxSe1-x (x = 0.4, 0.5, 0.6) thin films

2009 ◽  
Vol 6 (S1) ◽  
pp. S135-S138 ◽  
Author(s):  
Falah I. Mustafa ◽  
Shikha Gupta ◽  
N. Goyal ◽  
S. K. Tripathi
Keyword(s):  
Thin Films ◽  
Refractive Index ◽  
Temperature Dependence ◽  
Energy Gap
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